• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.11
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• pp.107-113
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• 2016

All circuits in power input can only use the power provided by an external power supply. General electronic circuits use a secondary supply generated by a converter using a primary power in the power input. But protection and detection circuit for over-voltage circuit or under-voltage in power input have to use that input power because there is no other supply in power input. Therefore, previous electronics for satellite can protect only over-voltage using a zener diode, and can't detect over-voltage and under-voltage events, and provide a detection capability for over-voltage and under-voltage only for secondary supply. The proposed circuit can detect over-voltage and under-voltage using a single supply for the primary power input, +28V, with the threshold characteristics for MOS-FET, and the accuracy for a detection circuit is increased by 2.5%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.3
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• pp.397-409
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• 1993

This paper proposed the design methodology of the 8 bit binary parallel adder with carry book-ahead scheme via current-mode CMOS multivalued logic and simulated the proposed adder under $5{\mu}m$ standard IC process technology. The threshold conditions of $G_K$ and $P_K$ which are needed for m-valued parallel adder with CLA are evaluated and adopted for quaternary logic. The design of quaternary CMOS logic circuits, encoder, decoder, mod-4 adder, $G_K$ and $P_K$ detecting circuit and current-voltage converter is proposed and is simulated to prove the operations. These circuits are necessary for binary arithmetic using multivalued logic. By comparing with the conventional binary adder and the CCD-MVL adder, We show that the proposed adder cab be designed one look-ahead carry generator with 1-level structure under standard CMOS technology and confirm the usefulness of the proposed adder.

• Journal of Power Electronics
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• v.16 no.1
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• pp.362-373
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• 2016

The on-line measurement of high-power IGBT collector current is important for the hierarchical control and short-circuit and overcurrent protection of its driver and the sensorless control of the converter. The conventional on-line measurement methods for IGBT collector current are not suitable for engineering measurement due to their large-size, high-cost, low-efficiency sensors, current transformers or dividers, etc. Based on the gate driver, this paper has proposed a current measuring circuit for IGBT collector current. The circuit is used to conduct non-intervention on-line measurement of IGBT collector current by detecting the voltage drop of the IGBT power emitter and the auxiliary emitter terminals. A theoretical analysis verifies the feasibility of this circuit. The circuit adopts an operational amplifier for impedance isolation to prevent the measuring circuit from affecting the dynamic performance of the IGBT. Due to using the scheme for integration first and amplification afterwards, the difficult problem of achieving high accuracy in the transient-state and on-state measurement of the voltage between the terminals of IGBT power emitter and the auxiliary emitter (u_Ee) has been solved. This is impossible for a conventional detector. On this basis, the adoption of a two-stage operational amplifier can better meet the requirements of high bandwidth measurement under the conditions of a small signal with a large gain. Finally, various experiments have been carried out under the conditions of several typical loads (resistance-inductance load, resistance load and inductance load), different IGBT junction temperatures, soft short-circuits and hard short-circuits for the on-line measurement of IGBT collector current. This is aided by the capacitor voltage which is the integration result of the voltage uEe. The results show that the proposed method of measuring IGBT collector current is feasible and effective.

• Journal of IKEEE
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• v.28 no.1
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• pp.78-89
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• 2024

PMIC chips based on a BCD process used in automotive semiconductors require multi-time programmable (MTP) intellectual property (IP) that does not require additional masks to trim analog circuits. In this paper, MTP cell size was reduced by about 18.4% by using MTP cells using PMOS capacitors (PCAPs) instead of NMOS capacitors (NCAPs) in MTP cells, which are single poly EEPROM cells with two transistors and one MOS capacitor for small-area MTP IP design. In addition, from the perspective of MTP IP circuit design, the two-stage voltage shifter circuit is applied to the CG drive circuit and TG drive circuit of MTP IP design, and in order to reduce the area of the DC-DC converter circuit, the VPP (=7.75V), VNN (=-7.75V) and VNNL (=-2.5V) charge pump circuits using the charge pumping method are placed separately for each charge pump.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.8
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• pp.38-44
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• 2007

This paper describes a 12 bit 80MHz CMOS D/A converter for wireless transceiver. Proposed circuit in the paper employes segmented structure which consists of four stage 3bit thermometer decoders. Proposed D/A converter is manufactured 0.35um CMOS n-well digital standard process and measurement results show a ${\pm}1.36SB/{\pm}0.62LSB$ of INL/DNL and $46pV{\cdot}s$ of glitch energy. SNR and SFDR are measured to be 58.5dB and 64.97dB @ Fs=80MHz and Fin=19MHz with a total power consumption of 99mW. Such results proved that our work has low power consumption, high linearity, low glitch and improved dynamic performance. Therefore, our work can be appled to various high speed and high performance circuits.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.9
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• pp.21-26
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• 2016

