• Journal of Magnetics
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• 제4권3호
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• pp.88-91
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• 1999

A series of NiO/NiFe bilayer films are deposited with the variation of Ar sputtering pressure for the NiO layers only. As the pressure for the NiO layers increases, the exchange anisotropy field (HEX) decreases gradually and becomes extinct at 2.5 mTorr, at which the maximum coercive force (HC) in the NiO/NiFe films is obtained. Randomly oriented columnar structures with HEX a few tens of Oe and oriented columnar structures with zero HEX are observed in the NiP layers by highvoltage hihg-resolution transmission electron microscopy. The vanishing of the HEX in the oriented structures is attributed to the lack of exchange anisotropy energy (EEX) between NiO and NiFe layers, which results in little contribution of interfacial unidirectional pinning anisotropy to the interface of NiO/NiFe bilayer.

• 대한금속재료학회지
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• 제46권7호
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• pp.420-426
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• 2008

By using electrodeposition, we developed a new method to produce Ni/Invar bimetal sheets, which have been used for the present study to investigate the texture evolution during annealing. The grains of electrodeposited Ni were columnar, while those of electrodeposited Fe-Ni alloy were nanocrystalline. These different parts of the bimetal underwent different evolution of textures and microstructures during annealing. In the nanocrystalline Invar, the as-deposited textures were of fiber-type characterized by strong <100>//ND and weak <111>//ND components, and the occurrence of grain growth resulted in the strong development of the <111>//ND fiber texture with the minor <100> // ND components. On the other hand, in the columnar-structured Ni part, the as-deposited <110>//ND fiber texture transformed to the <112>//ND fiber texture due to recrystallization occurring above $550^{\circ}C$. The development of microtextures which took place during annealing in the Ni/Invar interfacial regions was investigated by using the OIM analysis, and discussed in terms of the effect of atomic diffusion across the interfaces.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.275-280
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• 1997

We have investigated the deposition characteristics of (Ni0.8Fe0.2)20Ag80 thin films as a function of chamber pressure and nitrogen flow rate with scanning electron microscopy(SEM), atomic force microscopy(AFM), XRD and $\alpha$-step. The deposition rate of these film is decreased with increasing the chamber pressure and the nitrogen flow rate. With raising the chamber pressure, the growth mode of thin film is changed from island growth to columnar one, which is probably due to energy of atom. Contrary, the nitrogen flow rate is raised, growth mode is changed from columnar to island one. According to the XRD patterns, the preferred orientation is inhibited as the nitrogen flow rate is kept above 10 sccm, but that is nearly independent on the chamber pressure. When the chamber pressure decrease or the nitrogen flow rate increase, phase separation into permoally and silver is occured.

• 대한금속재료학회지
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• 제47권5호
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• pp.322-329
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• 2009

60 nm- and 20 nm-thick hydrogenated amorphous silicon (a-Si:H) layers were deposited on 200 nm $SiO_2/Si$ substrates using ICP-CVD (inductively coupled plasma chemical vapor deposition). A 10 nm-Ni layer was then deposited by e-beam evaporation. Finally, 10 nm-Ni/60 nm a-Si:H/200 nm-$SiO_2/Si$ and 10 nm-Ni/20 nm a-Si:H/200 nm-$SiO_2/Si$ structures were prepared. The samples were annealed by rapid thermal annealing for 40 seconds at $200{\sim}500^{\circ}C$ to produce $NiSi_x$. The resulting changes in sheet resistance, microstructure, phase, chemical composition and surface roughness were examined. The nickel silicide on a 60 nm a-Si:H substrate showed a low sheet resistance at T (temperatures) >$450^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate showed a low sheet resistance at T > $300^{\circ}C$. HRXRD analysis revealed a phase transformation of the nickel silicide on a 60 nm a-Si:H substrate (${\delta}-Ni_2Si{\rightarrow}{\zeta}-Ni_2Si{\rightarrow}(NiSi+{\zeta}-Ni_2Si)$) at annealing temperatures of $300^{\circ}C{\rightarrow}400^{\circ}C{\rightarrow}500^{\circ}C$. The nickel silicide on the 20 nm a-Si:H substrate had a composition of ${\delta}-Ni_2Si$ with no secondary phases. Through FE-SEM and TEM analysis, the nickel silicide layer on the 60 nm a-Si:H substrate showed a 60 nm-thick silicide layer with a columnar shape, which contained both residual a-Si:H and $Ni_2Si$ layers, regardless of annealing temperatures. The nickel silicide on the 20 nm a-Si:H substrate had a uniform thickness of 40 nm with a columnar shape and no residual silicon. SPM analysis shows that the surface roughness was < 1.8 nm regardless of the a-Si:H-thickness. It was confirmed that the low temperature silicide process using a 20 nm a-Si:H substrate is more suitable for thin film transistor (TFT) active layer applications.

