• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1999년도 제30회 추계학술대회
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• pp.103-113
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• 1999

Point contact film thickness in elastohydrodynamic lubrication (EHL) is analyzed by the image processing method for the monochromatic incident light. Interference between the reflected lights both on Cr coating of glass disk and on super finished ball makes circular fringes, which are regarded as film thickness together with numbering of fringe order. In this study, we developed technology to measure the film thickness by analyzing dark and bright intensity waves which results from monochrome green light. Two typical fringe patterns only with intensity values 3re examined for the measurement of point contact EHL film thickness. We expect that this technology will give valuable clue to improve color image processing analysis for high resolution of EHL film thickness with white incident light.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.114-114
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• 2000

III-nitride 게 물질들은 blue와 UV 영역의 LED, LD와 같은 광소자뿐만 아니라 HBT, FET와 같은 전자소자로도 널리 응용되고 있다. 이와 같은 물질을 이용한 소자를 제작할 경우 낮은 저항의 ohmic contact은 필수적이다. p-GaN의 ohmic contact은 아직까지 많은 문제점을 내포하고 있다. 그 중의 하나는 높은 doping 농도(>1018cm-3)의 p-GaN 박막을 성장하기가 어렵다는 것이며, 또 하나는 낮은 접촉 비저항을 얻기 위해선 7.5eV 이상의 큰 재가 function을 지닌 금속을 선택해야 한다. 그러나 5.5eV 이상의 재가 function을 갖는 금속은 존재하지 않는다. 위와 같은 문제점들은 p-GaN의 접촉 비저항이 10-2$\Omega$cm2이상의 높은 값을 갖게 만들고 있으며 이에 대한 해결방안으로는 고온의 열처리를 통하여 p-GaN와 금속사이에서 화학적 반응을 일으킴으로써 표면근처에서 캐리어농도를 증가시키고, 캐리어 수송의 형태가 tunneling 형태로 일어날 수 있도록 하는 tunneling current mechaism을 이용하는 것이다. 이에 본 연구에서는 MOCVD로 성장된 p-GaN 박막을 Mg의 activation을 증가시키기 위해 N2 분위기에서 4분간 80$0^{\circ}C$에서 RTA로 annealing을 하였으며, ohmic 접촉을 위한 금속으로 높은 재가 function과 좋은 adhesion 그리고 낮은 자체저항을 가지고 있는 Ni/ZSi/Ni/Au를 ohmic metal로 하여 contact한 후에 $700^{\circ}C$에서 1분간 rapid thermal annealing (RTA) 처리를 했다. contact resistance를 계산하기 위해 circular-TLM method를 이용하여 I-V 특성을 조사하였고, interface interaction을 알아보기 위해 SEM과 EDX, 그리고 XRD로 분석하였다. 또한 추가적으로 Si 계열의 compound metal인 PdSi와 PtSi에 대한 I-V 특성도 조사하여 비교하여 보았다.

• 설비공학논문집
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• 제23권12호
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• pp.843-851
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• 2011

A two-dimensional immiscible water meniscus deformation phenomena on a moving tip in a channel has been investigated by using lattice Boltzmann method involving two-phase model. We studied the behavior of a water meniscus between the tip and a solid surface. The contact angles of the tip and a solid surface considered are in the range from $10^{\circ}$ to $170^{\circ}$. The velocity of the tip used in the study are 0.01, 0.001, and 0.0001. The shapes of tip considered are rectangular and circular. The behavior of water confined between the tip and a solid surface depends on the contact angles of the tip and a solid surface, and the tip velocity. When the tip is moving, we can observe the various behaviors of shear deformation of a water meniscus. As time goes on, the behavior of a water meniscus can be classified into three different patterns which are separated from the tip or adhered to the tip or sticked to a solid surface according to the contact angles and the tip velocity.

• Structural Engineering and Mechanics
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• 제62권1호
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• pp.113-123
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• 2017

The bi-material elastic system consisting of the circular hollow cylinder and the infinite elastic medium surrounding this cylinder is considered and it is assumed that on the inner free face of the cylinder a point-located axisymmetric time harmonic force, with respect to the cylinder's axis and which is uniformly distributed in the circumferential direction, acts. The shear-spring type imperfect contact conditions on the interface between the constituents are satisfied. The mathematical formulation of the problem is made within the scope of the exact equations of linear elastodynamics. The focus is on the frequency-response of the interface normal and shear stresses and the influence of the problem parameters, such as the ratio of modulus of elasticity, the ratio of the cylinder thickness to the cylinder radius, and the shear-spring type parameter which characterizes the degree of the contact imperfectness, on these responses. Corresponding numerical results are presented and discussed. In particular, it is established that the character of the influence of the contact imperfection on the frequency response of the interface stresses depends on the values of the vibration frequency of the external forces.

• 한국구조물진단유지관리공학회 논문집
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• 제13권1호통권53호
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• pp.125-134
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• 2009

이 논문은 직시각형 단면을 갖는 원호형 등단면 띠기초의 자유진동에 관한 연구이다. 띠기초를 지지하는 지반을 두 변수 탄성지반으로 모형화하였다. 두 변수 탄성지반으로 지지된 원호형 띠기초의 휨-비틀림 자유 진동을 지배하는 미분방정식을 유도하고 이를 수치해석하여 고유진동수 및 진동형을 산정하였다. 띠기초의 경계조건은 자유-자유로 하여 최저저차 4개의 고유진동수를 산정하였다. 수치해석의 결과로, 중심각, 깊이비, 접촉비, 탄성계수비, 지반변수 등 5개의 변수가 고유진동수에 미치는 영향을 보고하였다. 변위 및 합응력의 진동형을 그림으로 나타내었다. 실험을 통하여 이 연구의 결과를 검증하였다.

