• 한국자기학회지
• /
• 제7권1호
• /
• pp.19-24
• /
• 1997

적층형 chip inductor 소재인 NiCuZn ferrite의 제조 공정 조건 및 조성을 선정하였다. NiCuZn ferrite의 NiO 함량이 증가할 수록 저온 소결에 필요한 Fe$_{2}$O$_{3}$ 결핍량은 점차 증가하였고, NiO 함량과 Co$_{3}$O$_{4}$ 첨가량을 변화하여 투자율을 12 ~ 562 범위에서 제어할 수 있었다. NiCuZn ferrite의 투자율이 562에서 60으로 변화함에 따라서 Q$_{max}$ 주파수는 3 MHz에서 50 MHz 범위로 제어할 수 있었다. 이때 Q$_{max}$ 주파수(Y)와 투자율(X)은 log Y = 4.2-1.4 log X의 상관관계를 나타내었다.

• JSTS:Journal of Semiconductor Technology and Science
• /
• 제15권2호
• /
• pp.301-306
• /
• 2015

An ultra-compact and wideband low noise amplifier (LNA) in a quad flat non-leaded (QFN) package is presented. The LNA monolithic microwave integrated circuit (MMIC) is implemented in a $0.25{\mu}m$ GaN IC technology on a Silicon Carbide (SiC) substrate provided by Triquint. A source degeneration inductor and a gate inductor are used to obtain the noise and input matching simultaneously. The resistive feedback and inductor peaking techniques are employed to achieve a wideband characteristic. The LNA chip is mounted in the $3{\times}3-mm^2$ QFN package and measured. The supply voltages for the first and second stages are 14 V and 7 V, respectively, and the total current is 70 mA. The highest gain is 13.5 dB around the mid-band, and -3 dB frequencies are observed at 0.7 and 12 GHz. Input and output return losses ($S_{11}$ and $S_{22}$) of less than -10 dB measure from 1 to 12 GHz; there is an absolute bandwidth of 11 GHz and a fractional bandwidth of 169%. Across the bandwidth, the noise figures (NFs) are between 3 and 5 dB, while the output-referred third-order intercept points (OIP3s) are between 26 and 28 dBm. The overall chip size with all bonding pads is $1.1{\times}0.9mm^2$. To the best of our knowledge, this LNA shows the best figure-of-merit (FoM) compared with other published GaN LNAs with the same gate length.

• 전기학회논문지
• /
• 제56권11호
• /
• pp.1967-1971
• /
• 2007

In this paper, we verified basic forms and equivalent circuits of spiral inductors and various kinds of parasitics of equivalent circuits by using HFSS and Nexxim program that were 3-D EM analysis tools, and fabrication on-chip spiral inductors using Hynix's 0.25um 1-poly and 5-metal CMOS process. Comparing with PGS(patterned ground shield) and NPGS(non patterned ground shield) of spiral inductors of 3.5 turn, 4.5 turn and 5.5 turn, etc, the application of PGS could improve maximum Q value by 8-12%.

• 대한전자공학회논문지SD
• /
• 제46권6호
• /
• pp.16-24
• /
• 2009

본 논문에서는 인덕터와 커패시터를 집적화한 DC-DC 벅 변환기를 설계하였다. 출력전압의 리플크기를 줄이기 위해 stacked interleaved 방식을 이용하였고 변환기의 제어부는 전압모드 방식의 제어방법을 사용하여 설계하였다. 설계한 DC-DC 벅 변환기는 표준 $0.5{\mu}m$ CMOS 공정으로 제작 중이며 전체면적은 $9mm^2$이다. 설계된 회로는 $3V{\sim}5V$의 입력전압에서 동작하며 LC 필터의 크기를 줄이기 위해 50MHz의 주파수로 동작하였다. 최대 250mA의 부하전류 구동이 가능하며 최대 71%의 전력변환 효율을 가졌다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2004년도 하계종합학술대회 논문집(1)
• /
• pp.213-216
• /
• 2004

This paper describes design and implementation of the 5.5 GHz VCO with parallel-branch inductors using 0.8${\mu}m$ SiGe HBT process technology. The proposed parallel-branch inductor shows $12 \%$ improvement in quality factor in comparison with the conventional inductor. A phase noise of -93 dBc/Hz is measured at 100 kHz offset frequency, and the harmonics in the VCO are suppressed less than -23 dBc. The single-sided output power of the VCO is -6.5$\pm$1.5 dBm. The manufactured VCO consumes 15.0 mA with 2.5 V supply voltage. Its chip areas are 1.8mm ${\times}$ 1.2mm.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제5C권4호
• /
• pp.176-179
• /
• 2005

