• 전기의세계
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• 제27권4호
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• pp.45-51
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• 1978

A new method of realizing the field effect transistor with a sub-.mu. channel width is described. The sub-.mu. channel width is made possible by etching grooves into n$^{+}$ pn$^{[-10]}$ n$^{[-10]}$ structure and using p region at the wall for the channel region of the Metal-Oxide-Semiconductor transistor (MOST), or by diffusing two different types of impurities through the same diffusion mask and using p region at the surface for the channel region of MOST. When the drain voltage is increased at the pn$^{[-10]}$ drainjunction the depletion layer extends into the n$^{[-10]}$ region instead of into p region; this is also the secret of success to realize the sub-.mu. channel width. As the result of the experimental fabrication, a microwave MOST was obtained. The cut-off frequency was calculated to be 15.4 GHz by Linvill's power equation using the measured capacitances and transconductance.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2004년도 추계학술대회 논문집
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• pp.709-713
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• 2004

Characteristics of laser-assisted wet etching of titanium in phosphoric acid were investigated to examine the feasibility of this method for fabrication of high aspect ratio microchannels. Laser power, number of scans, etchant concentration, position of beam waist and scanning speed were taken into consideration as the major process parameters exerting the temperature distribution and the cross sectional profile of etched channels. Experimental results indicated that laser power influences on both etch width and depth while number of scans and scanning speed mainly affect on the etch depth. At a low etchant concentration, the cross sectional profile of an etched channel becomes a U-shape but it gradually turns into a V-shape as the concentration increases. On the other hand, surface of the laser beam focus with respect to the sample surface is found to be a key factor determining the bubble dynamics and thus the process stability. It is demonstrated that metallic microchannels with different cross sectional profiles can be fabricated by properly controlling the process parameters. Microchannels of aspect ratio up to 8 with the width and depth ranges of 8∼32 m and 50∼300 m, respectively, were fabricated.

• 한국정밀공학회지
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• 제23권9호
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• pp.164-173
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• 2006

The cooling capacity of a micro-heat pipe is mainly governed by the magnitude of capillary pressure induced in the wick structure. For microchannel wicks, a higher capillary pressure is achievable for narrower and deeper channels. In this study, a metallic micro-heat pipe adopting high-aspect-ratio microchannel wicks is fabricated. Micromachining of high-aspect-ratio microchannels is done using the laser-induced wet etching technique in which a focused laser beam irradiates the workpiece placed in a liquid etchant along a desired channel pattern. Because of the direct writing characteristic of the laser-induced wet etching method, no mask is necessary and the fabrication procedure is relatively simple. Deep microchannels of an aspect ratio close to 10 can be readily fabricated with little heat damage of the workpiece. The laser-induced wet etching process for the fabrication of high-aspect-ratio microchannels in 0.5mm thick stainless steel foil is presented in detail. The shape and size variations of microchannels with respect to the process variables, such as laser power, scanning speed, number of scans, and etchant concentration are closely examined. Also, the fabrication of a flat micro-heat pipe based on the high-aspect-ratio microchannels is demonstrated.

• 전자공학회논문지D
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• 제35D권4호
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• pp.78-83
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• 1998

A small size cartrideg for FET type electrolyte sensor is designed and faricated with much simplified process by using micromachining tenchiques such as silicon etching andglass bonding. Size of the whole cartideg is 2.4cm*2.5cm, and the dead volume of a micro flow-channel in the cartrideg is only 8.5.mu.l. The photosensitive polymer(THB 30) is used to define a micropool and to encapsulate the sensor surface for standardizationof electrolyte sensors. To miniaturize micro flow-channel conventional reference electrode(Ag/AgCl) a differential amplification is introduced using REFET and quasi reference electrode. Refet was fabricated using photosensitive polymer(OMR 83). The fabricated cartridge with built-in pH-ISFET showed good operational characteristics such as linearity and high sensitivity (55.4mV/pH) in a wide pH range(pH2-pH12).

• 대한전자공학회논문지
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• 제24권5호
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• pp.804-812
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• 1987

1\ulcorner gate MESFETs are fabricated on MOCVD and VPE grown GaAs wafers using photolithography, chemical wet etching and lift-off techniques. DC characteristics such as Vt, Gm, Rs, etc. are studied and active channel parameters of MESFET(a, n, Leff, \ulcorner)are analyzed for 1-4 \ulcorner gate FETs and 100\ulcorner FAT FET. The correlation between DC data and active channel parameters are experimentally analyzed. The measured transconductance and low-field mobility in the active channel for the 1\ulcorner gate MESFET made on MOCVD wafer are 67mS/mm and 2980cm\ulcornerVs respectively.

