• Title/Summary/Keyword: Chemical buffer

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Determination of Pd(II) and Pt(II) Metal Cyano Complexes Using Capillary Electrophoresis

  • Lee, Hue-Jin;Lee, Sang-Ho;Chung, Koo-Soon;Lee, Kwang-Woo
    • Bulletin of the Korean Chemical Society
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    • v.15 no.11
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    • pp.945-949
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    • 1994
  • Mixtures of cyano complexes of palladium(II) and platinum(II) were separated by capillary electrophoresis using a fused silica capillary as a separation column and 30 mM phosphate buffer (pH 7) containing 15 wt. % acetonitrile as a running buffer. By virtue of the high ionic mobilities of the negatively charged cyano complexes of Pd(II) and Pt(II), they were separated using a cathodic injection and anodic detection scheme. The metal complexes eluted through the capillary were detected by direct UV absorption at 214 nm. A linear relationship between peak area and concentration was obtained for both ions and the detection limit was lower than $10^{-14}$ mole. The proposed method was applied to real sample, e.g., anode slime obtained from an electrolytic copper refinary, as a method for the simultaneous determination of palladium and platinum.

Passive Films on Chromium Studied by Three-parameter Ellipsometry

  • 이경희;백운기
    • Bulletin of the Korean Chemical Society
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    • v.16 no.3
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    • pp.214-216
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    • 1995
  • Passive films formed on chromium surface in citrate buffer solution were investigated by means of three-parameter ellipsometry. The citrate buffer was found to be a suitable medium in which oxide film on chromium could be removed by cathodic treatment, providing a reference surface for the optical study. The passive film effectively protecting the chromium surface from corrosion was found to have thicknesses in the range 0.65 to 1.25 nm depending on the potential in the range of -0.20 to 0.60 V (0.1M KCl calomel electrode). The complex refractive index of the passive film did not show significant potential-dependent changes, indicating that the composition of the film material does not depend on potential.

The Pressure Effect on the Ionization of m-Chloroanilinium Ion in Sodiumacetate Buffer Solution

  • Jee ,Jong-Gi;Lee, Young-Hwa;Kwak, Young-Jik
    • Bulletin of the Korean Chemical Society
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    • v.6 no.5
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    • pp.266-269
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    • 1985
  • The dissociation constants(K) of m-chloroanilinium ion in water-ethanol mixture, where the volume percentage of water is 89.5%, were evaluated by UV-spectroscopic method at $20{\sim}50^{\circ}C$, up to 1500 bars with changing ionic strength from 0.04 to 0.10 mol $kg^{-1}$ by use of acetate buffer. K values enhance with increasing ionic strength and temperature, but decrease with elevating pressure. From K values, we obtained the partial molar volume change and some other thermodynamic parameters. From the values of enthalpy, entropy and isoequilibrium temperature (649 K), we concluded that the dissociation of m-chloroanilinium ion mentioned above is controlled by enthalpy.

$MgB_2$ Thin Films on SiC Buffer Layers with Enhanced Critical Current Density at High Magnetic Fields

  • Putri, W.B.K.;Tran, D.H.;Kang, B.;Lee, N.H.;Kang, W.N.
    • Progress in Superconductivity
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    • v.14 no.1
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    • pp.30-33
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    • 2012
  • We have grown $MgB_2$ superconducting thin films on the SiC buffer layers by means of hybrid physical-chemical vapor deposition (HPCVD) technique. Prior to that, SiC was first deposited on $Al_2O_3$ substrates at various temperatures from room temperature to $600^{\circ}C$ by using the pulsed laser deposition (PLD) method in a vacuum atmosphere of ${\sim}10^{-6}$ Torr pressure. All samples showed a high transition temperature of ~40 K. The grain boundaries of $MgB_2$ samples with SiC layer are greater in amount, compare to that of the pure $MgB_2$ samples. $MgB_2$ with SiC buffer layer samples show interesting change in the critical current density ($J_c$) values. Generally, at both 5 K and 20 K measurements, at lower magnetic field, all $MgB_2$ films deposited on SiC buffer layers have low $J_c$ values, but when they reach higher magnetic fields of nearly 3.5 Tesla, $J_c$ values are enhanced. $MgB_2$ film with SiC grown at $600^{\circ}C$ has the highest $J_c$ enhancement at higher magnetic fields, while all SiC buffer layer samples exhibit higher $J_c$ values than that of the pure $MgB_2$ films. A change in the grain boundary morphologies of $MgB_2$ films due to SiC buffer layer seems to be responsible for $J_c$ enhancements at high magnetic fields.

