• Proceedings of the KIEE Conference
• /
• 2003.07c
• /
• pp.1574-1576
• /
• 2003

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at $600^{\circ}C$ using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V/pm and 1.9V/pm respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as $11.67mA/cm^2$ at $5.5V/{\mu}m$ and $1.5mA/cm^2$ at $5.5V/{\mu}m$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.06a
• /
• pp.178-178
• /
• 2007

II-VI의 넓은 밴드갭 (3.37 eV)을 가지는 ZnO는 solar cells, transparent conductive electrodes, ultraviolet light emitters, and chemical sensors 등에 응용되고 있다. 특히 고효율 ZnO계 발광 소자 구현을 위하여 MgO (7.7eV), CdO (2.0eV) 등의 고용을 통한 밴드갭을 엔지니어링 하며, 단파장 영역의 광원을 확보하기 위하여 MgO 첨가를 통한 밴드갭 에너지를 증가시키는 방향으로의 연구가 활발하다. 그러나 ZnO의 wurtzite 구조와 MgO의 rocksalt 구조의 상이한 결정구조로 인하여 Mg의 고용한계는 4 at. %, 4.1 eV 알려져 있다. 본 실험에서는 p-type Si (100), c-sapphire (0002)과 GaN 기판 위에 MgO (99.999 %)와 ZnO (99.999 %) 두가지 타겟을 사용하여 RF co-스퍼터링법으로 ZnMgO 박막을 증착 하였다. 이때 ZnO 타겟의 power 밀도는 고정 시키고 MgO 타겟의 power 밀도를 변화 시키며 Mg의 함량을 조절하여 그에 따른 광학적 구조적 특성의 변화를 연구 하였다. 성장된 ZnMgO 박막은 MgO 타겟의 power 밀도가 증가할 때 Mg의 함량이 10 at. %까지 증가 하며, 그에 따른 표면의 거칠기 및 입계 크기가 감소하며, 박막의 성장속도 또한 감소함을 SEM과 AFM을 통하여 알 수 있었다. XRD를 동하여 ZnMgO 박막의 (0002) peak의 위치는 $34.50^{\circ}{\sim}34.7^{\circ}$로 오른쪽으로 이동하며, c-축으로 성장하였음을 알 수 있다. PL과 UV룰 동하여, Mg의 함량이 증가 할수록 박막의 밴드갭 에너지는 3.2 eV에서 4.1 eV 로 증가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.20 no.7
• /
• pp.600-605
• /
• 2007

Process variables for manufacturing the $CuInSe_2$ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions (substrate temperature, sputtering pressure, DC/RF Power), and then by changing a number of vapor deposition conditions and Annealing conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were vapor-deposited in the named order. Among them, Cu and In were vapor-deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1 : 1, while the surface temperature having an effect on the quality of the thin film was changed from $100^{\circ}C\;to\;300^{\circ}C$ at intervals of $50^{\circ}C$. The diffract fringe of X-ray, which depended upon the substrate temperature and the Annealing temperature of the manufactured $CuInSe_2$ thin film, was investigated. scanning electron microgaphs of represents a case that a sample manufactured at the substrate temperature of $100^{\circ}C$ was thermally treated at $200{\times}350^{\circ}C$. As a result, at $500^{\circ}C$ of the Annealing temperature, their chemical composition was measured in the proportion of 1 : 1 : 2. It could be known that under this condition, the most excellent thin film was formed, compared with the other conditions.

• Journal of the Korean Vacuum Society
• /
• v.20 no.3
• /
• pp.182-188
• /
• 2011

Polysilazane and polymethylsilazane based precursor films were deposited on Si-substrate by spin-coating, subsequently annealed at $150{\sim}850^{\circ}C$, and characterized. Structural analysis, shrink, compositional change, etch rate, and gap-filling were observed. Annealing the precursor films led to formation of spin-on dielectric films. C-containing precursor films showed that less loss of N, H, and C while less gain of O than that of C-free precursor films at $400^{\circ}C$, but more loss of N, H, and C while more gain of O at $850^{\circ}C$. Thus polysilazane based precursor films exhibited less reduction in thickness of 14.5% than silazane based one of 15.6% at $400^{\circ}C$ but more 37.4% than 19.4% at $850^{\circ}C$. FTIR indicated that C induced smaller amount of Si-O bond, non-uniform property, and lower resistance to chemical etching.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.203.1-203.1
• /
• 2013

Zinc oxide (ZnO) nanocrystalline thin films on various growth temperatures for active layer and different buffer layer thickness were grown by plasma-assisted molecular beam epitaxy (PA-MBE) on Si substrates. The ZnO active layer were grown with various growth temperature from 500 to $800^{\circ}C$ and the ZnO buffer layer were grown for different time from 5 to 40 minutes. To investigate the structural and optical properties of the ZnO thin films, scanning electron microscope (SEM), X-ray diffractometer (XRD), and photoluminescence (PL) spectroscopy were used, respectively. In the SEM images, the ZnO thin films have high densification of grains and good roughness and uniformity at $800^{\circ}C$ for active layer growth temperature and 20 minutes for buffer layer growth time, respectively. The PL spectra of ZnO buffer layers and active layers display sharp near band edge (NBE) emissions in UV range and broad deep level emissions (DLE) in visible range. The intensity of NBE peaks for the ZnO thin films significantly increase with increase in the active layer growth temperature. In addition, the NBE peak at 20 minutes for buffer layer growth time has the largest emission intensity and the intensity of DLE peaks decrease with increase in the growth time.