• 전기의세계
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• 제38권4호
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• pp.12-19
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• 1989

16Mb DRAM을 개발하는데 필요한 주요한 기술적인 문제점으로 설계면에서는 전력소모, Noise, Vcc내부 전압강하회로를 들 수 있다. 기술적인 면은 CELL을 어떻게 형상화느냐에 따라 문제가 다르게 나타나나 단차에 따른 photo/etching, 박막의 leakage전류와 reliability, short channel에 따른 transistor특성의 안정화등이 있다. 특히 16Mb에서는 stack형, stack과 trench의 병합형이 cell의 주요형태가 될 전망이다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제3권1호
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• pp.27-32
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• 2003

Highly reproducible side-wall process for the fabrication of the fine gate length as small as 40nm was developed. This process was utilized to fabricate 40nm InGaAs HEMTs with the 65% strained channel. With the usage of the dual $SiO_2$ and $SiN_x$ dielectric layers and the proper selection of the etching gas, the final gate length (Lg) was insensitive to the process conditions such as the dielectric over-etching time. From the microwave measurement up to 40GHz, extrapolated fT and fmax as high as 371 and 345 GHz were obtained, respectively. We believe that the developed side-wall process would be directly applicable to finer gate fabrication, if the initial line length is lessened below the l00nm range.

• 대한기계학회논문집A
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• 제30권2호
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• pp.157-163
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• 2006

Our research dealt with micro fabrication using micro forming process. The goal of the research was to establish the limit of forming process concerning the size of forming material and formed shape. Flat-rolled ultra thin metallic foils of pure copper(3.0 and $1.0{\mu}m$ in thickness)and stainless steel($2.5{\mu}m$ in thickness) were used for forming material. We obtained the various shapes of micro channels as using designed forming process. $12-14{\mu}m$ wide and $9{\mu}m$ deep channels were made on $3.0{\mu}m$ thick foil and $6{\mu}m$ wide and $3{\mu}m$deep channels were made on $1.0{\mu}m$ thick foil. Si wafer die for forming was fabricated by using etching technique. And the relation of etching time and die dimension was investigated for fabricating precisely die groove. For the forming, die and metal foil were vacuum packed and the forming was conducted with a cold isostatic press. The formed channels were examined in terms of their dimension, surface qualities and potential for defects. Base on the examinations, formability of ultra thin metallic foil was also discussed. Finally, we compared the forming result with simulation. The result of research showed that metal forming technology is promising to produce micro parts.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2007년도 춘계학술대회B
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• pp.1894-1899
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• 2007

This paper presents the thermal characteristics for micro heat exchanger with different micro-channel shapes. The shapes of micro-channel has been manufactured sheet metal by chemical etching for the I shape of straight channel and V and W shapes of chevron feature and fabricated micro plated heat exchangers using the vacuum brazing of bonding technology. The experimental study has been performed on heat transfer and pressure drop characteristics with various Reynolds number for water to water at the counter flows. The average heat transfer rate of V and W shapes has been showed about 1.5${\sim}$1.6 times large than those of I shape. For the comparison of Nusselt number, it is known that the convective heat transfer of V and W shapes represent more effect than I shape. The pressure drops of V and W shapes are about 1.2${\sim}$1.7 times lager than those of I shape.

• 소성∙가공
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• 제13권4호
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• pp.326-333
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• 2004

The nanoprobe based on lithography, mainly represented by SPM based technologies, has been recognized as a potential application to fabricate the surface nanosctructures because of its operational versatility and simplicity. However, nanoprobe based on lithography itself is not suitable for mass production because it is time a consuming method and not economical for commercial applications. One solution is to fabricate a mold that will be used for mass production processes such as nanoimprint, PDMS casting, and others. The objective of this study is to fabricate the silicon stamper for PDMS casting process by a mastless fabrication technique using the combination of nano/micro machining by Nanoindenter XP and KOH wet etching. Effect of the Berkovich tip alignment on the deformation was investigated. Grooves were machined on a silicon surface, which has native oxide on it, by constant load scratch (CLS), and they were etched in KOH solutions to investigate chemical characteristics of the machined silicon surface. After the etching process, the convex structures was made because of the etch mask effect of the mechanically affected layer generated by nanoscratch. On the basis of this fact, some line patterns with convex structures were fabricated. Achieved groove and convex structures were used as a stamper for PDMS casting process.