• Journal of KIISE
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• v.42 no.8
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• pp.947-953
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• 2015

PRAM is being considered as a potential successor to DRAM because of its characteristics such as byte-addressability, non-volatility, and high density. To gain its benefits, buffer cache replacement algorithm based on PRAM has been actively studied. However, most of the previous studies on buffer cache replacement algorithm limitedly exploit the byte-level performance of PRAM by focusing its limited lifetime and slower access latency compared to DRAM. In this paper, we propose a novel buffer cache replacement algorithm that fully considers the byte-level performance of PRAM and the performance of secondary storage. To take advantage of small size write on PRAM, proposed scheme keeps pages, which are frequently accessed with a small size write, on PRAM and allows the selective page migration from DRAM to PRAM. As a result, our scheme significantly reduces the number of PRAM writes. Our experimental results indicate for real workloads that our scheme reduces the number of PRAM writes by up to 92% and improves its performance by up to 62% compared to CLOCK.

• Journal of KIISE
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• v.42 no.3
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• pp.379-389
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• 2015

With the advent of non-volatile memories such as Phase Change Memory (PCM or PRAM) and Magneto Resistive RAM (MRAM), active studies have been carried out on how to replace Dynamic Random-Access Memory (DRAM) with PRAM. In this paper, we study both endurance and performance issues of existing join algorithms that are based on PRAM-based computer systems and have been widely used until now: Block Nested Loop Join, Sort-Merge Join, Grace Hash Join, and Hybrid Hash Join. Our experimental results show that the existing join algorithms need to be redesigned to improve both the endurance and performance of PRAMs. To the best of our knowledge, this is the first research to scientifically study the results of the four join algorithms running on PRAM-based systems. In this work, our main contribution is the modeling and implementation of a PRAM-based simulator for a comparative study of the existing join algorithms.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.1
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• pp.45-50
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• 2007

This paper proposes a low power selective data write (SDW) scheme for a phase-change random access memory (PRAM). The PRAM consumes large write power because large write currents are required during long time. At first, the SDW scheme reads a stored data during write operation. And then, it writes an input data only when the input and stored data are different. Therefore, it can reduce the write power consumption to a half. The 1K-bit PRAM test chip with $128{\times}8bits$ is implemented with a $0.8{\mu}m$ CMOS technology with a $0.8{\mu}m$ GST cell.

• Proceedings of the KIEE Conference
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• 2008.07a
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• pp.1272-1273
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• 2008

PRAM(Phase change access memory) has desirable characteristics including high speed, low cost, low power, and simple process. PRAM is based on the reversible phase transition between resistive amorphous and conductive crystalline states of chalcogenide. However, PRAM needs high reset current for operation. PRAM have to reduce reset current for high density and competitiveness. Therefore, we have investigated the reset current of PRAM with top electrode contact hole size using 3-D finite element analysis tool in this paper.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.21-40
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• 2006

[ ${\Box}$ ] Opportunities for PRAM Nearly ideal memory characteristics Potential for high density & low cost memory ${\Box}$ Technical Challenges Writing current reduction is the most urgent issue. ${\to}$ chalcogenide, programming volume, current density, heat loss control Improvement of writing speed, reliability ${\Box}$ Prospects (PRAM as a Mainstream Memory) Evenn, We have demonstrated 256Mb PRAM Realization of high density and low cost PRAM with good reliability will be key succss factor. We need to develop PRAM specific applications.

