• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.289.1-289.1
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• 2016

Germanium (Ge) with higher carrier mobility and a lower crystallization temperature has been considered as the channel material of thin-film transistors for display applications. Various methods were studied for crystallizaion of poly-Ge from amorphous Ge at low temperature. Especially Metal induced crystalliazation (MIC) process was widely studied because low process cost. In this paper, we investigate copper diffusion process of different thick (70 nm, 350 nm) poly-Ge film obtained by MIC process at various temperatures (250, 300, and $350^{\circ}C$) through atomic force microscopy (AFM), Raman spectroscopy, and secondary ion mass spectroscopy (SIMS) measurement. Crystallization completeness and grain size was similar in all the conditions. Copper diffusion profile of 370 nm poly-Ge film show simirly results regardless of process temperature. However, copper diffusion profile of 70 nm poly-Ge film show different results by process temperature.

• 한국초전도ㆍ저온공학회논문지
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• 제24권4호
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• pp.16-24
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• 2022

Applications of REBa₂Cu₃O_7-δ tapes require joints with a simple manufacturing process, low resistance and good mechanical properties. In the present study, we successfully developed a copper diffusion joint between Cu-stabilized REBa₂Cu₃O_7-δ tapes that meets the above requirements without solder simply by applying flux, heat and pressurization. After a 3 min thermocompression process at approximately 150 δ and 336 MPa in air, two tapes were directly connected between Cu stabilizers by copper diffusion, which was proven by microstructure analysis. The specific resistivity of the copper diffusion joint reached 5.8 nΩ·cm² (resistance of 0.4 nΩ for a 306 mm splicing length) at 77 K in the self-field. The axial tensile stress reached 200 N without critical current degradation. The results show promise for the preparation of copper diffusion joints to be used in coils, attached tapes, and wire/cable terminals.

• Restorative Dentistry and Endodontics
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• 제12권1호
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• pp.39-49
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• 1986

The purpose of this study was to observe characteristic properties through the polarization curves and SEM images from 4 different types of amalgam obtained by using the potentiostats (Princeton EG & G) & SEM (Jeol/35), and to investigate the degree of corrosion on the oxidation peak of the each phase of amalgam. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by means of the mechanical amalgamator (Shofu Co.), the triturated mass was inserted into the cylindrical metal mold which was 12mm in diameter and 10.0mm in height and was condensed by using routine manner. The specimen was removed from the mold and stored at room temperature for about 24 hours. The standard surface preparation was routinely carried out. Anodic polarization measurement was employed to confirm the corrosion behaviour of the amalgams in a 0.9% saline solution (P.H: 6.8-7.0) at $37^{\circ}C$. The initial rest potential (corrosion potential) was determined after 30 minutes of immersion of specimen in electrolyte, and the potential scan was begun at the point of 100mV cathodic from the corrosion potential. The scan rate was 0.17mV/sec. in the study to observe the degree of corrosion of each phase. SEI and EPMA images on the determined oxidation peaks of each amalgam were observed. The results were as follows: 1. In the four anodic polarization curves, low copper amalgams have three oxidation peaks and high copper amalgams have two oxidation peaks, -270mV, +26mV and +179mV(SEC) in the low copper lathe cut, and -300mV, +39mV and +163mV(SEC) in the low copper spherical. -4mV and +154mV(SEC) in the Dispersalloy, and +17mV and +180mV(SEC) in the Tytin as high copper amalgams. 2. ${\gamma}_2$ phase in the low copper amalgam and ${\eta}$ phase in the high copper amalgam were the most corrodible phases and Ag-Cu eutectic in high copper amalgam was the most slowly corroded phase. 3. Low copper amalgam was more susceptible in corrosion than high copper amalgam.

• 한국분말재료학회지
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• 제19권5호
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• pp.343-347
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• 2012

In this study, an oxygen plasma treatment was used as a low temperature debinding method to form a conductive copper feature on a flexible substrate using a direct printing process. To demonstrate this concept, conductive copper patterns were formed on polyimide films using a copper nanoparticle-based paste with polymeric binders and dispersing agents and a screen printing method. Thermal and oxygen plasma treatments were utilized to remove the polymeric vehicle before a sintering of copper nanoparticles. The effect of the debinding methods on the phase, microstructure and electrical conductivity of the screen-printed patterns was systematically investigated by FE-SEM, TGA, XRD and four-point probe analysis. The patterns formed using oxygen plasma debinding showed the well-developed microstructure and the superior electrical conductivity compared with those of using thermal debinding.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.82-82
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• 2007

The chemical mechanical polishing (CMP) process has been widely used to obtain global planarization of multilevel interconnection process for ultra large scale. integrated circuit applications. Especially, the application of copper CMP has become an integral part of several semiconductor device and materials manufacturers. However, the low-k materials at 65nm and below device structures because of fragile property, requires low down-pressure mechanical polishing for maintaining the structural integrity of under layer during their fabrication. In this paper, we studied electrochemical mechanical polishing (ECMP) as a new planarization technology that uses electrolyte chemistry instead of abrasive slurry for copper CMP process. The current-voltage (I-V) curves were employed we investigated that how this chemical affect the process of voltage induced material removal in ECMP of Copper. This work was supported by grant No. (R01-2006-000-11275-0) from the Basic Research Program of the Korea Science.

