• Applied Microscopy
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• 제52권
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• pp.2.1-2.6
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• 2022

With the lightening of the mobile devices, thinning of electrolytic copper foil, which is mainly used as an anode collection of lithium secondary batteries, is needed. As the copper foil becomes ultrathin, mechanical properties such as deterioration of elongation rate and tear phenomenon are occurring, which is closely related to microstructure. However, there is a problem that it is not easy to prepare and observe specimens in the analysis of the microstructure of ultrathin copper foil. In this study, electron backscatter diffraction (EBSD) specimens were fabricated using only mechanical polishing to analyze the microstructure of 8 ㎛ thick electrolytic copper foil in plane view. In addition, EBSD maps and transmission electron microscopy (TEM) images were compared and analyzed to find the optimal cleanup technique for properly correcting errors in EBSD maps.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.38-41
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• 2004

The oxidizer plays an important role in the metal chemical mechanical polishing(CMP) slurry. Currently, the oxidizer used in CMP slurry is nearly divided into several kinds such as $Fe(NO_3)_3$, $H_2O_2$, $KIO_3$, and $H_5IO_6$. It is generally known that oxidizer character of $H_2O_2$ is more effective than other oxidizers. In this work, we have been studied the characteristics for the $H_2O_2$ concentration of copper slurry, which can applicable in the recent semiconductor manufacturing process. Also, it plays an important role in the planarization of copper films using copper slurries during micro-electronic device fabrication. In this work, we confirmed that removal rate of Cu/TaN changed by $H_2O_2$ concentration on copper slurry. And we used $KMnO_4$ in the measurement method of $H_2O_2$. In analysis results, we confirmed that the difference of results is large. We thought that the difference was due to organic component existence. So in titration method of $H_2O_2$ concentration, we used $Na_2S_2O_3$ instead of $KMnO_4$ as solution. Consequently, using the titration method, we could calculate correct data reduced error. And $H_2O_2$ concentration has been adjusted to the target concentration of 0.1 wt%.

• 한국기계가공학회지
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• 제14권6호
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• pp.41-48
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• 2015

Stainless steel mesh has been used as a filter in various fields, including domestic, medical, etc. However, the surface before machining may have an adverse effect the product quality and performance because it is not smooth. Especially, adsorbed impurities in the surface result in difficulty in cleaning. Therefore, in this paper, we propose an improved surface quality through electrochemical polishing (ECP). Two electrodes, composed of STS304 (anode) and copper (cathode) underwent machining with two conditions according to polishing time and current density. As the polishing time and current density increase, the surface of curvature decreases, and roughness and material removal rate (MRR) improves. The machined surface roughness and image were obtained through the atomic force microscope (AFM) and stereoscopic microscope. The study also analyzed hydrophilic effect through contact angles. This obtains corrosion resistance, smoothness, hydrophilic property, etc.

• 한국표면공학회지
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• 제57권3호
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• pp.140-154
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• 2024

As the trend towards miniaturization in semiconductor integration process, the limitations of interconnection metals such as copper, tungsten have become apparent, prompting research into the emergence of new materials like cobalt and emphasizing the importance of studying the corresponding process conditions. During the chemical mechanical polishing (CMP) process, corrosion inhibitors are added to the slurry, forming passivation layers on the cobalt surface, thereby playing a crucial role in controlling the dissolution rate of the metal surface, enhancing both removal rate and selectivity. This review investigates the understanding of the cobalt polishing process and examines the characteristics and behavior of corrosion inhibitors, a type of slurry additive, on the cobalt surface. Among the corrosion inhibitors examined, benzotriazole (BTA), 1,2,4-triazole (TAZ), and potassium oleate (PO) all improved surface characteristics through their interaction with cobalt. These findings provide important guidelines for selecting corrosion inhibitors to optimize CMP processes for cobalt-based semiconductor materials. Future research should explore combinations of various corrosion inhibitors and the development of new compounds to further enhance the efficiency of semiconductor processes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.486-486
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• 2009

In this paper, the current-voltage (I-V) curves, such as linear sweep voltammetry (LSV) and cyclic voltammetry (CV), were employed to evaluate the effect of electrolyte concentration on the electrochemical reaction trend. From the I-V curve, the electrochemical states of active, passive, transient and trans-passive could be characterized. And then, we investigated that how this chemical affect the process of voltage-induced material removal in electrochemical mechanical polishing (ECMP) of Copper. The scanning electron microscopy (SEM) and energy dispersive spectroscopy EDS) analyses were used to observe the surface profile. Finally, we monitored the oxidation and reduction process of the Cu surface by the repetition of anodic and cathodic potential from cyclic voltammetry (CV) method in acid- and alkali-based electrolyte. From these analyses, it was important to understand the electrochemical mechanisms of the ECMP technology.