This paper presents a step-down DC-DC buck converter with a CCM/DCM dual-mode function for the internal power stage of portable electronic device. The proposed converter that is operated with a high frequency of 1 MHz consists of a power stage and a control block. The power stage has a power MOS transistor, inductor, capacitor, and feedback resistors for the control loop. The control part has a pulse width modulation (PWM) block, error amplifier, ramp generator, and oscillator. In this paper, an external capacitor for compensation has been replaced with a multiplier equivalent CMOS circuit for area reduction of integrated circuits. In addition, the circuit includes protection block, such as over voltage protection (OVP), under voltage lock out (UVLO), and thermal shutdown (TSD) block. The proposed circuit was designed and verified using a $0.18{\mu}m$ CMOS process parameter by Cadence Spectra circuit design program. The SPICE simulation results showed a peak efficiency of 94.8 %, a ripple voltage of 3.29 mV ripple, and a 1.8 V output voltage with supply voltages ranging from 2.7 to 3.3 V.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.25 no.5B
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• pp.974-984
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• 2000

A CMOS voltage driver circuit for voltage down converter is proposed. An adaptive biasing technique is used to enhance load regulation characteristics. The proposed driver circuit uses the NMOS transistor as a driving transistor, so it does not suffer from large Miller capacitances which is one of the problems with conventional PMOS driving transistor, and hence achieves good phase margin and stable frequency response. No additional complex circuit for frequency compensation such as compensation capacitor is required in this implementation. For the same current capability, the size of NMOS transistor in driver circuit is smaller than that of PMOS counterpart. So the smaller die area can be achieved. The circuits is implemented using a 0.8 ${\mu}{\textrm}{m}$ CMOS process and has a die area of 150 ${\mu}{\textrm}{m}$ x 360 ${\mu}{\textrm}{m}$. Proposed circuit has a quiescent power of 60 . In the current driving range from 100 $mutextrm{A}$ to 50 ㎃, load regulation of 5.6 ㎷ is measured.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.8
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• pp.61-70
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• 2009

A 10b 30MS/s pipelined ADC operating under 1V power supply is presented. It utilizes a switched-RC based input sampling circuit and a resistive loop to reset the feedback capacitor in the multiplying digital-to-analog converter (MDAC) for the low-voltage operation. Cascaded switched-RC branches are used to achieve accurate grain of the MDAC for the first stage and separate switched-RC circuits are used in the sub-ADC to suppress the switching noise coupling to the MDAC input The measured differential and integral non-linearities of the prototype ADC fabricated in a 0.13${\mu}m$, CMOS process are less than 0.54LSB and 1.75LSB, respectively. The prototype ADC achieves 54.1dB SNDR and 70.4dB SFDR with 1V supply and 30MHz sampling frequency while consuming 17mW power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.8
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• pp.798-804
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• 2013

In this paper, conducted emission from the LDC(Low-Side DC/DC Converter) of a HEV/EV was analyzed using high-frequency circuit modeling in system-level approach. The conducted emission by PWM process(100 kHz; Switching Frequency) can cause RFI(Radio-Frequency Interference) problems in the AM/FM frequency range. In order to mitigate this conducted emission, a high-frequency equivalent circuit model is proposed by analyzing the fundamental circuits, parasitic components in their parts and connections and non-linear characteristics of MOSFETs, high-power capacitors, inverters, motors, high-power cables, and bus bars which are composed of the LDC. Using these circuit models, results of both simulation and measurement were compared and similarities between them were verified. We are looking forward that this approach can be effectively used in the EMC design of HEV/EV.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.2
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• pp.476-484
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• 2010

Recently, as the piezoelectric transformer technology develops, piezoelectric transformer may become a variable alternative to magnetic transformers in various applications. Because it was have to favorable characteristics such as electromagnetic-noise free, compact size, higher efficiency, and superior power density, linkage flux, noiseless, etc. its resonance frequency was used to output waveform of a sine wave. In this paper, the switching mode power supply of about 87.2[KHz] is driven by the multilayer thickness vibration mode piezoelectric transformer and the DC to DC converter drive circuit using an electrical equivalent circuit is proposed. Also, it was possible to drive power source device of the high-luminance LED by propose circuits.