• 한국환경과학회지
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• 제19권9호
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• pp.1119-1127
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• 2010

The behavior of copper throughout the whole process of wastewater treatment plant that uses the activated sludge process to treat the wastewater of petrochemical industry that contains low concentration of copper was investigated. Total inflow rate of wastewater that flows into the aeration tank was $697\;m^3$/day with 0.369 mg/L of copper concentration, that is, total copper influx was 257.2 g/day. The ranges of copper concentrations of the influent to the aeration tank and effluent from the one were 0.315 ~ 0.398 mg/L and 0.159 ~ 0.192 mg/L, respectively. The average removal rate of copper in the aeration tank was 50.8 %. The bioconcentration factor (BCF) of copper by microbes in the aeration tank was 3,320. The accumulated removal rate of copper throughout the activated sludge process was 71.3%, showing a high removal ratio by physical and chemical reactions in addition to biosorption by microbes. The concentration of copper in the solid dehydrated by filter press ranged from 74.8 mg/kg to 77.2 mg/kg and the concentration of copper by elution test of waste was 2.690 ~ 2.920 mg/L. It was judged that the copper concentration in dehydrated solid by bioconcentration could be managed with the control of that in the influent.

• 마이크로전자및패키징학회지
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• 제27권1호
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• pp.17-24
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• 2020

As an interconnect scaling faces a technical bottleneck, the device stacking technologies have been developed for miniaturization, low cost and high performance. To manufacture a stacked device structure, a vertical interconnect becomes a key process to enable signal and power integrities. Most bonding materials used in stacked structures are currently solder or Cu pillar with Sn cap, but copper is emerging as the most important bonding material due to fine-pitch patternability and high electrical performance. Copper bonding has advantages such as CMOS compatible process, high electrical and thermal conductivities, and excellent mechanical integrity, but it has major disadvantages of high bonding temperature, quick oxidation, and planarization requirement. There are many copper bonding processes such as dielectric bonding, copper direct bonding, copper-oxide hybrid bonding, copper-polymer hybrid bonding, etc.. As copper bonding evolves, copper-oxide hybrid bonding is considered as the most promising bonding process for vertically stacked device structure. This paper reviews current research trends of copper bonding focusing on the key process of Cu-SiO₂ hybrid bonding.

• 한국추진공학회지
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• 제21권6호
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• pp.73-82
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• 2017

재사용 발사체용으로 개발되는 엔진은 반복 사용 조건에 따른 저사이클 열피로 문제를 고려해야 한다. 본 연구는 연소기 재생냉각채널에 사용되는 구리합금의 피로수명을 인장시험 데이터로부터 예측하기 위하여 기존의 연구자들이 제안하였던 수명예측식을 다양한 종류의 구리합금의 경우에 적용하여 비교하였다. 제안된 수명예측식 중 공통경사법은 구리합금의 수명 예측에서 가장 좋은 결과를 보여 주었으며, 수정 Mitchell 방법은 OFHC 구리의 수명 예측에서 가장 좋은 결과를 보여주었다.

• Nuclear Engineering and Technology
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• 제49권4호
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• pp.769-775
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• 2017

The corrosion behavior of stainless steel (304 and 316 type) and copper induced by LiCl-KCl at low temperatures in the presence of sufficient oxygen and moisture was investigated through a series of experiments (at $30^{\circ}C$, $40^{\circ}C$, $60^{\circ}C$, and $80^{\circ}C$ for 24 hours, 48 hours, 72 hours, and 96 hours). The specimens not coated on one side with an aqueous solution saturated with LiCl-KCl experienced no corrosion at any temperature, not even when the test duration exceeded 96 hours. Stainless steel exposed to LiCl-KCl experienced almost no corrosion below $40^{\circ}C$, but pitting corrosion was observed at temperatures above $60^{\circ}C$. As the duration of the experiment was increased, the rate of corrosion accelerated in proportion to the temperature. The 316 type stainless steel exhibited better corrosion resistance than did the 304 type. In the case of copper, the rate of corrosion accelerated in proportion to the duration and temperature but, unlike the case of stainless steel, the corrosion was more general. As a result, the extent of copper corrosion was about three times that of stainless steel.

• 자원리싸이클링
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• 제25권5호
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• pp.57-63
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• 2016

본 연구는 호주산 저품위 동광의 선광실험결과로 얻은 고품위 광물의 황산화 배소 및 선택적 침출반응 조건 확립을 통해 유가 광물 중에 함유된 성분을 선별적으로 용해해냄으로써 철 성분을 비롯한 불순물을 줄이거나, 동 및 니켈 성분을 용해 혹은 잔사에 잔류시킴으로써 유가금속회수를 효과적으로 회수하고자 하는데 목적이 있다. 본 연구실험결과 얻은 최적조건은 황산화 배소시 $450^{\circ}C$, $Na_2SO_4$ 2 mole ratio 및 1.5 h이었고, 배소산물의 침출온도는 상온 및 침출제는 $H_2O$ 혹은 1M $H_2SO_4$이었다. 최적조건 하에서 Cu 성분은 90 wt.% 침출율을 Fe성분은 20 wt.%내외, Ni성분은 15 wt.% 정도를 나타내는 것으로 보아 선택적 분해침출이 가능하다.