• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.75-81
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• 2015

In this paper, numerical analysis by finite element method and parameter design by the Taguchi method were used to reduce warpage of a two passive components embedded double side substrate for PoP(Package on Package). The effect of thickness of circuit layers (L1, L2) and thickness of solder resist (SR_top, SR_BTM) were analyzed with 4 variations and 3 levels(minimum, average and maximum thickness) to find optimized thickness conditions. Also, paste effect of solder resist on unit area of top surface was analyzed. Finally, experiments was carried out to prove numerical analysis and the Taguchi method. Based on the numerical and experimental results, it was known that circuit layer in ball side of substrate was the most severe determining deviation for reducing warpage. Buried circuit layer in chip side, solder resist and were insignificant effects on warpage relatively. However, warpage decreased as circuit layer in ball side thickness increased but effect of solder resist and circuit layer in chip side thickness were conversely.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.3 s.36
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• pp.243-251
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• 2005

The distribution of temperature of flip chipped device with peripheral solder bump array was measured with variables, such as the locations and geometries of heater, the size of device, the size of passivation opening. The highest temperature was measured with the larger device, $3.0(mm)\times3.0(mm)$, which has the smallest heater at the center of device and the circular passivation opening. For 2 (watts) power input, the device shows the highest temperature of about $110(^{\circ}C)$. In contrast, the smaller device, $1.5(mm)\times1.8(mm)$, shows that of $90(^{\circ}C)$. In addition to the size effect, the increase of passivation opening size decreased the maximum temperature by about $10(^{\circ}C)$. From the measurement, the temperature of device could be controlled with the size and geometry of heater, the size of device and the size and geometry of passivation opening.

• Journal of the Microelectronics and Packaging Society
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• v.17 no.2
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• pp.55-61
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• 2010

The device with tantalum silicide heater were bonded by Ag paste and Au SBB(Stud Bump Bonding) onto the Au coated substrate. The shear test after Au ABB and the thermal performance under current stressing were measured. The optimum condition of Au SBB was determined by fractured surface after die shear test and $350^{\circ}C$ for substrate, $250^{\circ}C$ for die during flip chip bonding with bonding load of about 300 g/bump. With applying 5W through heater on the device, the maximum temperature with Ag paste bonding was about $50^{\circ}C$. That with Au SBB on Au coated Si substrate showed $64^{\circ}C$. The difference of maximum temperatures is only $14^{\circ}C$, even though the difference of contact area between Ag paste bonding and Au SBB is by about 300 times and the simulation showed that the contact resistance might be one of the reasons.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.43-51
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• 2014

In 3-dimensional (3D) integrated package, thermal management is one of the critical issues due to the high heat flux generated by stacked multi-functional chips in miniature packages. In this study, we used numerical simulation method to analyze the thermal behaviors, and investigated the thermal issues of 3D package using TSV (through-silicon-via) technology for mobile application. The 3D integrated package consists of up to 8 TSV memory chips and one logic chip with a interposer which has regularly embedded TSVs. Thermal performances and characteristics of glass and silicon interposers were compared. Thermal characteristics of logic and memory chips are also investigated. The effects of numbers of the stacked chip, size of the interposer and TSV via on the thermal behavior of 3D package were investigated. Numerical analysis of the junction temperature, thermal resistance, and heat flux for 3D TSV package was performed under normal operating and high performance operation conditions, respectively. Based on the simulation results, we proposed an effective integration scheme of the memory and logic chips to minimize the temperature rise of the package. The results will be useful of design optimization and provide a thermal design guideline for reliable and high performance 3D TSV package.

