• 제목/요약/키워드: Copper growth

검색결과 470건 처리시간 0.042초

초음파 분무 열분해법을 이용한 구리산화물 박막 성장 (Growth of Copper Oxide Thin Films Deposited by Ultrasonic-Assisted Spray Pyrolysis Deposition Method)

  • 한인섭;박일규
    • 한국재료학회지
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    • 제28권9호
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    • pp.516-521
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    • 2018
  • Copper oxide thin films are deposited using an ultrasonic-assisted spray pyrolysis deposition (SPD) system. To investigate the effect of substrate temperature and incorporation of a chelating agent on the growth of copper oxide thin films, the structural and optical properites of the copper oxide thin films are analyzed by X-ray diffraction (XRD), field-emssion scanning electron microscopy (FE-SEM), and UV-Vis spectrophotometry. At a temperature of less than $350^{\circ}C$, three-dimensional structures consisting of cube-shaped $Cu_2O$ are formed, while spherical small particles of the CuO phase are formed at a temperature higher than $400^{\circ}C$ due to a Volmer-Weber growth mode on the silicon substrate. As a chelating agent was added to the source solutions, two-dimensional $Cu_2O$ thin films are preferentially deposited at a temperature less than $300^{\circ}C$, and the CuO thin film is formed even at a temperature less than $350^{\circ}C$. Therefore the structure and crystalline phase of the copper oxide is shown to be controllable.

Growth of Graphene on Electro-polished Copper Foil by Thermal CVD

  • Jin, Xiaozhan;Kim, Sung-Jin;Seo, Eun-Kyoung;Boo, Doo-Wan;Lee, Jung-Ah;Hwang, Chan-Yong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.410-410
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    • 2012
  • The continuous monolayer graphene was synthesized on electro-polished copper foil. Electro-polishing sticks off the coating layer of copper foil, which prevents the continuous graphene growth. The quality of continuous graphene is dependent on roughness of copper foil. Copper foil roughness could be controlled by changing polishing condition. The effects of working voltage (4-6 V) and time (30-70 sec) for electro-polishing were systematically examined. The change of surface roughness was checked with AFM.

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전해구리막의 표면 조건과 어닐링 과정을 통한 그래핀 성장 최적화 (Optimizing Graphene Growth on the Electrolytic Copper Foils by Controlling Surface Condition and Annealing Procedure)

  • 이우진;고하은;구태림;이재성;이준우;홍순기;김상호
    • 한국표면공학회지
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    • 제56권3호
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    • pp.192-200
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    • 2023
  • Graphene, a two-dimensional material, has shown great potential in a variety of applications including microelectronics, optoelectronics, and graphene-based batteries due to its excellent electronic conductivity. However, the production of large-area, high-quality graphene remains a challenge. In this study, we investigated graphene growth on electrolytic copper foil using thermochemical vapor deposition (TCVD) to achieve a similar level of quality to the cold-rolled copper substrate at a lower cost. The combined effects of pre-annealing time, graphenized temperature, and partial pressure of hydrogen on graphene coverage and domain size were analyzed and correlated with the roughness and crystallographic texture of the copper substrate. Our results show that controlling the crystallographic texture of copper substrates through annealing is an effective way to improve graphene growth properties, which will potentially lead to more efficient and cost-effective graphene production. At a hydrogen partial pressure that is disadvantageous in graphene growth, electrolytic copper had an average size of 8.039 ㎛2, whereas rolled copper had a size of 19.092 ㎛2, which was a large difference of 42.1% compared to rolled copper. However, at the proper hydrogen partial pressure, electrolytic copper had an average size of 30.279 ㎛2 and rolled copper had a size of 32.378 ㎛2, showing a much smaller difference of 93.5% than before. This observation suggests this potentially leads the way for more efficient and cost-effective graphene production.

