• Korean Journal of Metals and Materials
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• v.50 no.2
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• pp.146-151
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• 2012

The present article shows how the fracture strength of single crystal silicon chips, which are generally used as semiconductor devices, is influenced by loading rate variation during a 3-point bending test. It was found that the fracture strength of the silicon chips slightly increases up to 4% with increasing loading rate for loading rates lower than 20 mm/min. Meanwhile, the fracture strength of the chips hardly increases with increase of loading rate to levels higher than 40 mm/min. However, there was an abrupt transition in the fracture strength within a loading rate range of 20 mm/min to 40 mm/min. This work explains through microscopic examination of the fracture surface of all test chips that such a big transition is related to the deflection of crack propagation direction from the (011) [${\bar{1}}00$] system to the (111) [${\bar{2}}11$] system in a particular loading rate (i.e. from 20 mm/min to 40 mm/min).

• Polymer(Korea)
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• v.39 no.1
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• pp.185-190
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• 2015

Since a transition from liquid crystal to crystal state is slow for the large photo-reactive liquid crystal molecules, it needs a long time for recrystallization of LC242 molecules when lowering the temperature of the liquid crystal. Although liquid crystals usually align along one direction, the directions of individual liquid crystal molecules are little different from one another with increasing temperature, resulting in changes of birefringence of the liquid crystal films. When the photo-reactive liquid crystals are photo-cured, faster curing kinetics and much larger curing degrees are observed for the films cured at the liquid crystal phase.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.111-115
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• 1997

Iron-doped LiNbO$_3$ crystals were grown by floating zone(FZ) method with different [Li]/[Nb] ratio in order to investigate doping effects of transition metal impurity in LiNbO$_3$ crystal. The grown crystals were analyized edge in UV/VIS/IR spectrometry and EPMA(electron probe micro-analysis). The absorption edge in UV-VIS region and OH-absorption peak in IR region were investigated. The change of Fe concentration along the solidification direction was also investigated

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.105-109
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• 1997

요소결정성장에 용매와 불순물이 주는 영향을 Monte Carlo법과 분자동역학법을 통해 분석하였으며 이를 통해 불순물인 Biuret이 결정의 Morphology에 대한 영향뿐만 아니라 내부격자에 용매인 물을 흡착시킨다는 것을 확인하였다. 또한 계면의 용매, 용질 그리고 격자층의 확산계수를 분석한 결과 용매인 물이 "Roughening Transition" 메커니즘으로 결정성장에 영향을 준다는 것을 밝혔다.다는 것을 밝혔다.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.163-166
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• 2006

We found dramatic changes of the properties of LCs by dispersing ferroelectric nanoparticles. Specifically, ferroparticles greatly increase the nematic-isotropic transition temperature, birefringence and dielectric anisotropy of the LC. Ferroelectric nanoparticles/LCs colloids offer a simple and effective means to precisely control the physical properties of LC materials and optimize them for display applications.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.940-941
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• 2009

The adsorption strength of liquid crystal molecules on the polymer surface was compared measuring temperature dependence of retardation above Nematic-Isotoropic transition temperature ($T_{NI}$). The relationship between surface order parameter and adsorption strength on the polymer surface was discussed.

• Journal of the Korean Ceramic Society
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• v.43 no.7 s.290
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• pp.389-392
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• 2006

Electric field-induced phase transition from the tetragonal to rhombohedral phase was investigated for the <111> direction in tetragonal PZN-PT single crystals, which have spontaneous polarization along the <001> direction. From the strain and dielectric data, it was confirmed that the samples followed a tetragonal-orthorhombic-rhombohedral phase transition sequence with application of an electric field. This transition is different from the rhombohedral-tetragonal phase transition of <001> rhombohedral composition single crystals, in which a phase transition occurred without showing the intermediate orthorhombic phase.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.398-407
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• 1992

Cholesteryl S-alkoxybenzene thiocarbonates was synthesized and their liquid crystal transition temperature were determined. Those compounds exhibit enantiotropic cholesteric mesophases. The cholestric-isotropic transition temperatures decrease gradually with increasing alkoxy chain length and mesophase transition were investigated by differential scanning calorimetry.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.5-16
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• 1991

It was grown Cubic $ZrO_2(10 mol% Y_2O_3)$ single crystals doped with 1 wt% rare earth metal oxides (RE=Ce, Pr, Nd, Eu, Er) by Skull method. It was investigated electrical properties on (111) plane of grown single crystals by Impedance Spectroscopy. It was potted relation between temperature and electrical conductivities and observed the transition at $약300-400^{\circ}$ It was obtained activation energy on the migration of oxygen vacancy between low temperature (before the transition) and high temperature (after the transition till ${\11}500^{\circ}$) and its difference can be seen the activation energy of the formation of oxygen vacancies by break up defect complexes. It was obtained the activation energy according as add yttria and rare earth metal oxides and discussed ionic conduction mechanism. Grown single crystals showed Ce: orange - red, Pr: golden - yellow, Nd: lilac, Eu: light pink, Er: pink due to dopant effect from the light absorption data in the visible range.

• Progress in Superconductivity
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• v.10 no.2
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• pp.87-91
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• 2009

Fluorine-doped $SmFeAsO_{1-x}F_x$ single crystals with the nominal value of x=0.2 were grown at $1350-1450^{\circ}C$ under the pressure of 3.3 GPa by using the self-flux method. Plate-shaped single crystals in the range of a few-150 ${\mu}m$ in their lateral size were obtained. The detailed crystal structure was analyzed by using the x-ray diffractometry. Superconducting transition temperature, determined by the resistive transition, of a single crystal was about 49 K with a narrow resistive transition width of ${\sim}1$ K. A relatively sharp transition, a low residual resistivity, and a large residual resistivity ratio compared with those reported for $REFeAsO_{1-x}F_x$(RE=Sm, Nd) single crystals indicate the high quality of our single crystals.