• Bulletin of the Society of Naval Architects of Korea
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• v.26 no.1
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• pp.63-72
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• 1989

The influences of the wideness of pram in designing aftbody of container vessels are investigated. The large transverse KM value of the wide pram aftbody is likely to be regarded as having exellent cargo loading capacity. However the remarkable stability loss under the certain wave conditions, unfavorable situation for structural arrangement and the possibilities of poor vibration and speed-power performances should be considered in case of adopting the wide pram aftbody.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.2
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• pp.137-143
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• 2015

During the past 30 years, DRAM has been used for the reasons of economic efficiency of the production. Recently, PRAM has been emerged to overcome the shortcomings of DRAM. In this paper, we propose a technique that can reduce energy consumption by use of a narrow values to the write operation of PRAM. For this purpose, we describe the data compression method using a narrow value and the architecture of PRAM, We also experiment under the Simplescalar 3.0e simulator and SPEC CPU2000 benchmark environments. According to the experiments, the data hit rate of PRAM was increased by 39.4% to 67.7% and energy consumption was reduced by 9.2%. In order to use the proposed technique, it requires 3.12% of space overhead per word, and some additional hardware modules.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.117-123
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• 2013

In the recent cloud storage environment, the amount of SSD (Solid-State Drive) replacing with the traditional hard disk drive is increasing. Management of SSD for its space efficiency has become important since SSD provides fast IO performance due to no mechanical movement whereas it has wearable characteristics and does not provide in place update. In order to manage space efficiency of SSD, data de-duplication technique is frequently used. However, this technique occurs much overhead because it consists of data chunking, hasing and hash matching operations. In this paper, we propose new data de-duplication method using PRAM cache. The proposed method uses hierarchical hash tables and LRU(Least Recently Used) for data replacement in PRAM. First hash table in DRAM is used to store hash values of data cached in the PRAM and second hash table in PRAM is used to store hash values of data in SSD storage. The method also enhance data reliability against power failure by maintaining backup of first hash table into PRAM. Experimental results show that average writing frequency and operation time of the proposed method are 44.2% and 38.8% less than those of existing data de-depulication method, respectively, when three workloads are used.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.95-100
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• 2007

A low power PRAM using a power-dependant data inversion (PDI) scheme is proposed. The PRAM consumes large write power because large write currents are required during long time. Also, the power consumptions for storing #1# and #0# are different. The PDI circuit compares the power consumptions to store the original data and its inverted data, and then it stores the less power consuming data. Although the PDI scheme needs an additional inversion bit per data, the maximum and average powers of the PDI can be under 50% and 37.5% of the conventional write scheme, respectively. The average power for storing 8bit data is under 41%, due to the inversion bit. The 1K-bit PRAM chip with 128$\times$8bits was implemented with a 0.8${\mu}m$ CMOS technology with a 0.5${\mu}m$ GST cell.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.132-132
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• 2011

For the programming volume of PRAM, Ge2Sb2Te5(GST) thin films have been dominantly used and prepared by physical vapor deposition (PVD), chemical vapor deposition (CVD), atomic layer deposition (ALD). Among these methods, ALD is particularly considered as the most promising technique for the integration of PRAM because the ALD offers a superior conformality to PVD and CVD methods and a digital thickness control precisely to the atomic level since the film is deposited one atomic layer at a time. Meanwhile, although the IST has been already known as an optical data storage material, recently, it is known that the IST benefits multistate switching behavior, meaning that the IST-PRAM can be used for mutli-level coding, which is quite different and unique performance compared with the GST-PRAM. Therefore, it is necessary to investigate a possibility of the IST materials for the application of PRAM. So far there are many attempts to deposit the IST with MOCVD and PVD. However, it has not been reported that the IST can be deposited with the ALD method since the ALD reaction mechanism of metal organic precursors and the deposition parameters related with the ALD window are rarely known. Therefore, the main aim of this work is to demonstrate the ALD process for IST films with various precursors and the conformal filling of a nano size programming volume structure with the ALD?IST film for the integration. InSbTe (IST) thin films were deposited by ALD method with different precursors and deposition parameters and demonstrated conformal filling of the nano size programmable volume of cell structure for the integration of phase change random access memory (PRAM). The deposition rate and incubation time are 1.98 A/cycle and 25 cycle, respectively. The complete filling of nano size volume will be useful to fabricate the bottom contact type PRAM.