• KIEE International Transactions on Electrophysics and Applications
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• 제3C권1호
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• pp.23-27
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• 2003

Structural properties of Cu-Ni alloy films, such as preferred orientation, crystallite size, in-ter-planar spacing, cross-sectional morphology, and electrical resistivity, are investigated in terms of tar-get configurations that are used in the film deposition by means of magnetron co-sputtering. Two different target configurations are considered in this study: a dual-type configuration in which two separate tar-gets (Cu and Ni) and different bias types (RF and DC) are used and a Ni-on-Cu type configuration in which Ni chips are attached to a Cu target. The dual-type configuration appears to have some advantages over the Ni-on-Cu type regarding the accurate control of atomic composition of the deposited Cu-Ni alloy. However, the dual-type-produced film exhibits a porous and columnar structure, the relatively large internal stress, and the high electrical resistivity, which are mainly due to the relatively low mobility of adatoms. The affects of thermal treatment and deposition conditions on the structural and electrical properties of dual-type Cu-Ni films are also discussed.

• 한국세라믹학회지
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• 제53권1호
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• pp.81-86
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• 2016

The effect of substrate rotation speed on the phase forming behavior and microstructural variation of 8 wt% yttria ($Y_2O_3$) stabilized $ZrO_2$ (8YSZ) coatings as a thermal barrier coating has been investigated. 8YSZ coatings with $100{\sim}200{\mu}m$ thickness were deposited by electron beam-physical vapor deposition onto a super alloy (Ni-Cr-Co-Al) substrate with a bond coating (NiCo-CrAlY). The width of the columnar grains of the 8YSZ coatings increased with increasing substrate rotation speed from 1 to 30 rpm at a substrate temperature range of $900{\sim}950^{\circ}C$. In spite of the different growth behaviors of coatings with different substrate rotation speeds, the phases of each coating were not changed remarkably. Even after post heat treatments with various conditions of the coated specimens fabricated at 20 rpm, only a change of color was noticeable, without any remarkable change in the phase or microstructure.

• 대한기계학회논문집
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• 제12권5호
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• pp.1083-1091
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• 1988

본 연구에서는 위의 두번째 연구동향과 맥락을 같이하는 것으로서 스테인리스 강(SUS304)에 대한 진공브레이징 연구 및 탄소강의 진공 브레이징에 대한 연구결과들 을 토대로 하여 SUS304와 탄소강과의 진공브레이징 현상을 연구하였는데 특히 모재의 탄소함유량, 브레이징시간 및 접합부 틈새(joint clearance)등에 따라 접합부에 나타 나는 여러 금속학적 현상의 규명 및 접합강도(joint strength)에 대해 변수들이 미치 는 영향을 연구 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.98-104
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• 2002

CeO$_2$ and NiO buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition(MOCVD) and the deposition behavior were investigated. The degree of texture of deposited CeO$_2$ and NiO films was strongly dependent on the deposition temperature(T$\sub$d/) and oxygen partial pressure(P$\sub$O$_2$/). ($\ell$00) textured films were well deposited at specific deposition temperatures and oxygen partial pressures. The in-plane and out of plane textures estimated form the full width half maximum of the pole figure peaks were less than 10$^{\circ}$. The surface morphology showed that the CeO$_2$ films consisted of columnar grains grown normal to the Ni substrates, while NiO films were slate and clean like a mirror. The surface roughness of both films estimated by atomic force microscopy(AFM) were as smooth as 3-10 m. The growth rate of the films is much faster than that of other physical deposition methods.

• 한국주조공학회지
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• 제29권5호
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• pp.187-191
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• 2009

Microstructures and shape memory characteristics of $Ti_{50}Ni_{20}Cu_{30}$ alloy strips fabricated by arc melt overflow have been investigated by means of XRD, optical microscopy and DSC. The microstructure of as-cast strips exhibited columnar grains normal to the strip surface. X-ray diffraction analysis showed that one-step martensitic transformation of B2-B19 occurred in the alloy strips. According to the DSC analysis, it was known that the martensitic transformation temperature ($M_s$) of B2 $\rightarrow$ B19 in $Ti_{50}Ni_{20}Cu_{30}$ strip is $57^{\circ}C$. During thermal cyclic deformation with the applied stress of 60 MPa, transformation hysteresis and elongation associated with the B2-B19 transformation were observed to be $3.7^{\circ}C$ and 1.6%, respectively. The as-cast strip of $Ti_{50}Ni_{20}Cu_{30}$ alloy also showed a superelasticity and its stress hysteresis was as small as 14 MPa. These mechanical properties and shape memory characteristics of the alloy strips were ascribed to B2-B19 transformation and the controlled microstructures produced by rapid solidification of the arc melt overflow process.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2015년도 추계학술대회 논문집
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• pp.344-345
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• 2015

Various concentration of copper was dopped in Fe-35%Ni thin sheet by electroforming and their electromagnetic, surface properties were determined. Microstructure observation by scanning electron microscopy revealed that the thin sheet had columnar grains with about 150 nm long. Phase analysis by X-ray diffractometry revealed that the alloy thin sheets were fine crystalline. The average surface roughnesses measured by atomic force microscopy (AFM) were about 14.38 nm. Nano hardnesses determined by tribo-nano indenter were 4.13 GPa. The surface resistances were 2.28 ohm/sq. The maximum magnetization, residual magnetization and coercive force depended on the copper concentration.