• Title/Summary/Keyword: Concentration depth profile

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The Doping Profile Modeling of Crystalline Silicon Solar Cell with PC1D simulation (PC1D 시뮬레이션을 이용한 결정질 실리콘 태양전지의 도핑 프로파일 모델링)

  • Choi, Sung-Jin;Yu, Gwon-Jong;Song, Hee-Eun
    • 한국태양에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.149-153
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    • 2011
  • The PC1D is widely used for modeling the properties of crystalline silicon solar cell. Optimized doping profile in crystalline silicon solar cell fabrication is necessary to obtain high conversion efficiency. Doping profile in the forms of a uniform, gaussian, exponential and erfc function can be simulated using the PC1D program. In this paper, the doping profiles including junction depth, dopant concentration on surface and the form of doping profile (gaussian, gaussian+erfc function) were changed to study its effect on electrical properties of solar cell. As decreasing junction depth and doping concentration on surface, electrical properties of solar cell were improved. The characteristics for the solar cells with doping profile using the combination of gaussian and erfc function showed better open-circuit voltage, short-circuit current and conversion efficiency.

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Correction of Secondary ion Mass Spectrometry depth profile distorted by oxygen flooding (Oxygen flooding에 의해 왜곡된 SIMS depth profile의 보정)

  • 이영진;정칠성;윤명노;이순영
    • Journal of the Korean Vacuum Society
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    • v.10 no.2
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    • pp.225-233
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    • 2001
  • Distortion of Secondary Ion Mass Spectrometry(SIMS) depth profile, which is usually observed when the analysis is made using oxygen flooding on the surface of Si with oxide on it, has been corrected. The origin of distortion has been attributed to depth calibration error due to sputter rate difference and concentration calibration error due to relative sensitivity factor(RSF) difference between $SiO_2$ and Si layers, In order to correct depth calibration error, artifact in analysis of sodium ion on oxide was used to define the interface in SIMS depth profile and oxide thickness was measured with SEM and XPS. The differences of sputter rate and RSF between two layers have been attributed to volume swelling of Si substrate occurred by oxygen flooding induced oxidation. The corrected SIMS depth profiles showed almost the same results with those obtained without oxygen flooding.

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A Study of defect distribution and profiles of MeV implanted phosphorus in silicon (실리콘에 MaV로 이온주입된 인의 결함분포와 profile에 관한 연구)

  • 정원채
    • Electrical & Electronic Materials
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    • v.10 no.9
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    • pp.881-888
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    • 1997
  • This study demonstrats the profiles of phosphorus ions in silicon by MeV implantation(1∼3 MeV). Implanted profiles could be measured by SIMS(Cameca 4f) and compared with simulation results(TRIM program and analytical description method only using on Pearson function). The experimental result in the peak concentration region has a little bit deviation from simulation data. By RBS and Channeling measurements the defect distribution of implanted samples could be measured and spectrum are calibrated depth with RUMP simulation By XTEM measurement the thickness of defect zone also could be measured. Finally thermal annealing for the electrical activation of implanted ions carried out by RTA(rapid thermal annealing). The concentration-depth profiles after heat treatment was measured by SR(spreading resistance)-method.

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TCAD Simulation을 이용한 LBC Solar Cell의 Local BSF Doping Profile 최적화에 관한 연구

  • An, Si-Hyeon;Park, Cheol-Min;Kim, Seon-Bo;Jang, Ju-Yeon;Park, Hyeong-Sik;Song, Gyu-Wan;Choe, U-Jin;Choe, Jae-U;Jang, Gyeong-Su;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.603-603
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    • 2012
  • 최근에 전면 emitter의 doping profile이 다른 selective emitter solar cell은 실제 제작시단파장 영역에서 많은 gain을 얻을 수 없어 LBC 구조의 태양전지에 관한 연구가 많이 진행되고 있다. 본 연구는 TCAD simulation을 이용하여 후면에 형성되는 locally doped BSF(p++) region의 doping profile의 변화에 따른 태양전지 특성에 관한 연구이다. Al으로 형성되는 local back contact의 doping depth 및 surface concentration에 따른 전기적, 광학적 분석을 통해 주도적인 인자를 분석하고 최적화하였다. 특히 doping depth에 따른 변화보다는 surface concentration의 변화에 따른 특성변화가 주도적으로 나타났다.

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Application of Regularization Method to Angle-resolved XPS Data (각분해X-선광전자분광법 데이터 분석을 위한 regularization 방법의 응용)

  • 노철언
    • Journal of the Korean Vacuum Society
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    • v.5 no.2
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    • pp.99-106
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    • 1996
  • Two types of regularization method (singular system and HMP approaches) for generating depth-concentration profiles from angle-resolved XPS data were evaluated. Both approaches showed qualitatively similar results although they employed different numerical algorithms. The application of the regularization method to simulated data demonhstrates its excellent utility for the complex depth profile system . It includes the stable restoration of depth-concentration profiles from the data with considerable random error and the self choice of smoothing parameter that is imperative for the successful application of the regularization method. The self choice of smoothing parameter is based on generalized cross-validation method which lets the data themselves choose the optimal value of the parameter.