Enhanced Proteomic Analysis of Streptomyces peucetius Cytosolic Protein Using Optimized Protein Solubilization Protocol

  • Lee, Kwang-Won;Song, Eun-Jung;Kim, June-Hyung;Lee, Hei-Chan;Liou, Kwang-Kyoung;Sohng, Jae-Kyung;Kim, Byung-Gee
    • Journal of Microbiology and Biotechnology
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    • v.17 no.1
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    • pp.89-95
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    • 2007
  • Improvements in the dissolution of proteins in two-dimensional gel electrophoresis have greatly advanced the ability to analyze the proteomes of microorganisms under a wide variety of physiological conditions. This study examined the effect of various combinations of chaotropic agents, a reducing agent, and a detergent on the dissolution of the Streptomyces peucetius cytosolic proteins. The use of urea alone in a rehydration buffer as a chaotropic agent gave the proteome a higher solubility than any of the urea and thiourea combinations, and produced the highest resolution and clearest background in two-dimensional gel electrophoresis. Two % CHAPS, as a detergent in a rehydration buffer, improved the protein solubility. After examining the effect of several concentrations of reducing agent, 50 mM DTT in a rehydration buffer was found to be an optimal condition for the proteome analysis of Streptomyces. Using this optimized buffer condition, more than 2,000 distinct and differentially expressed soluble proteins could be resolved using two-dimensional gel electrophoresis with a pI ranging from 4-7. Under this optimized condition, 15 novel small proteins with low-level expression, which could not be analyzed under the non-optimized conditions, were identified. Overall, the optimized condition helped produce a better reference gel for Streptomyces peucetius.

Effect of Complex Agent NH3 Concentration on the Chemically Deposited Zn Compound Thin Film on the $Cu(In,Ga)Se_2$

  • Shin, Dong-Hyeop;Larina, Liudmila;Yun, Jae-Ho;Ahn, Byung-Tae;Park, Hi-Sun
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.35.1-35.1
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    • 2010
  • The Cu(In,Ga)Se2(CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, many groups made hard efforts to overcome its disadvantages in terms of high absorption of short wavelength, Cd hazardous element. Among Cd-free candidate materials, the CIGS thin film solar cells with Zn compound buffer layer seem to be promising with 15.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, few groups were successful to report high-efficiency CIGS solar cells with Zn compound buffer layer, compared to be known how to fabricate these solar cells. Each group's chemical bah deposition (CBD) condition is seriously different. It may mean that it is not fully understood to grow high quality Zn compound thin film on the CIGS using CBD. In this study, we focused to clarify growth mechanism of chemically deposited Zn compound thin film on the CIGS, especially. Additionally, we tried to characterize junction properties with unfavorable issues, that is, slow growth rate, imperfect film coverage and minimize these issues. Early works reported that film deposition rate increased with reagent concentration and film covered whole rough CIGS surface. But they did not mention well how film growth of zinc compound evolves homogeneously or heterogeneously and what kinds of defects exist within film that can cause low solar performance. We observed sufficient correlation between growth quality and concentration of NH3 as complex agent. When NH3 concentration increased, thickness of zinc compound increased with dominant heterogeneous growth for high quality film. But the large amounts of NH3 in the solution made many particles of zinc hydroxide due to hydroxide ions. The zinc hydroxides bonded weakly to the CIGS surface have been removed at rinsing after CBD.

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Tungsten oxide interlayer for hole injection in inverted organic light-emitting devices

  • Kim, Yun-Hak;Park, Sun-Mi;Gwon, Sun-Nam;Kim, Jeong-Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.380-380
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    • 2010
  • Currently, organic light-emitting diodes (OLEDs) have been proven of their readiness for commercialization in terms of lifetime and efficiency. In accordance with emerging new technologies, enhancement of light efficiency and extension of application fields are required. Particularly inverted structures, in which electron injection occurs at bottom and hole injection on top, show crucial advantages due to their easy integration with Si-based driving circuits for active matrix OLED as well as large open area for brighter illumination. In order to get better performance and process reliability, usually a proper buffer layer for carrier injection is needed. In inverted top emission OLED, the buffer layer should protect underlying organic materials against destructive particles during the electrode deposition, in addition to increasing their efficiency by reducing carrier injection barrier. For hole injection layers, there are several requirements for the buffer layer, such as high transparency, high work function, and reasonable electrical conductivity. As a buffer material, a few kinds of transition metal oxides for inverted OLED applications have been successfully utilized aiming at efficient hole injection properties. Among them, we chose 2 nm of $WO_3$ between NPB [N,N'-bis(1-naphthyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine] and Au (or Al) films. The interfacial energy-level alignment and chemical reaction as a function of film coverage have been measured by using in-situ ultraviolet and X-ray photoelectron spectroscopy. It turned out that the $WO_3$ interlayer substantially reduces the hole injection barrier irrespective of the kind of electrode metals. It also avoids direct chemical interaction between NPB and metal atoms. This observation clearly validates the use of $WO_3$ interlayer as hole injection for inverted OLED applications.

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