• 한국자동차공학회논문집
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• 제8권1호
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• pp.163-171
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• 2000

The aim this study is to provide fundamental informations for the development of magneticfluid damper. To achieve the aim. the damping effect of magneticfluid is investigated by experiments that the diameter of inner circular bar and the input amplitude vary in the magnetic field generated by the permanent magnet and the electromagnet. From the study, the following conclusive remarks can be made. As the diameter of inner circular bar and the input amplitude increase. the damping effect is improved. And we can know that as the contact area between inner circular bar and magneticfluid increases, damping ratio is improved. Also we consider the cases that there is magnetism generated by electromagnet and DC voltage is supplied to electromagnet from 10V to 50V by 10V. In these cases, the amplitude ratio decreases sharply from 1.8 1.0 And for these cases, the damping ratio is .745.

• 재활복지공학회논문지
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• 제9권3호
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• pp.231-236
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• 2015

본 연구에서는 재활운동기기에 적합한 운동부하 조절이 가능한 영구자석형 비 접촉식 원형 브라켓 맴돌이 전류 부하 제동장치를 제안하고 성능을 실험적으로 평가하였다. 제안한 원형 부하 제동장치의 토크 값은 고정 부하를 갖는 "ㄷ"형 부하 제동장치에 비해 49%의 제동력으로 평가되었지만 도전율 변화와 공극의 간격 변화로 다양한 부하 조절이 가능함을 확인하였다. 본 연구에서 제안된 부하 제동장치는 사용자의 상태에 따라 부하 조절이 가능하며 운동기기의 소형화 및 원가 절감 등의 장점을 갖는 운동기기 적용이 가능할 것으로 기대된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.290-293
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• 2003

Ohmic contact characteristics of Al ion implanted n-type SiC wafer were investigated. Al ions implanted with high dose to obtain the final concentration of $5{\times}10^{19}/cm^3$, then annealed at high temperature. Firstly, B ion ion implanted p-well region were formed which is needed for fabrication of SiC devices such as DIMOSFET and un diode. Secondly, Al implanted high dose region for ohmic contact were formed. After ion implantation, the samples were annealed at high temperature up to $1600^{\circ}C\;and\;1700^{\circ}C$ for 30 min in order to activate the implanted ions electrically. Both the inear TLM and circular TLM method were used for characterization. Ni/Ti metal layer was used for contact metal which is widely used in fabrication of ohmic contacts for n-type SiC. The metal layer was deposited by using RF sputtering and rapid thermal annealed at $950^{\circ}C$ for 90sec. Good ohmic contact characteristics could be obtained regardless of measuring methods. The measured specific contact resistivity for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$ were $1.8{\times}10^{-3}{\Omega}cm^2$, $5.6{\times}10^{-5}{\Omega}cm^2$, respectively. Using the same metal and same process of the ohmic contacts in n-type SiC, it is found possible to make a good ohmic contacts to p-type SiC. It is very helpful for fabricating a integrated SiC devices. In addition, we obtained that the ratio of the electrically activated ions to the implanted Al ions were 10% and 60% for the samples annealed at $1600^{\circ}C\;and\;1700^{\circ}C$, respectively.

• 한국전기전자재료학회논문지
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• 제18권5호
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• pp.389-395
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• 2005

The etching technology of the high aspect ratio contact(HARC) is necessary at the critical contact processes of semiconductor devices. Etching the $SiO_{2}$ contact hole with the sub-micron design rule in manufacturing VLSI devices, the unexpected phenomenon of 'profile tilting' or 'bottom distortion' is often observed. This makes a short circuit between neighboring contact holes, which causes to drop seriously the device yield. As the aspect ratio of contact holes increases, the high C/F ratio gases, $C_{4}F_{6}$, $C_{4}F_{8}$ and $C_{5}F_{8}$, become widely used in order to minimize the mask layer loss during the etching process. These gases provide abundant fluorocarbon polymer as well as high selectivity to the mask layer, and the polymer with high sticking yield accumulates at the top-wall of the contact hole. During the etch process, many electrons are accumulated around the asymmetric hole mouth to distort the electric field, and this distorts the ion trajectory arriving at the hole bottom. These ions with the distorted trajectory induce the deformation of the hole bottom, which is called 'profile tilting' or 'bottom distortion'. To prevent this phenomenon, three methods are suggested here. 1) Using lower C/F ratio gases, $CF_{4}$ or $C_{3}F_{8}$, the amount of the Polymer at the hole mouth is reduced to minimize the asymmetry of the hole top. 2) The number of the neighboring holes with equal distance is maximized to get the more symmetry of the oxygen distribution around the hole. 3) The dual frequency plasma source is used to release the excessive charge build-up at the hole mouth. From the suggested methods, we have obtained the nearly circular hole bottom, which Implies that the ion trajectory Incident on the hole bottom is symmetry.

• 소성∙가공
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• 제11권1호
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• pp.75-83
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• 2002

Recently, the hydroforming process is widely applied to the automotive industry and rapidly spreaded to other industries. In this paper, An implicit finite element formulation for simulating axisymmetric tube hydroforming processes is performed. In order to describe normal anisotropy of the tube, Hill's non-quadratic yield function is employed. The frictional contact between die and tube and the frictionless contact between tube and fluid are considered using the mesh-normal vectors computed from the finite element mesh of the tube. The complete set of the governing relations comprising equilibrium and interfacial equations is linearized for Newton-Raphson procedure. In order to verify the validity of the developed finite element formulation, the axisymmetric tube bulge test is simulated and the simulation results are compared with experimental measurements. In a simulation of stepped circular tube hydroforming processes, an optimal hydraulic pressure curve is pursued by considering simultaneously internal pressures and axial forces.