• Journal of Korean Society of Occupational and Environmental Hygiene
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• v.26 no.1
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• pp.58-63
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• 2016

Objectives: One major limitation encountered in retrospective exposure assessment for epidemiological study is the lack of exposure records and information maintained by companies which if they existed would allow the estimation of past exposure to hazardous operations and agents. This study developed a job-specific questionnaire(JSQ) to estimate exposure profiles among semiconductor workers, including operation and job. Methods: This JSQ can be directly applied to workers who work or have worked in a wafer fabrication or a chip packaging and assembly facility. Results and Conclusions: We used this JSQ to obtain past exposure information from semiconductor workers via face-to-face investigation. Major contents include questions on the facilities, operations and jobs to which they have been exposed since they entered employment in the semiconductor industry. The total number of questions in the JSQ is 18. Responses to this JSQ can be used not only to estimate retrospective exposure to operations and jobs in the semiconductor industry, but also to associate with the risk of all causes of death and risk of disease, including cancer.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.1
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• pp.33-38
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• 2007

We studied a bonding at low temperature using polymer bump and Non-Conductive Adhesive (NCA), and studied the reliability of the polymer bump/Al pad joints. The polymer bumps were formed on oxidized Si substrates by photolithography process, and the thin film metals were formed on the polymer bumps using DC magnetron sputtering. The substrate used was AL metallized glass. The polymer bump and Al metallized glass substrates were joined together at $80^{\circ}C$ under various pressure. Two NCAs were applied during joining. Thermal cycling test ($0^{\circ}C-55^{\circ}C$, cycle/30 min) was carried out up to 2000 cycles to evaluate the reliability of the joints. The bondability was evaluated by measuring the contact resistance of the joints through the four point probe method, and the joints were observed by Scanning Electron Microscope (SEM). The contact resistance of the joints was $70-90m{\Omega}$ before the reliability test. The joints of the polymer bump/Al pad were damaged by NCA filler particles under pressure above 200 MPa. After reliability test, some joints were electrically failed since thinner metal layers deposited at the edge of bumps were disconnected.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.3
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• pp.31-35
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• 2013

TSOP(Thin Small Outline Package) is the IC package using lead frame, which is the type of low cost package for white electronics, auto mobile, desktop PC, and so on. Its performance is not excellent compared to BGA or flip-chip CSP, but it has been used mostly because of low price of TSOP package. However, it has been issued in TSOP package that thermal deflection of lead frame occurs frequently during molding process and Au wire between semiconductor die and pad is debonded. It has been required to solve this problem through substituting materials with low CTE and improving structure of lead frame. We focused on developing the lead frame structure having thermal stability, which was carried out by numerical analysis in this study. Thermal deflection of lead frame in TSOP package was simulated with positions of anti-deflection adhesives, which was ranging 198 um~366 um from semiconductor die. It was definitely understood that thermal deflection of TSOP package with anti-deflection adhesives was improved as 30.738 um in the case of inside(198 um), which was compared to that of the conventional TSOP package. This result is caused by that the anti-deflection adhesives is contributed to restrict thermal expansion of lead frame. Therefore, it is expected that the anti-deflection adhesives can be applied to lead frame packages and enhance their thermal deflection without any change of substitutive materials with low CTE.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.1
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• pp.35-38
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• 2015

LEDs are considered to be an alternative for enhancement of energy efficiency, applied for numerous areas such as display, automotive headlight not only lights. Yellow phosphor is generally utilized with blue LEDs to generate WLED, $Y_3Al_{5}O_{12}:Ce^{3+}$ is typically used as the yellow phosphor. The phosphor, mixed with epoxy resin, has been used by being spread and hardened on the blue LED chip. This paste-based packaging gives rise to problems of degradation of phosphor by heat and decrease of luminous efficiency. Although phosphor plate is used instead of the epoxy-phosphor mixture to solve these problems, loss of luminous efficacy by total internal reflection inside the plate also should be solved. In this study, we coated the side of the plate with silver as one of the solution.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.401-407
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• 2014

There are increasing interests in COB (Chip On Board) that densely arranged many LED chips on one board in order to solve the heat issue. There are many problems being on the rise: the lifespan decreases as the temperature of LED devices increases; Red Shift phenomenon, in which wave length of spectral line moves from original wave length to long wave length, occurs; and optical power decreases as $T_j$ increases. In order to resolve such problems, this study selected the optimum thickness and length of Fin, planned the second Heat sink that is optimum for COB LED with 15W, and analyzed thermal mode by Solid Works Flow Simulation through 15W COB packaging with the planned Heat sink. 15W COB down-light Heat sink that is produced based on this analysis was utilized to analyze thermal mode through contact thermometer and electrical properties through Kelthley 2430.