한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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- Pages.80-81
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- 2008
플레티늄-실리사이드를 이용한 쇼트키 장벽 다결정 박막 트랜지스터트랜지스터
Schottky barrier polycrystalline silicon thin film transistor by using platinum-silicided source and drain
- Shin, Jin-Wook (Kwangwoon Univ.) ;
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Choi, Chel-Jong
(Chonbuk Univ.) ;
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Chung, Hong-Bay
(Kwangwoon Univ.) ;
- Jung, Jong-Wan (Sejong Univ.) ;
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Cho, Won-Ju
(Kwangwoon Univ.)
- 발행 : 2008.11.06
초록
Schottky barrier thin film transistors (SB-TFT) on polycrystalline silicon(poly-Si) are fabricated by platinum silicided source/drain for p-type SB-TFT. High quality poly-Si film were obtained by crystallizing the amorphous Si film with excimer laser annealing (ELA) or solid phase crystallization (SPC) method. The fabricated poly-Si SB-TFTs showed low leakage current level and a large on/off current ratio larger than
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