• Title/Summary/Keyword: Channel forming

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Design of User Clustering and Robust Beam in 5G MIMO-NOMA System Multicell (5G MIMO-NOMA 시스템 멀티 셀에서의 사용자 클러스터링 및 강력한 빔 설계)

  • Kim, Jeong-Su;Lee, Moon-Ho
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.18 no.1
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    • pp.59-69
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    • 2018
  • In this paper, we present a robust beamforming design to tackle the weighted sum-rate maximization (WSRM) problem in a multicell multiple-input multiple-output (MIMO) - non-orthogonal multipleaccess (NOMA) downlink system for 5G wireless communications. This work consider the imperfectchannel state information (CSI) at the base station (BS) by adding uncertainties to channel estimation matrices as the worst-case model i.e., singular value uncertainty model (SVUM). With this observation, the WSRM problem is formulated subject to the transmit power constraints at the BS. The objective problem is known as on-deterministic polynomial (NP) problem which is difficult to solve. We propose an robust beam forming design which establishes on majorization minimization (MM) technique to find the optimal transmit beam forming matrix, as well as efficiently solve the objective problem. In addition, we also propose a joint user clustering and power allocation (JUCPA) algorithm in which the best user pair is selected as a cluster to attain a higher sum-rate. Extensive numerical results are provided to show that the proposed robust beamforming design together with the proposed JUCPA algorithm significantly increases the performance in term of sum-rate as compared with the existing NOMA schemes and the conventional orthogonal multiple access (OMA) scheme.

Seismic Stratigraphy and Depositional History of Holocene Transgressive Deposits in the Southeastern Continental Shelf, Korea (한국 남동해역 홀로세 해침퇴적층의 탄성파층서 및 퇴적역사)

  • Yoo, Dong-Geun;Kim, Seong-Pil;Lee, Chi-Won;Park, Soo-Chul
    • Economic and Environmental Geology
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    • v.44 no.4
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    • pp.303-312
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    • 2011
  • Analysis of high-resolution seismic profiles from the southeastern continental shelf of Korea reveals that the Holocene transgressive deposits consist of five sedimentary units characterized by retrograding or backstepping depositional arrangements. Unit I, forming a linear sediment body along the shelf margin, is an ancient beach/shoreface deposit formed during the early stage of transgression. During the transgression, the paleo-channels were backfilled with fluvial or coastal-plain sediments, forming Unit II as an incised-channel fill deposit. The near-surface sediment was reworked and eroded by shoreface erosion, forming a thin lag of sands (Unit III) on the midshelf. During the middle stage of the transgression, the shoreline may have stabilized at around 70 - 80 m below the present sea level for some period of time to allow the formation of sand ridge systems (Unit IV). Unit V in the inner shelf was deposited in an estuarine environment during the middle to late stage of transgression. Such transgressive stratigraphic architecture is controlled by a function of lateral changes in the balance among rates of relative sea-level rise, sediment input and marine processes at any given time.

Design and Process Development in High Voltage Insulated Gate Bipolar Transistors (IGBTs)

  • Kim, Su-Seong
    • The Magazine of the IEIE
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    • v.35 no.7
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    • pp.57-71
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    • 2008
  • The last decade has witnessed great improvements in power semiconductor devices thanks to the advanced design and process, which have made it possible to significantly improve the electrical performances of electronic systems while simultaneously reducing their site, weight and perhaps most importantly reducing their cost. Among the power semiconductor devices, IGBT will be a key semiconductor component for power industry since it has a huge potential to cover large areas of power electronics from small home appliances to heavy industries. Currently, only a few limited power semiconductor manufacturers supply most of the industrial consumptions of power IGBT and its modules. Therefore, a large portion of technology in the power industry is dependent on other advanced countries. In this regard, to independently build power IGBT devices and the relevant power module technology, Korean government initiated a new 5-year project 'Power IT,' which also aimed at booming the business of the power semiconductor and the allied industries. With the success of this power IT project, it is expected that the power semiconductor technology will be a basis to foster the high power semiconductor industry and moreover, there will be more innovative developments in the Korea region and globally Also, forming the channel between the customers and suppliers, it is possible to effectively develop the customized power products, which could strengthen the competitiveness of Korean power industry. Furthermore, the power industry including semiconductor manufacturers will be technologically self-supporting and be able to obtain good business opportunities, and eventually increase the share in the growing power semiconductor market, which could be positioned as a major industry in Korea.

