Abstract
CeO$_2$ and NiO buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition(MOCVD) and the deposition behavior were investigated. The degree of texture of deposited CeO$_2$ and NiO films was strongly dependent on the deposition temperature(T$\sub$d/) and oxygen partial pressure(P$\sub$O$_2$/). ($\ell$00) textured films were well deposited at specific deposition temperatures and oxygen partial pressures. The in-plane and out of plane textures estimated form the full width half maximum of the pole figure peaks were less than 10$^{\circ}$. The surface morphology showed that the CeO$_2$ films consisted of columnar grains grown normal to the Ni substrates, while NiO films were slate and clean like a mirror. The surface roughness of both films estimated by atomic force microscopy(AFM) were as smooth as 3-10 m. The growth rate of the films is much faster than that of other physical deposition methods.