• ALGAE
• /
• v.32 no.1
• /
• pp.75-86
• /
• 2017

Polysaccharides of marine algae exhibit different structural characteristics and interesting biological functions. In this study, crude polysaccharides (CP) of eleven Sri Lankan marine algae obtained through hot water extraction and ethanol precipitation were investigated for DPPH, alkyl, and hydroxyl radical scavenging activities using electron spin resonance spectrometry and for intracellular reactive oxygen species scavenging activity in the Chang liver cell line. Characterization of CPs was done by Fourier transform infrared (FTIR) spectroscopy and by analysis of the monosaccharide composition. Time-dependent density functional theory quantum-chemical calculations at the RB3LYP/6-31G(d,p) level for constructed dimeric units of the corresponding polysaccharides were used to resolve the FTIR spectra. CPs from Chnoospora minima showed the highest DPPH and alkyl radical scavenging activities and higher intracellular reactive oxygen species scavenging effects for both AAPH and $H_2O_2$ induced ROS production in "Chang" cells. The major polysaccharide constituent in C. minima CP was identified as fucoidan and it displayed a higher sulfate content. The degree of sulfation of these polysaccharides suggests a positive correlation with the observed antioxidant properties.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.16 no.3
• /
• pp.598-607
• /
• 1992

The environment degradation of structural steel under high temperature is one of the key phenomena governing the availability and life of plant. This degradation resulted from the microstructural changes due to the long exposure at high temperature affect the mechanical properties such as creep strength and toughness. For instance, boiler tube materials usually tend to degrade, after long term operation, by precipitates, spherodizing, coarsening, and change in chemical composition of carbides. In this study, the material degradation under high temperature exposure was investigated by evaluating the carbide precipitation. The electrochemical polarization method was facilitated to investigate the precipitation and coarsening of carbides. It was shown by the modified electrochemical potentiokinetic reactivation (EPR) tests that the passivation of Mo-rich carbides did not occur even in the anodic peak current (Ip) which indicates the precipitation of Mo$_{6}$C was also observed. And it was assured that special electrolytic cell assembled in this research can be used for the detection of Mo$_{6}$C precipitation in the field.eld.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.32 no.5
• /
• pp.376-381
• /
• 2019

In this work, we evaluated the structural, electrical and optical properties of $Ge_8Sb_2Te_{11}$ and Cu-doped $Ge_8Sb_2Te_{11}$ thin films prepared by rf-magnetron reactive sputtering. The 200-nm-thick deposited films were annealed in a range of $100{\sim}400^{\circ}C$ using a furnace in an $N_2$ atmosphere. The amorphous-to-crystalline phase changes of the thin films were investigated by X-ray diffraction (XRD), UV-Vis-IR spectrophotometry, a 4-point probe, and a source meter. A one-step phase transformation from amorphous to face-centered-cubic (fcc) and an increase of the crystallization temperature ($T_c$) was observed in the Cu-doped film, which indicates an enhanced thermal stability in the amorphous state. The difference in the optical energy band gap ($E_{op}$) between the amorphous and crystalline phases was relatively large, approximately 0.38~0.41 eV, which is beneficial for reducing the noise in the memory devices. The sheet resistance($R_s$) of the amorphous phase in the Cu-doped film was about 1.5 orders larger than that in undoped film. A large $R_s$ in the amorphous phase will reduce the programming current in the memory device. An increase of threshold voltage ($V_{th}$) was seen in the Cu-doped film, which implied a high thermal efficiency. This suggests that the Cu-doped $Ge_8Sb_2Te_{11}$ thin film is a good candidate for PRAM.

• Journal of the Microelectronics and Packaging Society
• /
• v.26 no.1
• /
• pp.23-28
• /
• 2019

The Titanium oxide ($TiO_2$) is an attractive ceramic material which shows non-toxic, high refractive index, catalytic activity and biocompatibility, and can be fabricated at a low cost due to its high chemical stability and large anisotropy. $TiO_2$ nanoparticles have been prepared by sol-gel method. The pH of solution can affect the $TiO_2$ crystallinity during the formation of nanoparticles. The prepared nanoparticles were characterized using Fourier transform infrared spectroscopy, scanning electron microscopy, X-ray diffraction, photoluminescence spectroscopy in order to investigate their structural and photoluminescence properties. Through these analysis, the size of $TiO_2$ nanoparticles were found to be smaller than 5 nm. As the crystallinity of the nanoparticles increased, the emission of PL in the 550 nm region increased. Therefore, luminescence characteristics can be improved by controlling the crystallinity of the $TiO_2$ nanoparticles.

• The Journal of the Convergence on Culture Technology
• /
• v.7 no.2
• /
• pp.389-394
• /
• 2021

In this work, we study the properties of molecular structure and boundary orbital functions of the DPHMP-AlH and propiophenone and butyrophenone, which are forms of alkoxy-amine-aluminum derivatives. Furthermore, we investigate the effect on the selective reduction of the final products (R), (S)-phenylpropanol and (R), (S)-phenylbutanol by calculating the stereoscopic and thermodynamic parameters of the transition state. Considering the three-dimensional molecular structural stability, the transition status of (S) types DPHMP-AlH and alkylphenone was found to be more stable, resulting in the selective reductions of DPHM-AlH and alkylphenone from this result: (S)-(1)-phenylpropanol and (S)-(1)-phenylbutanol was confirmed that the formation was advantageous.