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Fabrication of Titanium Microchannels by using Ar+ Laser-assited Wet Etching (레이저 유도에칭을 이용한 티타늄 미세채널 제조)

  • 손승우;이민규;정성호
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2004.10a
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    • pp.709-713
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    • 2004
  • Characteristics of laser-assisted wet etching of titanium in phosphoric acid were investigated to examine the feasibility of this method for fabrication of high aspect ratio microchannels. Laser power, number of scans, etchant concentration, position of beam waist and scanning speed were taken into consideration as the major process parameters exerting the temperature distribution and the cross sectional profile of etched channels. Experimental results indicated that laser power influences on both etch width and depth while number of scans and scanning speed mainly affect on the etch depth. At a low etchant concentration, the cross sectional profile of an etched channel becomes a U-shape but it gradually turns into a V-shape as the concentration increases. On the other hand, surface of the laser beam focus with respect to the sample surface is found to be a key factor determining the bubble dynamics and thus the process stability. It is demonstrated that metallic microchannels with different cross sectional profiles can be fabricated by properly controlling the process parameters. Microchannels of aspect ratio up to 8 with the width and depth ranges of 8∼32 m and 50∼300 m, respectively, were fabricated.

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Cosmogenic 10Be Depth Profile Dating of Strath Terrace Abandonment using Monte Carlo Simulation (몬테카를로 시뮬레이션을 이용한 하안단구 10Be 수직단면 연대측정)

  • Kim, Dong-Eun;Seong, Yeong Bae;Kim, Jong-Geun
    • Journal of The Geomorphological Association of Korea
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    • v.26 no.4
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    • pp.21-31
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    • 2019
  • Timing of terrace formation is a key information for understanding the evolution of fluvial systems. In particular, dating strath terrace (i.e. timing of terrace abandonment) is more difficult than depositional terrace that is conventionally constrained by radiocarbon, OSL and other dating methods targeting samples within terrace deposit. Surface exposure dating utilizing cosmogenic 10Be provides more reliability because it can be applied directly to the surface of a fluvial terrace. Thus, this method has been increasingly used for alluvial deposits. As well as other geomorphic surfaces over the last decades. Some inherent conditions, however, such as post-depositional 10Be concentration (i.e. inheritance), surface erosion rate, and density change challenge the application of cosmogenic 10Be to depositional terrace surface against simple bedrock surface. Here we present the first application of 10Be depth profile dating to a thin-gravel covered strath terrace in Korea. Monte Carlo simulation (MCS) helped us in better constraining the timing of abandonment of the strath terrace, since which its surface stochastically denuded with time, causing unexpected change of 10Be production with depth. The age of the strath terrace estimated by MCS was 109 ka, ~4% older than the one (104 ka) calculated by simple depth profile dating, which yielded the best-fit surface erosion rate of 2.1 mm/ka. Our study demonstrates that the application of 10Be depth profile dating of strath terrace using MCS is more robust and reliable because it considers post-depositional change of initial conditions such as erosion rate.

Evaluation of Chloride Ion Penetration Characteristics for Concrete Structures at Coastal Area (해안지역 콘크리트 구조물의 염소이온침투특성 평가)

  • Han, Sang-Hun;Yi, Jin-Hak;Park, Woo-Sun
    • Journal of Korean Society of Coastal and Ocean Engineers
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    • v.23 no.1
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    • pp.11-17
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    • 2011
  • A major source of durability problems in concrete structures is the corrosion of steel by the damage of passivity layer around steel bars. As chloride ion penetration is major cause of the destruction of passivity layer, evaluation of depth and concentration profile of chloride ion is the essential factor for the service-life estimation of concrete structure. To estimate chloride ion penetration characteristics, this paper on the basis of in-situ experimental data investigated the depth and concentration profile of chloride ion penetration. The core specimens are obtained at air-zone, splash zone, and tidal zone in Wando, Masan, Incheon, Gwangyang, and donghae harbors. Colorimentric method measured the chloride ion penetration depth and ASTM C 114 evaluated the concentration profile of chloride ion. Based on experimental data, the influence of harbor location and exposure condition on chloride ion penetration is evaluated.

Analysis of radon depth profile in soil air after a rainfall by using diffusion model

  • Maeng, Seongjin;Han, Seung Yeon;Lee, Sang Hoon
    • Nuclear Engineering and Technology
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    • v.51 no.8
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    • pp.2013-2017
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    • 2019
  • The radon concentrations in soil air were measured before and after a rainfall. 226Ra concentration, porosity, moisture content and temperature in soil were measured at Kyungpook National University in Daegu. As the results of measurement and analysis, the arithmetic mean of measured 222Rn concentration increased from 12100 ± 500 Bq/㎥ to 16200 ± 600 Bq/㎥ after the rainfall. And the measured 226Ra concentration was 61.4 ± 5.7 Bq/kg and the measured porosity was 0.5 in soil. The estimated values of 226Ra concentration and porosity using diffusion model of 222Rn in soil were 60.3 Bq/kg and 0.509, respectively. The estimated values were similar to the measured values. 222Rn concentration in soil increased with depth and moisture content. The estimations were obtained through fitting based on the diffusion model of 222Rn using the measurement values. The measured depth profiles of 222Rn were similar to the calculated depth profiles of 222Rn in soil. We hope that the results of this study will be useful for environmental radiation analysis.

An Experimental Study on the Deformation of Boron Doped Silicon Diaphragms due to the Residual Stress (붕소가 도핑된 실리콘 박막의 잔류응력으로 인한 변형에 관한 실험적 연구)

  • Yang, E.H.;Yang, S.S.;Ji, Y.H.
    • Proceedings of the KIEE Conference
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    • 1994.07a
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    • pp.72-75
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    • 1994
  • In this paper, a novel method to figure out the relative residual stress distribution along the depth of silicon diaphragms is presented Cantilevers with various thickness are fabricated by the time controlled etching method using EPW as an etchant. The boron concentration along the depth of the cantilevers is obtained by the TSUPREM IV simulation, and the etching time to get the proper thickness is calculated. By measuring deflections of the p+ silicon cantilevers the stress profile along the depth of diaphragm is calculated. The obtained stress profile is reasonable and useful to expect the deflection of cantilevers and the buckling of diaphragms.

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