• Economic and Environmental Geology
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• v.19 no.1
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• pp.57-66
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• 1986

The ore deposit of the Ohtani mine is one of representatives of plutonic tungsten-tin veins related genetically to acidic magmatism of Late Cretaceous in the Inner zone of Southwest Japan. Based on macrostructures of vein filling, three major mineralization stages are distinguished by major tectonic breaks. The constituents of ore minerals are scheelite, cassiterite, chalcopyrite, pyrrhotite, sphalerite, with small amounts of cubanite, stannite, galena, native bismuth, bismuthinite, arsenopyrite and pyrite. The relationship between the polymorphic variations of pyrrhotite and the kinds of the associated characteristic of ore mineral, in relation with hypogene mineralization, has been demonstrated. Pyrrhotite of stage I is predominantly of the hexagonal phase (Hpo>Mpo). Pyrrhotite of stage II is mainly of the monoclinic phase ($Hpo{\ll}Mpo$). Pyrrhotite of stage III is a single monoclinic phase ($Hpo{\ll}Mpo$). The compositions of the hexagonal pyrrhotite decrease in Fe content ranging from 47.44 atom % Fe in stage I to 46.88 atom % Fe in stage III.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1189-1192
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• 2009

Short channel a-Si:H TFT devices with Cu electrodes have been investigated. Short channel TFTs are defined by new plasma etch process. When the channel length becomes shorter, the TFT characteristics (threshold voltage, off current, sub threshold voltage, etc.,) are degraded. These degraded characteristics can be improved through the hydrogen plasma treatment and new gate insulator structure. Using these processes, 15.0 inch XGA LCD panel was fabricated successfully where the channel length of the TFT devices was about 2.5 micrometers.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.7
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• pp.1152-1157
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• 1994

The glasses were prpared in the system CuI-CuS12TS-CuS12TO-MoOS13T by rapid quenching technique. These glasses have high ionic conductivities at 2$0^{\circ}C$ in the range of 10S0-1T[S/m], and the conductivities increase with increasing CuI and CuS12TS content. The value of activation energy for dielectric relaxation is nearly identical with that for conductivity. The cole-Cole parameter $\beta$ for representation of the distribution of dielectric relaxation times varies the range from 0.92 to 0.96. This parameter has a weak dependence on the composition of glass, and is independent of temperature. The correlation factors P for the glasses shows from 1.1 to 1.7.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.170-173
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• 2007

Organic field-effect transistors (OFETs) are of interest for use in widely area electronic applications. We fabricated the organic field-effect transistor based a copper phthalocyanine (CuPc) as an active layer on the silicon substrate. The CuPc FET device was made a topcontact type and the substrate temperature was room temperature and $150^{\circ}C$. The CuPc thickness was 40 nm, and the channel length was $50{\mu}m$, channel width was 3 mm. We observed the typical current-voltage (I-V) characteristics and capacitance-voltage (C-V) in CuPc FET and we calculated the effective mobility with each device. Also, we observed the AFM images with different substrate temperature.

• Journal of the Korean Chemical Society
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• v.55 no.2
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• pp.240-242
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• 2011

A large scale and commercially feasible synthesis of 5-chloroindole and its 3-substituted analogues has been described via a halogen - halogen exchange reaction from 5-bromoindole and its derivatives using cuprous chloride and dipolar aprotic solvent N-methyl-2-pyrrolidone in one pot with good yields.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.295-298
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• 2013

• Transactions on Electrical and Electronic Materials
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• v.12 no.1
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• pp.40-42
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• 2011

An organic field-effect transistor (OFET) was fabricated using a copper phthalocyanine (CuPc) as the active layer on the silicon substrate. The CuPc FET device was configured as a top-contact type. The substrate temperature was room temperature. The CuPc thickness was 40 nm, and the channel length and channel width were 100 ${\mu}m$ 3 mm, respectively. Typical current-voltage (I-V) characteristics of the CuPc FET were observed and subsequently compared to the UV/ozone treatment on substrate surface.

• Proceedings of the KIEE Conference
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• 1993.07a
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• pp.12-15
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• 1993

The correlation between electrical conduction and dielectric relaxation properties of copper ion conducting glasses is discussed. The glasses were prepared in the system $CuI-Cu_2S-Cu_2O-MoO_3$ using rapid quenching technique. These glasses have high ionic conductivities at room temperature in the range of $10^{\circ}$[S/m], and the conductivities increase with increasing CuI content. The activation energies for conduction are 0.26 - 0.57 eV. The dielectric relaxation times are 1 - 10uS, and the activation energy for ion jumping are 0.18 - 0.41eV. It is shown that the tendency of conduction properties depending on composition of the glass is similar those of dilectric relaxation.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.546-549
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• 1993

The correlation between electrical conduct ion and dielectric relaxation properties of copper ion conducting glasses is discussed. The glasses were prepared in the system $CuI-Cu_2S-Cu_2O-MoO_3$ using rapid quenching technique. These glasses have high ionic conductivities at room temperature in the range of $10^{circ}$[S/m], and the conductivities increase with increasing CuI content. The activation energies for conduction are 0.26-0.57 eV. The dielectric relaxation times are 1-10uS, and the activation energy for ion jumping are 0.18-0.41eV. It is shown that the tendency of conduction properties depending on composition of the glass is similar those of dilectric relaxation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.9
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• pp.527-531
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• 2016

In this study, p-type thin film transistors consisting of CuO channels were fabricated by sol-gel process, with copper (II) acetate monohydrate precursors. At $500^{\circ}C$, the deposited films were fully converted into monoclinic phase CuO. The fabricated CuO thin film transistors deliver field effect mobility in saturation regime of $0.015cm^2/Vs$, and $I_{on}/I_{off}$ of ${\sim}10^3$. The degradation of the performance of the fabricated CuO thin film transistor caused by the exposure to air has been studied.