An Experimental Study on the Deformation of Boron Doped Silicon Diaphragms due to the Residual Stress

붕소가 도핑된 실리콘 박막의 잔류응력으로 인한 변형에 관한 실험적 연구

In this paper, a novel method to figure out the relative residual stress distribution along the depth of silicon diaphragms is presented Cantilevers with various thickness are fabricated by the time controlled etching method using EPW as an etchant. The boron concentration along the depth of the cantilevers is obtained by the TSUPREM IV simulation, and the etching time to get the proper thickness is calculated. By measuring deflections of the p+ silicon cantilevers the stress profile along the depth of diaphragm is calculated. The obtained stress profile is reasonable and useful to expect the deflection of cantilevers and the buckling of diaphragms.