• Transactions on Electrical and Electronic Materials
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• v.14 no.6
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• pp.291-294
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• 2013

When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.259-264
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• 1996

In this study, we performed a modeling for $K^{+}$ ion-exchanged diffused channel waveguide and waveguide-type optical coupler by Wentzel-Kramer-Brillouin(WKB) dispersion equation, normalized field distribution equation for mode and coupled mode theory, and examined the optical-power-dividing of the optical coupler fabricated by using the modeling condition. The optical-power-dividing was observed at the waveguide-type optical coupler with 3[.mu.m] line-width, 6[.mu.m] space between channel waveguides, and 3[mm] interaction length.h.

• JSTS:Journal of Semiconductor Technology and Science
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• v.14 no.2
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• pp.169-174
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• 2014

As a versatile processing method for nanoscale memory integration, laser-induced epitaxial growth is proposed for the fabrication of vertical Si channel (VSC) transistor. The fabricated VSC transistor with 80 nm gate length and 130 nm pillar diameter exhibited field effect mobility of $300cm^2/Vs$, which guarantees "device quality". In addition, we have shown that this VSC transistor provides memory operations with a memory window of 700 mV, and moreover, the memory window further increases by employing charge trap dielectrics in our VSC transistor. Our proposed processing method and device structure would provide a promising route for the further scaling of state-of-the-art memory technology.

• Transactions of Materials Processing
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• v.16 no.5 s.95
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• pp.406-411
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• 2007

The microstructure and the hardness of interstitial free steel processed by equal channel angular pressing (ECAP) was investigated experimentally. ECAP processing of route A and route C was compared with regard to grain refinement by transmission electron micrographs. Micro hardness evolution was correlated with the gram structure produced by ECAP. Especially, the effects of the ECAP processing temperature and the number of processing passes were discussed in terms of grain refinement.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.695-698
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• 2006

The photosensitive poly-siloxane material used as the passivation layers for the conventional back channel etched (BCE) thin film transistors (TFTs) has been investigated. Through the organic material, the TFT array fabrication process can be reduced and higher aperture ratio can be achieved for higher LCD panel performance. The interface between the organic passivation layer and the back channel of the amorphous active region has been improved by the back channel oxygen treatment and the devices exhibits lower leakage current than the conventional silicon nitride passivation layer of BCE TFTs. The leakage currents between Indium-tin-oxide (ITO) pixels and the TFT devices and its mechanism have also been investigated in this paper.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.978-980
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• 2003

Perylene tetracarboxylic anhydride derivatives have been well-known as an n-type channel material.$^1$ Here, we report perylene-based pyrrolopyrone derivatives as an n-type channel material. 1,8-naphthalene(l) and 1,2-phenylene(2)-based pyrrolopyrone derivatives were synthesized and characterized. Derivatives 1, 2 were soluble only protonic solvents with high acidity such as methane sulfonic acid and trifluoroacetic acid. Thin film transistors were fabricated by vacumn deposition and solution casting and electron mobility of the device were measured.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.10a
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• pp.804-807
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• 1997

Recently equal-channel angular pressing (ECAP) has been employed to produce ultra-fine grain size materials. In this paper pure-Zirconium is considered due to its applicability to nuclear reactors. Among many process parameters of ECAP frictional effect on the plastic deformation of die has been investigated. The back pressure effect due to friction increases the stress level of die especially at the crossing area of channels, which may result in plastic deformation of die. The finite element method has been employed to investigate this issue.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.16-21
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• 2006

A simple doping method to fabricate a very thin channel body of the p-type FinFETs with a 20 nm gate length by solid-phase-diffusion (SPD) process was developed. Using the poly-boron-films (PBF) as a novel diffusion source of boron and the rapid thermal annealing (RTA), the p-type sourcedrain extensions of the FinFET devices with a threedimensional structure were doped. The junction properties of boron doped regions were investigated by using the $p^+-n$ junction diodes which showed excellent electrical characteristics. Single channel and multi-channel p-type FinFET devices with a gate length of 20-100 nm was fabricated by boron diffusion process using PBF and revealed superior device scalability.

• Proceedings of the KSME Conference
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• 2008.11a
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• pp.1902-1907
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• 2008

The current work presents a design and fabrication technique for a microchannel system to measure the local temperature distribution inside microchannel. This micro channel system fabricated by MEMS technique is integrated with a heater and an array of temperature sensors so that detailed heat transfer phenomena inside micro-scale channel can be studied. Materials widely used in semiconductor process were selected to fabricate a heater and temperature sensors on a silicon wafer. On these heater and sensors a channel wall was fabricated with SU-8. The friction constant and the local Nusselt number distribution measured for the deionized water flow in the microchannel is presented.

• The Journal of Society for e-Business Studies
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• v.3 no.2
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• pp.203-217
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• 1998

Supply chain management is defined as "an integrative philosophy to manage the total flow of a distribution channel from the supplier to the ultimate user". There are many differences between traditional systems and supply chain management systems, There are so many advantages applying SCM concept in inventory management field from the viewpoint of information sharing. While each firm try to optimize the inventory individually in traditional systems, SCM focus on optimizing the channel-wide-inventory making effort to reduce the inventory interrelatedly, The more complex your network of suppliers, manufacturers, and distributors, the more you are likely to gain operational efficiencies by attending on inventory management. The inventory stockpiles at the various sites, including both incoming materials and finished products, have complex interrelationships. Efficient and effective management of inventory throughout the supply chain significantly improves the ultimate service provided to the customer. The purpose of this thesis is to develop the integrated inventory management system for the control of channel-wide inventory on the intranet by applying SCM concept.