Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Neural Network Models of Oxide Film Etch Process for Via Contact Formation

Via Contact 형성을 위한 산화막 식각공정의 신경망 모델

  • 박종문 (한국전자통신연구원 반도체신기술연구소) ;
  • 권성구 (한국전자통신연구원 반도체신기술연구소) ;
  • 박건식 (한국전자통신연구원 반도체신기술연구소) ;
  • 유성욱 (한국전자통신연구원 반도체신기술연구소) ;
  • 배윤구 (한국전자통신연구원 반도체신기술연구소) ;
  • 김병환 (세종대학교 전자공학과) ;
  • 권광호 (한서대학교 전자공학과)
  • Published : 2002.01.01
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Abstract

In this paper, neutral networks are used to build models of oxide film etched In CHF$_3$/CF$_4$ with a magnetically enhanced reactive ion etcher(MERIE). A statistical 2$\^$4-1/ experimental design plus one center point was used to characterize relationships between process factors and etch responses. The factors that were varied include radio frequence(rf) power, pressure, CHF$_3$ and CF$_4$ flow rates. Resultant 9 experiments were used to train neural networks and trained networks were subsequently tested on its appropriateness using additionally conducted 8 experiments. A total of 17 experiments were thus conducted for this modeling. The etch responses modeled are dc bias voltage, etch rate and etch uniformity A qualitative, good agreement was obtained between predicted and observed behaviors.

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References

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