Controlled Growth of Large-Area Mono-, Bi-, and Few-Layer Graphene by Chemical Vapor Deposition on Polycrystalline Copper Surfaces

  • Kim, Yooseok;Song, Wooseok;Lee, Suil;Cha, Myoung-Jun;Park, Chong-Yun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.614-614
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    • 2013
  • The effect of graphene growth parameters on the number of graphene layers were systematically studied and growth mechanism on copper substrate was proposed. Parameters that could affect the thickness of graphene growth include the pressure in the system, gas flow rate, growth pressure, growth temperature, and cooling rate. We hypothesis that the partial pressure of both the carbon sources and hydrogen gas in the growth process, which is set by the total pressure and the mole fraction of the feedstock, could be the factor that controls the thickness of the graphene. A synthetic method to produce such large area graphene films with precise thickness from mono- to few-layer would be ideal for chemists and physicists to explore the promising electronic applications of these materials. Here, large-area uniform mono-, bi-, and few-layer graphene films were successfully synthesized on copper surface in selective growth windows, with a finely tuned total pressure and $CH_4$/$H_{2gas}$ ratio. Our findings may facilitate both the large-area synthesis of well-controlled graphene features and wide range of applications of graphene.

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큰 결정 크기를 가지는 단일층 그래핀 성장을 위한 구리 호일의 전해연마 공정 최적화 (Optimized Electroplishing Process of Copper Foil Surface for Growth of Single Layer Graphene with Large Grain Size)

  • 김재억;박홍식
    • 센서학회지
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    • 제26권2호
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    • pp.122-127
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    • 2017
  • Graphene grown on copper-foil substrates by chemical vapor deposition (CVD) has been attracting interest for sensor applications due to an extraordinary high surface-to-volume ratio and capability of large-scale device fabrication. However, CVD graphene has a polycrystalline structure and a high density of grain boundaries degrading its electrical properties. Recently, processes such as electropolishing for flattening copper substrate has been applied before growth in order to increase the grain size of graphene. In this study, we systemically analyzed the effects of the process condition of electropolishing copper foil on the quality of CVD graphene. We observed that electropolishing process can reduce surface roughness of copper foil, increase the grain size of CVD graphene, and minimize the density of double-layered graphene regions. However, excessive process time can rather increase the copper foil surface roughness and degrade the quality of CVD graphene layers. This work shows that an optimized electropolishing process on copper substrates is critical to obtain high-quality and uniformity CVD graphene which is essential for practical sensor applications.

포름산 혼합 나노섬유 성장 구리마이크로입자를 이용한 구리 소결 페이스트 합성 (Synthesis of Cu Sintering Paste Using Growth of Nanofiber on Cu Microparticles Mixed with Formic Acid)

  • 전영운;장지웅
    • 공업화학
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    • 제35권2호
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    • pp.96-99
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    • 2024
  • 구리 마이크로입자의 표면을 나노섬유형태의 포름산구리로 합성하고 포름산과 혼합하여 구리판을 접합할 수 있는 소결 페이스트를 합성하였다. 평균 10 ㎛의 구리 마이크로입자는 400 ℃ 이상에서 표면이 산화구리 나노섬유로 합성되고 포름산과 혼합하여 표면이 포름산화된 구리 마이크로입자가 합성된다. 포름산구리는 구리 벌크입자나 나노입자의 녹는점에 비해 낮은 온도인 210 ℃에서 구리로 분해되어 저온 소결로 구리판의 접합이 가능하다. 표면을 나노섬유 형태로 제어하여 표면적을 높여 포름산구리로의 반응속도, 응집에 필요한 접촉면적, 포름산구리의 분해속도 등이 증가하여 짧은 시간에 소결할 수 있도록 하였다.

동 제련 슬래그를 사용한 시멘트 모르타르의 강도 및 황산저항 특성 (Strength and sulfuric acid resistance properties of cement mortar containing copper slag)