• 한국전기전자재료학회논문지
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• 제18권1호
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• pp.24-29
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• 2005

Chemical mechanical polishing (CMP) has been widely accepted for the global planarization of multi-layer structures in semiconductor manufacturing. Copper has been the candidate metallization material for ultra-large scale integrated circuits (ULSIs), owing to its excellent electro-migration resistance and low electrical resistance. However, it still has various problems in copper CMP process. Thus, it is important to understand the effect of the process variables such as turntable speed, head speed, down force and back pressure are very important parameters that must be carefully formulated in order to achieve desired the removal rates and non-uniformity. Using a design of experiment (DOE) approach, this study was performed investigating the main effect of the variables and the interaction between the various parameters during CMP. A better understanding of the interaction behavior between the various parameters and the effect on removal rate, non-uniformity and ETC (edge to center) is achieved by using the statistical analysis techniques. In the experimental tests, the optimum parameters which were derived from the statistical analysis could be found for higher removal rate and lower non-uniformity through the above DOE results.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.565-566
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• 2006

Slurry used in metal chemical mechanical polishing normally consists of an oxidizer, a complexing agent, a corrosion inhibitor and an abrasive. This paper investigates effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$ as an oxidizer. In order to study chemical effects of a citric acid, x-ray photoelectron spectroscopy were performed on Cu sample after Cu etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but Cu/$Cu_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu Surface decrease. According to decrease of wear resistance on Cu surface, removal rate increases from $285\;{\AA}/min$ to $8645\;{\AA}/min$ in Cu CMP.

• 한국표면공학회지
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• 제32권3호
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• pp.410-415
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• 1999

The adhesion strength of sputtered copper films to Inconel substrates has been studied using the scratch test. The effects of substrate treatments before deposition such as chemical or ion bombardment etching were investigated by means of a mean critical load derived from a Weibull-like statistical analysis. It was found that the mean critical load was very weak unless the amorphous layer produced by mechanical polishing on the substrate surface was eliminated. Chemical etching in a nitric-hydrochloric acid bath was shown to have practically no effect on the enhancement of the adhesion. In contrast, the addition in this bath of nickel and copper sulphates allowed removal of the amorphous layer and an increase in the values of the mean critical load. However, it was observed that excessive chemical etching could cancel out the mean critical load enhancement. The results obtained in the case of ion bombardment etching pretreatments could be far higher than those obtained with chemical etching. Moreover, for a sufficiently long period of ion bombardment etching, the adhesion strength was so high that it was impossible to observe evidence of an adhesion failure.

• 반도체디스플레이기술학회지
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• 제12권1호
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• pp.61-65
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• 2013

We investigated the wearable dynamics of diamond spherical abrasive during the substrate surface polishing under the pad compression via classical molecular dynamics modeling. We performed three-dimensional molecular dynamics simulations using the Morse potential functions for the copper substrate and the Tersoff potential function for the diamond abrasive. The pad hardness had a big impact on the wearable dynamics of the abrasive. The moving speed of the abrasive decreased with increasing hardness of the pad. As the hardness decreased, the abrasive was indented into the pad and then the sliding motion of the abrasive was increased. So the pad hardness was greatly influenced on the slide-to-roll ratio as well as the wearable rate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.116-116
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• 2008

Cu CMP 공정시 높은 압력으로 인하여 low-k 유전체막에 손실을 주며, 디싱과 에로젼 같은 문제점을 해결하기 위하여 기존의 CMP에 전기화학을 결합시킴으로서 낮은 하력에서의 Cu 평탄화를 달성 할 수 있는 ECMP(Electrochemical Mechanical Polishing)기술이 필요하게 되었다. 본 논문에서는 $NaNO_3$ 전해액이 Cu 표면에 미치는 영향을 SEM (Scanning electron microscopy), EDS (Energy Dispersive Spectroscopy), XRD(X-ray Diffraction)를 통하여 전기화학적 특성을 비교 분석하였다.