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Single-Balanced Low IF Resistive FET Mixer for the DBF Receiver

  • Ko Jee-Won;Min Kyeong-Sik
    • Journal of electromagnetic engineering and science
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    • v.4 no.4
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    • pp.143-149
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    • 2004
  • This paper describes characteristics of the single-balanced low IF resistive FET mixer for the digital beam forming(DBF) receiver. This DBF receiver based on the direct conversion method is designed with Low IF I and Q channel. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 1950 MHz, 1940 MHz and 10 MHz, respectively. Super low noise HJ FET of NE3210S01 is considered in design. The measured results of the proposed mixer are observed IF output power of -22.8 dBm without spurious signal at 10 MHz, conversion loss of -12.8 dB, isolation characteristics of -20 dB below, 1 dB gain compression point(PldB) of -3.9 dBm, input third order intercept point(IIP3) of 20 dBm, output third order intercept point(OIP3) of 4 dBm and dynamic range of 30 dBm. The proposed mixer has 1.0 dB higher IIP3 than previously published single-balanced resistive and GaAs FET mixers, and has 3.0 dB higher IIP3 and 4.3 dB higher PldB than CMOS mixers. This mixer was fabricated on 0.7874 mm thick microstrip $substrate(\varepsilon_r=2.5)$ and the total size is $123.1\;mm\times107.6\;mm$.

Development of Metallic Bipolar Plate for Automotive PEMFC (자동차 구동용 PEMFC 금속계 분리판 개발)

  • Jeon, Yoo-Taek;Chung, Kyeong-Woo;Na, Sang-Mook
    • 한국신재생에너지학회:학술대회논문집
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    • 2005.06a
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    • pp.321-325
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    • 2005
  • Bipolar plate is the main part with MEA in automotive PEMFC. It must have a good electrical conductivity and excellent corrosion resistance, be cost effective. Therefore, stainless steels have been studied by many researchers because of its corrosion resistance and cost benefits. But their properties are not sufficient for the application to bipolar plate for automotive PEMFC. In this work, we have performed stamping using various commercial stainless steels to select candidate material for biploar plate and to derive design parameters for stamping simulation. The results showed that a small curvature at the corner of flow field is more favorable due to easier a plastic deformation. Stamping process was simulated by changing surface condition, and the size and angle of channel. The optimum shape and spring back phenomena were evaluated. Surface coating was applied to increase the corrosion resistance and electrical conductivity of stainless steel. The electrical interfacial resistance was 10 to $15m{\Omega}cm^2$ under clamping force of 150psi. But corrosion resistance of coating on the stainless steel was not good due to the unstableness of microstructure.

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Downlink Space Division Multiple Access with Dynamic Slot Allocation for Multi-User MIMO Systems (복수 사용자 MIMO 시스템을 위한 동적 슬롯 할당 하향링크 공간분할 다중접속 기술)

  • 임민중
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.41 no.10
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    • pp.61-67
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    • 2004
  • The next generation cellular wireless communication systems require high data rate transmissions and large system capacities. In order to meet these requirements, multiple antennas can be used at the base and mobile stations, forming MIMO(Multiple Input Multiple Output) channels. This paper proposes a MIMO SDMA(Space Division Multiple Access) technique with dynamic slot allocation which allows the transmitter to efficiently transmit parallel data streams to each of multiple receivers. The proposed technique can increase system capacities significantly by transmitting a larger number of data streams than conventional MIMO techniques while minimizing the performance degradation due to the beamforming dimension reduction.

