• Biotechnology and Bioprocess Engineering:BBE
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• 제11권5호
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• pp.432-441
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• 2006

2D fluorescence sensors produce a great deal of spectral data during fermentation processes, which can be analyzed using a variety of statistical techniques. Principal component analysis (PCA) and a self-organizing map (SOM) were used to analyze these 2D fluorescence spectra and to extract useful information from them. PCA resulted in scores and loadings that were visualized in the score-loading plots and used to monitor various fermentation processes with recombinant Escherichia coli and Saccharomyces cerevisiae. The SOM was found to be a useful and interpretative method of classifying the entire gamut of 2D fluorescence spectra and of selecting some significant combinations of excitation and emission wavelengths. The results, including the normalized weights and variances, indicated that the SOM network is capable of being used to interpret the fermentation processes monitored by a 2D fluorescence sensor.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1581-1583
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• 2002

본 논문은 다공질 실리콘 다이어프램에 대한 화학 센서의 일종인 습도, 에탄올, 메탄올의 감지 특성을 측정하고 전기 전도도의 변화를 고찰하였다. 먼저, TMAH 용액으로 실리콘 다이어프램을 제작한 후, HF와 에탄올의 혼합 용액내에서 일정 전압을 인가하여 다공질 실리콘 다이어프램을 형성하였다. 다공질 실리콘을 면(100)에 수직한 방향으로 $50{\sim}100{\mu}m$ 두께로 균일하게 형성하여 p+-PSi-n+ 구조의 소자를 제작하였다. 다공질 실리콘 다이어프램의 절대습도에 대한 감도는 입력 주파수 5kHz에서 인가 전압이 $2{\sim}6$Vpp에서 $376.3{\sim}784.8{\Omega}$/%RH으로 변하였다. 또, 인가 전압 6Vpp에서 입력 주파수가 $2{\sim}5$kHz으로 변할 때 $393.3{\sim}784.8{\Omega}$/%RH으로 변하였다. 또한, 에탄올에 대한 감도는 $0.068{\mu}A$/%이며, 메탄올은 $0.212{\mu}A$/%으로 다공질 실리콘 다이어프램은 에탄올 보다 메탄올이 더 민감하게 반응하였다. 일반적으로 다공질 실리콘의 전기전도도는 charged surface traps과 screening effect에 의존한다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1997-1999
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• 2002

고분자 주쇄(Main chain)의 소수성을 가지는 플루오르 그룹을 배제시킨 습도 민감성 폴리이미드를 합성 및 이미드화 하였고, 이를 이용한 초고참도 습도 센서를 제작 및 측정하였다. 사용된 폴리이미드는 다이아민계로 Oxydianyline(ODA)와 다이안하이드라이드계로 Pyromellitic dianhydried(PMDA)를 유기용매 Dimethyla cetamide(DMAc) 하에서 폴리이미드 전구체 (Polyamic acid)를 합성하였으며, 진공 및 승온 조건에서 유기용매를 제거하여 이미드화(Imidization) 반응을 진행시켜 제조하였다. 본 습도 센서는 정전용량형 고감도 습도 센서로 디자인되었으며 실리콘 웨이퍼상에서 일반적인 반도체 공정을 이용하여 구현하였다. 본 습도 센서는 센서 크기와 유효면적, 감습층의 두께를 주요 변수로 설정하였으며 이에 따른 습도 민감성 효과를 평가 및 분석하였다. 측정 결과 유효면적 70%, 감습층 두께 $1.1{\mu}m$ 로 제작된 습도 센서는 상대숨도$20%{\sim}90%$ 영역에서 캐패시턴스와 선형적 상관관계를 보여주고 있으며, 습도 민감도는 3.9 pF/%RH 클 얻을 수 있었다.

• 센서학회지
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• 제21권1호
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• pp.53-58
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• 2012

Biological and chemical assays(e.g., clinical tests for medical diagnosis) are needed to handle small liquid volume with high accuracy and high reliability. Many micro-dispensing systems using various actuation methods have been developed and applied. In this research, we confirm repeatability of the cartridge-type dispensing system with various measuring methods for guarantee of an acceptable reliability. We systematically examine the dispensed volume variation and dispense rate during 500,000 shots of sequential actuation. Using the same method, we confirm the repeatability of dispensed volume while varying operating conditions and design parameter(i.e., outlet size) of the dispensing system. Also, we examine the consistency of the dispensed volume of droplet while varying the operating pressures. Furthermore, we repeatedly measure differences between an actual dispensed volume and a target volume. According to our results, it is expected that the stable and reliable performance of our dispensing system can effectively be used in various applications containing bio-solutions.