  • 홍창우;이정일;류정호
    • 한국결정성장학회지
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    • 제26권3호
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    • pp.101-108
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    • 2016
  • 동 제련 과정에서 발생되는 동 슬래그는 국내에서 년간 70만톤 이상이 발생되고 있어 산업부산물의 건설소재로서의 재활용에 대한 관심이 증가되고 있다. 이에 본 연구에서는 동 제련 슬래그의 3가지 유형의 입도형상과 잔골재로 사용된 강사의 대체 치환율 변화를 실험변수로 선정하여, 동 슬래그를 사용한 시멘트 모르타르의 강도 및 공극구조 특성, 황산 침지 저항성 등의 실험을 통해 건설용 골재로서의 사용가능성을 평가하고자 하였다. 실험결과 동 제련 슬래그 입도는 강도에 미치는 영향인자로 확인되었으며 동 제련 슬래그 잔골재 치환율 60 %인 경우가 가장 높은 강도를 보였다. 또한 잔골재를 동 제련 슬래그로 치환함으로 인해 기공크기가 감소되는 것으로 나타났으며, 황산에 대한 저항성도 증가되는 것으로 나타났다.

벼 종자배양에서 Copper가 캘러스 형성 및 식물체 재분화에 미치는 영향 (Effect of Copper on Callus Formation and Plant Regeneration in Seed Culture of Rice)

  • 권용삼;손재근
    • 식물조직배양학회지
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    • 제28권4호
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    • pp.205-208
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    • 2001
  • 벼의 종자배양에서 식물체 재분화 능력을 향상시키기 위하여 2 mg/L의 2,4-D와 여러 가지 농도의 copper (0~5.0mg/L)가 첨가된 MS배지에 종자배양 한 바 캘러스 생장정도는 copper 농도에 따라 다르게 나타났는데 특히, 2.5 mg/L의 copper가 첨가된 배지에서 가장 양호하였다. 그리고 캘러스 형성률과 copper 농도 간에는 유의성 있는 차이가 인정되지 않았다. 식물체 재분화 배지에 2.5 mg/L의 copper의 첨가는 Indica 품종들의 식물체 재분화 효율을 크게 향상시켰다. Copper가 첨가되지 않은 N$_{6}$배지에서 Indica 6품종의 평균재분화율은 2.4%이었으나, copper가 첨가된 배지에서 27.4%로 높게 나타났다.

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Evolutional Transformations of Copper Nanoparticles to Copper Oxide Nanowires

  • 강민규;윤호규;김영석
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.18.2-18.2
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    • 2011
  • We study and analyze here a novel and simple approach to produce copper oxide nanowires in a methanol as an alternative to chemical synthesis routs and VLS-growth method. First, copper oxide nanowires are grown from copper nanoparticles in methanol at $60^{\circ}C$. Nanoparticles are synthesized via inert gas condensation, one of the dry processes. Synthesized nanowires were confirmed via XRD, FESEM and TEM. As a result, all particles have grown to Cu2O nanowires (20~30 nm in diameter, 5~10 um in length; aspect ratio >160~500). Next, these synthesized oxide nanowires are reduced copper nanowires in the furnace under hydrogen flow at $200{\sim}450^{\circ}C$. The evolution of oxide nanowires and their transformation to copper nanowires is studied as a function of time.

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Growth Inhibition and Apoptosis Induction of Gastric Cancer Cells by Copper (II) Glycinate Complex

  • JE CHUL LEE;JEONG, YONG WOOK;KISUNG KIM;JAE YOUNG OH;JONG CHUN PARK;JUNG HWAN BANG;ANG WON CHOI
    • Journal of Microbiology and Biotechnology
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    • 제13권3호
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    • pp.394-399
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    • 2003
  • The in vitro cytotoxic effects of newly synthesized copper (II) glycinate complex were investigated in two gastric cancer cell lines of SNU484 and SNU638 cells. The complex inhibited the growth and decreased the viability of both gastric cancer cells in a dose-dependent manner. Gastric cancer tells treated with the complex exhibited the features of apoptosis, as demonstrated by fragmentation of chromosomal DNA, activation of caspase-3-like enzyme, and cleavage of poly[ADP-ribose] polymerase (PARP). With the treatment of copper (II) glycinate complex, the active form of caspase-3 was observed in SNU484 cells, but not in SNU638 cells, indicating that an alternative pathway of apoptosis might have been triggered in SNU638 cells. In conclusion, copper (II) glycinate complex induces apoptosis of SNU484 and SNU638 gastric cancer cells, and it is suggested that novel copper (II) glycinate complex is highly active against human gastric cancer cells.