Fabrication of MFISFET Compatible with CMOS Process Using $SrBi_2Ta_2O_9$(SBT) Materials

  • You, In-Kyu;Lee, Won-Jae;Yang, Il-Suk;Yu, Byoung-Gon;Cho, Kyoung-Ik
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.1
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    • pp.40-44
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    • 2000
  • Metal-ferroelectric-insulator-semoiconductor field effect transistor (MFISFETs) were fabricated using CMOS processes. The Pt/SBT/NO combined layers were etched for forming a conformal gate by using Ti/Cr metal masks and a two step etching method, By the method, we were able to fabricate a small-sized gate with the dimension of $16/4{\mu}textrm{m}$ in the width/length of gate. It has been chosen the non-self aligned source and drain implantation process, We have deposited inter-layer dielectrics(ILD) by low pressure chemical vapor deposition(LPCVD) at $380^{circ}C$ after etching the gate structure and the threshold voltage of p-channel MFISFETs were about 1.0 and -2.1V, respectively. It was also observed that the current difference between the $I_{ON}$(on current) and $I_{OFF}$(off current) that is very important in sensing margin, is more that 100 times in $I_{D}-V_{G}$ hysteresis curve.

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Schottky barrier polycrystalline silicon thin film transistor by using platinum-silicided source and drain (플레티늄-실리사이드를 이용한 쇼트키 장벽 다결정 박막 트랜지스터트랜지스터)

  • Shin, Jin-Wook;Choi, Chel-Jong;Chung, Hong-Bay;Jung, Jong-Wan;Cho, Won-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.80-81
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    • 2008
  • Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than $10^5$. Significant improvement of electrical characteristics were obtained by the additional forming gas annealing in 2% $H_2/N_2$ ambient, which is attributed to the termination of dangling bond at the poly-Si grain boundaries as well as the reduction of interface trap states at gate oxide/poly-Si channel.

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Attenuated Neuropathic Pain in CaV3.1 Null Mice

  • Na, Heung Sik;Choi, Soonwook;Kim, Junesun;Park, Joonoh;Shin, Hee-Sup
    • Molecules and Cells
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    • v.25 no.2
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    • pp.242-246
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    • 2008
  • To assess the role of $\alpha_{1G}$ T-type $Ca^{2+}$ channels in neuropathic pain after L5 spinal nerve ligation, we examined behavioral pain susceptibility in mice lacking $Ca_{V}3.1$ (${\alpha}_{1G}{^{-/-}}$), the gene encoding the pore-forming units of these channels. Reduced spontaneous pain responses and an increased threshold for paw withdrawal in response to mechanical stimulation were observed in these mice. The ${{\alpha}_{1G}}^{-/-}$ mice also showed attenuated thermal hyperalgesia in response to both low-(IR30) and high-intensity (IR60) infrared stimulation. Our results reveal the importance of ${\alpha}_{1G}$ T-type $Ca^{2+}$ channels in the development of neuropathic pain, and suggest that selective modulation of ${\alpha}_{1G}$ subtype channels may provide a novel approach to the treatment of allodynia and hyperalgesia.

Store-operated Ca2+ entry in muscle physiology and diseases

  • Pan, Zui;Brotto, Marco;Ma, Jianjie
    • BMB Reports
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    • v.47 no.2
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    • pp.69-79
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    • 2014
  • $Ca^{2+}$ release from intracellular stores and influx from extracellular reservoir regulate a wide range of physiological functions including muscle contraction and rhythmic heartbeat. One of the most ubiquitous pathways involved in controlled $Ca^{2+}$ influx into cells is store-operated $Ca^{2+}$ entry (SOCE), which is activated by the reduction of $Ca^{2+}$ concentration in the lumen of endoplasmic or sarcoplasmic reticulum (ER/SR). Although SOCE is pronounced in non-excitable cells, accumulating evidences highlight its presence and important roles in skeletal muscle and heart. Recent discovery of STIM proteins as ER/SR $Ca^{2+}$ sensors and Orai proteins as $Ca^{2+}$ channel pore forming unit expedited the mechanistic understanding of this pathway. This review focuses on current advances of SOCE components, regulation and physiologic and pathophysiologic roles in muscles. The specific property and the dysfunction of this pathway in muscle diseases, and new directions for future research in this rapidly growing field are discussed.