• 센서학회지
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• 제18권2호
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• pp.147-153
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• 2009

A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located $50{\mu}m$ from the heater and has a sensitivity of $0.73{\Omega}$/sccm with ${\sim}15\;ms$ rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of $-1.24{\times}10^{-3}/^{\circ}C$ from room temperature to $100^{\circ}C$.

• 센서학회지
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• 제18권4호
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• pp.307-310
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS(Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 $\sim$ 90 nm was achieved at 7.1 mA/cm$^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 cm$^{-1}$. PL shows the band gap enegry of thin film(2.5 eV) and porous 3C-SiC(2.7 eV).

• 센서학회지
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• 제21권3호
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• pp.217-222
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• 2012

Optical coherence tomography(OCT) is a noninvasive optical imaging tool for biomedical applications. OCT can provide depth resolved two/three dimensional morphological images on biological samples. In this paper, we integrated an OCT system that was composed of an SLED(Superluminescent Light Emitting Diode, ${\lambda}_0$=1305 nm bandwith= 141 nm), a reference arm adopting a rapid scanning optical delay line(RSOD) to get high speed imaging, and a sample arm that used a micro electro mechanical systems(MEMS) scanning mirror. The sample arm contained a compact probe for imaging dental structures. The performance of the system was evaluated by imaging in-vivo human teeth with dental calculus, and the results indicated distinct appearance of dental calculus from enamel, gum or decayed teeth. The developed probe and system could successfully confirm the presence of dental calculus with a very high spatial resolution($6{\mu}m$).

• 센서학회지
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• 제13권3호
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• pp.182-187
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• 2004

The fluorinated amorphous carbon thin films (a-C:F) were deposited by PECVD(plasma enhanced chemical vapor deposition). The precursors were $C_{4}F_{8}$ which had a similar ratio of target film's carbon to fluorine ratio, and $Si_{2}H_{6}$/He for capturing excessive fluorine ion. We varied deposition condition of temperature and working pressure to survey the effect of each changes. We measured dielectric constant, composition, and etc. At low temperature the film adhesion to substrate was very poor although the growth rate was very high, the growth rate was very low at high temperature. The EDS(energy dispersive spectroscopy) result showed carbon and fluorine peak for films and Si peak for substrate. There was no oxygen peak.

• 센서학회지
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• 제6권6호
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• pp.430-436
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• 1997

SDB웨이퍼를 사용한 압저항 형태의 50 G용 가속도 센서를 실리콘 마이크로머시닝을 사용하여 제조하였다. 이 형태의 가속도 센서는 진동하는 사각형의 매스와 4개의 빔으로 구성되어 있다. 이 구조는 RIE를 이용한 건식식각과 KOH 용액을 이용한 습식식각을 이용하여 제조되었다. 정사각형의 보상구조가 매스 가장자리의 언더에칭에 기인하는 변형을 보상하기 위해 사용되었다. 제조된 센서는 인가된 가속도에 대하여 선형적인 출력전압특성을 보여주고 감도는 0에서 10 G까지 약 $88{\mu}V/V{\cdot}g$이었다.

• 센서학회지
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• 제24권3호
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• pp.155-158
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• 2015

In this paper, in-situ heat cooling with temperature monitoring is reported to solve thermal issues in electric vehicle (EV) batteries. The device consists of a thick graphene cooler on top of the substrate and a platinum-based resistive temperature sensor with an embedded heater above the graphene. The graphene layer is synthesized by using chemical vapor deposition directly on the Ni layer above the Si substrate. The proposed thick graphene heat cooler does not use transfer technology, which involves many process steps and does not provide a high yield. This method also reduces the mechanical damage of the graphene and uses only one photomask. Using this structure, temperature detection and cooling are conducted simultaneously using one device. The temperature coefficient of resistance (TCR) of a $1{\times}1mm^2$ temperature sensor on 1-$\grave{i}m$-thick graphene is $1.573{\times}10^3ppm/^{\circ}C$. The heat source cools down $7.3^{\circ}C$ from $54.4^{\circ}C$ to $47.1^{\circ}C$.