The increasing demand for high density packaging technologies and the evolution to mixed digital and analogue devices has been the con-set of increasing research in thin film multi-layer technologies such as the passive components integration technology. In this paper, Cu and TaO thin film with RF sputtering was deposited for spiral inductor and MOM capacitor on the $SiO_2$/Si(100) substrate. MOM capacitor and spiral inductor were fabricated for L-C band pass filter by sputtering and lift-off. We are analyzed and designed thin films L-C passive components for band pass filter at 900 MHz and 1.8 GHz, important devices for mobile communication system. Based on the high-Q values of passive components, MOM capacitor and spiral inductors for L-C band pass filter, a low insertion loss of L-C passive components can be realized with a minimized chip area. The insertion loss was 3 dB for a 1.8 GHz filter, and 5 dB for a 900 MHz filter. This paper also discusses a analysis and practical design to thin-film L-C band pass filter.

• 한국전기전자재료학회논문지
• /
• 제22권10호
• /
• pp.826-831
• /
• 2009

In this paper, a high power RF amplifier module using AlN substrate of high thermal conductivity has been proposed. This RF amplifier module has the advantage of compact size and effective heat dissipation for the packaging of high power chip. To fabricate the thru-hole and scribing line on AlN substrate, the key parameters of $CO_2$ laser were experimented. And then, microstrip lines and spiral planar inductors were fabricated on an AlN substrate using the thin-film process. The fabricated microstrip lines on the AlN substrate has an attenuation value of 0.1 dB/mm up to 10 GHz. The fabricated spiral planar inductor has a high quality factor, a maximum of about 62 at 1 GHz for a 5.65 nH inductor. Packaging of a RF power amplifier was implemented on an AlN substrate with thru-hole. From the measured results, the gain is 24 dB from 13 to 15 GHz and the output power is 33.65 dBm(2.3 W).

• 대한전자공학회논문지SD
• /
• 제48권7호
• /
• pp.17-22
• /
• 2011

본 논문에서는 인덕티브 커플링 송수신 회로를 위한 효과 적인 신호 전달 기법을 제안하기 위하여 인덕티브 커플링 채널과 기존의 신호 전달 기법들을 분석 하였다. 신호 전달 기법을 공정히 비교하기 위하여 새로운 성능 비교 지수를 소개하고 이를 토대로 비교 결과를 산출할 시 NRZ 신호 전달 기법이 기존에 제안 되었던 BPM 신호 전달 기법보다 더 우수함을 나타내었다. 모의실험은 CMOS 0.13${\mu}m$ 공정을 이용하여 송수신 회로를 설계하였으며 인덕터는 칩 내 spiral 인덕터를 가정하여 모델링 하였다.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2005년도 추계종합학술대회
• /
• pp.785-788
• /
• 2005

In this study, micro-scale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was $1.0{\times}0.5{\times}0.5mm^3$ The material and shape of the core were 96% $Al_2O_3$ and I-type. The material and number of turn of coil were copper (Cu) and 6. The diameter ($40{\mu}m$) of coil and length (0.35mm) of solenoid were determined by a Maxwell three-dimensional field simulator to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 at 250MHz, and show results comparable to those measured for the inductors prepared by CoilCraftTm that is one of the best chip inductor company in the world. The simulated data predicted the high-frequency data of the Land Q of the inductors developed well.

• 대한전기학회논문지:전기물성ㆍ응용부문C
• /
• 제52권11호
• /
• pp.501-507
• /
• 2003

In this study, microscale, high-performance, solenoid-type RF chip inductors were investigated. The size of the RF chip inductors fabricated in this work was 1.0${\times}$0.5${\times}$0.5㎣. 96% $Al_2$ $O_3$and I-type were used as the material and shape of the core, respectively. The copper (Cu) wire with 6 turns was employed as the coils. The diameter (40${\mu}{\textrm}{m}$) and position (middle) of the coil and the length (0.35mm) of solenoid were determined by a high-frequency structure simulator (HFSS) to maximize the performance of the inductors. High frequency characteristics of the inductance (L) and quality-factor (Q) of developed inductors were measured using an RF Impedance/Material Analyzer (HP4291B with HP16193A test fixture). The inductors developed have inductances of 10.8nH and quality factors of 25.2 to 50 over the frequency ranges of 250MHz to l GHz, and show results comparable to those measured for the inductors prepared by CoilCraf $t^{Tm}$ . The simulated data predicted the high-frequency data of the L and Q of the inductors developed well.l.