Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on New LDD Structure for Improvements of Hot Carrier Reliability

핫 캐리어 신뢰성 개선을 위한 새로운 LDD 구조에 대한 연구

  • 서용진 (대불대학교 전기공학과) ;
  • 김상용 (아남반도체 FAB 사업부) ;
  • 이우선 (조선대학교 전기공학과) ;
  • 장의구 (중앙대학교 전자전기제어공학부)
  • Published : 2002.01.01
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Abstract

The hot carried degradation in a metal oxide semiconductor device has been one of the most serious concerns for MOS-ULSI. In this paper, three types of LDD(lightly doped drain) structure for suppression of hot carried degradation, such as decreasing of performance due to spacer-induced degradation and increase of series resistance will be investigated. in this study, LDD-nMOSFETs used had three different drain structure, (1) conventional surface type LDD(SL), (2) Buried type LDD(BL), (3) Surface implantation type LDD(SI). As experimental results, the surface implantation the LDD structure showed that improved hot carrier lifetime to comparison with conventional surface and buried type LDD structures.

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References

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