Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of Concentration of Electrolytes on the Electrochemical Properties of Copper

전해액의 농도가 Cu 전극의 전기화학적 특성에 미치는 영향

  • 이성일 (대불대학교 전기전자공학과) ;
  • 박성우 (조선대학교 에너지 자원 신기술 연구소) ;
  • 한상준 (조선대학교 전기공학과) ;
  • 이영균 (조선대학교 전기공학과) ;
  • 서용진 (대불대학교 전기전자공학과)
  • Published : 2007.06.21
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Abstract

The chemical mechanical polishing (CMP) process has been widely used to obtain global planarization of multilevel interconnection process for ultra large scale. integrated circuit applications. Especially, the application of copper CMP has become an integral part of several semiconductor device and materials manufacturers. However, the low-k materials at 65nm and below device structures because of fragile property, requires low down-pressure mechanical polishing for maintaining the structural integrity of under layer during their fabrication. In this paper, we studied electrochemical mechanical polishing (ECMP) as a new planarization technology that uses electrolyte chemistry instead of abrasive slurry for copper CMP process. The current-voltage (I-V) curves were employed we investigated that how this chemical affect the process of voltage induced material removal in ECMP of Copper. This work was supported by grant No. (R01-2006-000-11275-0) from the Basic Research Program of the Korea Science.

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