• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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• pp.63-64
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• 2009

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and $25\;{\mu}m$) and channel lengths (70, 30, and $5\;{\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

• 한국정밀공학회지
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• 제24권5호
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• pp.118-126
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• 2007

A finite element simulation model was developed for the performance optimization of a closed type air-cell mattress used for the ulcer prevention. An H-model with material properties of human flesh and kinematic joints were used for the calculation of the body contact pressure. The material property of rubber air-cell was evaluated by tensile test of standard specimen. We evaluated the body contact pressure distribution after laying human model on the inflated air-cell mattress. It was found that the body contact pressure was dependent on cell height. but hardly affected by the thickness of the rubber in a cell.

• 한국전기전자재료학회논문지
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• 제22권9호
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• pp.747-750
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• 2009

The TFTs have been fabricated with 3 different geometry SID electrodes which have the same channel W/L ratio (W/L = 5) due to constant channel resistance, The 3 samples have different channel widths (350, 150, and 25 ${\mu}m$) and channel lengths (70, 30, and 5 ${\mu}m$) by fixed channel W/L ratio simultaneously on one chip for reliable comparisons. Resultant on-current and field effect mobility are proportional to the channel width, while the subthreshold swing is inversely proportional to the channel width mainly due to the change of contact resistance. These results show that the contact resistance strongly affects the device performances and should be considered in the applications.

• 한국복합재료학회:학술대회논문집
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• 한국복합재료학회 2004년도 춘계학술발표대회 논문집
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• pp.206-209
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• 2004

Mechanical behavior of a fuel stack was studied using an orthotropic material model. The fuel stack is essentially composed of a bipolar plate (BP), a gasket, an end plate, a membrane electrolyte assembly (MEA), and a gas diffusion layer (GDL). Each component is fastened with a suitable pressure. It is important to maintain a suitable contact pressure distribution of BP, because it influences the power efficiency of the fuel cell stack. When it is exposed to high temperature, its behavior must be stable. Hence, we performed stress analysis at high temperature as well as at room temperature. At high temperature, the contact pressure distribution becomes poor. Many patents have shown that using an elastomer can overcome this phenomena. Its effect was also studied. By using an elastomer, we found a good contact pressure distribution at high temperature as well as at room temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.173-176
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• 2000

In this paper, we investigated the surface degradation of HTV silicone rubber used for a polymeric insulator by UV irradiation. To study the surface ageing properties by W irradiation, we used the corona discharge charging and contact angle. Therefore, we observed the change of surface charge retention and decrease of surface hydrophobicity. Also, we discussed the chemical change in the surface range using the analytic equipment such as SEM, ATR-FTIR, ESCA. Therefore, it is found that the scissor of characteristic bonding and the reattachment of oxidant bonding was developed by UV rays radiation. As discussing the corona ischarge charging and the change of contact angle, it is found the effect of UV irradiation and the mechanism of chemical reaction

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.874-878
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• 2001

Solder bump was electroplated on wafer for flip chip application. The process is as follows. Ti/Cu were sputtered and thick PR was formed by several coating PR layer. Fine pitch vias were opened using via mask and then Cu stud and solder bump were electroplated. Finally solder bump was formed by reflow process. In this paper, we opened 40㎛ vias on 57㎛ thick PR layer and electroplated solder bump with 70㎛ height and 40㎛ diameter. After reflow process, we could form solder bump with 53㎛ height and 43㎛ diameter. In plating process, we improved the plating uniformity within 3% by using ring contact instead of conventional multi-point contact.

• 한국전기전자재료학회논문지
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• 제15권1호
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• pp.7-14
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• 2002

In this paper, neutral networks are used to build models of oxide film etched In CHF$_3$/CF$_4$ with a magnetically enhanced reactive ion etcher(MERIE). A statistical 2$\^$4-1/ experimental design plus one center point was used to characterize relationships between process factors and etch responses. The factors that were varied include radio frequence(rf) power, pressure, CHF$_3$ and CF$_4$ flow rates. Resultant 9 experiments were used to train neural networks and trained networks were subsequently tested on its appropriateness using additionally conducted 8 experiments. A total of 17 experiments were thus conducted for this modeling. The etch responses modeled are dc bias voltage, etch rate and etch uniformity A qualitative, good agreement was obtained between predicted and observed behaviors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 제6회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.52-56
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• 2004

The movement of electron in the semiconductor-gap-semiconductor was observed by the variation of V-I characteristic as a distance two ZnO(1010) single crystals. When the resistance between two crystals was $10^2{\sim}10^4{\Omega}$, V-I characteristics had the pattern of the field emission or ohmic contact. On the other hand, when the resistance was larger than $10^7{\Omega}$ by increasing the distance between two crystals, the effect of surface barrier was prominent. This result leads to the conclusion that both the field emission (or ohmic contact) and the surface barrier effect including the tunneling have the influence on V-I characteristics of mechanically contacted crystals.

• 한국전기전자재료학회논문지
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• 제13권5호
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• pp.411-419
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• 2000

In this paper we have investigated the surface degradation by ultraviolet-irradiation in high-temperature vulcanized silicone rubber. Through the measurement of surface potential decay by corona-charging and of contact angle it is found that the change of surface electrostatic properties and the decrease of contact angle under UV-radiation. For the changes in micro-morphological and chemical structure of the UV-treated silicone rubber we utilized several analytical techniques such as SEM, ATR-FTIR,XPS. From this study it is shown that the chemical reactions(scissoring of side chain(S-$CH_3$) cross-linking and branching) occur on the surface of silicone rubber during the UV-irradiation. Also we obtained the results of the loss of low molecular weight chain by cross-linking and oxidation reaction.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.417-420
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• 2004

The electrical effects of dry-etch on n-type GaN by an inductively coupled $Cl_2/CH_4/H_2/Ar$ plasma were investigated as a function of ion energy, by means of ohmic and Schottky metallization method. The specific contact resistivity(${\rho}_c$) of ohmic contact was decreased, while the leakage current in Schottky diode was increased with increasing ion energy due to the preferential sputtering of nitrogen. At a higher rf power, an additional effect of damage was found on the etched sample, which was sensitive to the dopant concentration in terms of the ${\rho}_c$ of ohmic contact. This was attributed to the effects such as the formation of deep acceptor as well as the electron-enriched surface layer within the depletion layer. Furthermore, thermal annealing process enhanced the ohmic and Schottky property of heavily damaged surface.