• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.98-104
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• 2002

CeO$_2$ and NiO buffers for YBCO coated conductors were deposited on biaxially textured Ni substrate by metalorganic chemical vapor deposition(MOCVD) and the deposition behavior were investigated. The degree of texture of deposited CeO$_2$ and NiO films was strongly dependent on the deposition temperature(T$\sub$d/) and oxygen partial pressure(P$\sub$O$_2$/). ($\ell$00) textured films were well deposited at specific deposition temperatures and oxygen partial pressures. The in-plane and out of plane textures estimated form the full width half maximum of the pole figure peaks were less than 10$^{\circ}$. The surface morphology showed that the CeO$_2$ films consisted of columnar grains grown normal to the Ni substrates, while NiO films were slate and clean like a mirror. The surface roughness of both films estimated by atomic force microscopy(AFM) were as smooth as 3-10 m. The growth rate of the films is much faster than that of other physical deposition methods.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.122-127
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• 2000

Microstructural evolutions in ceria-stabilized zirconia (Ce-TZP) and alumina-dispersed Ce-TZP ceramics were investigated as functions of doping and annealing conditions. All of sintered specimens showed the relative density over 99 %. Sintered specimens had linear grain boundaries and normal grain shapes, but ceria-doped specimens had irregular grain shapes and nonlinear grain boundaries due to the diffusion-induced grain boundary migration during annealing at $1650^{\circ}C$ for 2 h. Mean grain boundary length of Ce-TZP with irregular grain shapes was higher than that of normal grain shapes, and was a value of 23pm at the maximum. Alumina particles dispersed in Ce-TZP inhibited the grain growth of zirconia particles. $Al_2O_3$Ce-TZP doped with ceria and annealed at $1650^{\circ}C$ for 2 h showed irregular grain shapes as well as small grain size. Added alumina particles showed the grain growth during sintering or annealing, and they changed the position from grain boundary to inside of the grains during the annealing. The specimens with normal grain shapes showed an intergranular fracture mode, whereas the specimens with irregular grain shapes showed a transgranular fracture mode during the crack propagation.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.305-307
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• 1997

Gd-doped $CeO_2$, ultrafine powders were synthesized by the glycine-nitrate process and then their sintering and electrical characteristics were analysed using the dilatometric and AC impedance measurements. In the dilatometric measurements green bodies from the synthesized powders after milling shrinked to about $1470^{\circ}C$ in appearance and then expanded thermally with the increase of the heating temperature, whereas those from the synthesized powders before milling continuously shrinked to the temperatures of $1600^{\circ}C$. It may be due to the change of the packing density of the synthesized powders by milling. In the AC impedance measurements, the electrical resistivity of the Gd-doped $CeO_2$ bodies from the as-milled powders, sintered at $1500^{\circ}C$ with the increase of the sintering time, showed the minimum value at the sintering time of 10h. The minimum total resistivity of the Gd-doped $CeO_2$ bodies sintered at $1500^{\circ}C$ for 10h seems to result from the lowest activation energy by the combination between the activation energies for the resistivities at the grain interior and grain boundary.

• Journal of Powder Materials
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• v.18 no.3
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• pp.250-255
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• 2011

The potential application of ultrafine cerium oxide (ceria, $CeO_2$) as an oxygen gas sensor has been investigated. Ceria was synthesized by a thermochemical process: first, a precursor powder was prepared by spray drying cerium-nitrate solution. Heat treatment in air was then performed to evaporate the volatile components in the precursor, thereby forming nanostructured $CeO_2$ having a size of approximately 20 nm and specific surface area of 100 $m^2/g$. After sintering with loosely compacted samples, hydrogen-reduction heat treatment was performed at 773K to increase the degree of non-stoichiometry, x, in $CeO_{2-x}$. In this manner, the electrical conductivity and oxygen-response ability could be enhanced by increasing the number of oxygen vacancies. After the hydrogen reduction at 773K, $CeO_{1.5}$ was obtained with nearly the same initial crystalline size and surface. The response time $t_{90}$ measured at room temperature was extremely short at 4 s as compared to 14 s for normally sintered $CeO_2$. We believe that this hydrogen-reduced ceria can perform capably as a high-performance oxygen sensor with good response abilities even at room temperature.

• Korean Journal of Materials Research
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• v.25 no.3
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• pp.144-148
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• 2015

Cubic mesocrystal $CeO_2$ was synthesized via a hydrothermal method with glutamic acid ($C_5H_9NO_4$) as a template. The XRD pattern of a calcined sample shows the face-centered cubic fluorite structure of ceria. Transmission electron microscopy (TEM) and the selected-area electron diffraction (SAED) pattern revealed that the submicron cubic mesocrystals were composed of many small crystals attached to each other with the same orientation. The UV-visible adsorption spectrum exhibited the red-shift phenomenon of mesocrystal $CeO_2$ compared to commercial $CeO_2$ particles; thus, the prepared materials show tremendous potential to degrade organic dyes under visible light illumination. With a concentration of a rhodamine B solution of 20 mg/L and a catalyst amount of 0.1 g/L, the reaction showed higher photocatalytic performance following irradiation with a xenon lamp (${\geq}380nm$). The decoloring rate can exceed 100% after 300 min.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.361-364
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• 2003

It was investigated that the structural and electrical Properties of Ce-doped Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$ (BCZT) thin films with a mole fraction of x=0.2 and a thickness about 100 nm. BCZT films were prepared on Pt/Ti/SiO$_2$/Si substrate by a RF magnetron sputtering system. We have measured the thickness profile with Ar/O$_2$ ratio and the surface roughness. It was observed that the oxygen gas, which introduced during the film deposition, have an influence on the roughness of the film and the film roughness was reduced by annealing from 2.33 nm to 2.02 nm (RMS at 500 $^{\circ}C$, Ar:6 sccm, $O_2$:6 sccm). It was found that annealing procedure after top electrode deposit can reduce the dissipation factor.

• Applied Chemistry for Engineering
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• v.31 no.3
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• pp.323-327
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• 2020

The reaction characteristics of Ni/CeO_2-X which is highly efficient at a low temperature was investigated for an application to carbon dioxide methanation process. The CeO_2-X support was obtained by the heat treatment of Ce(NO₃)₃ at 400 ℃ and the catalyst was prepared by impregnation process. The operating parameters of the experiment were the internal pressure of the reactor, the composition of oxygen, methane, and hydrogen sulfide in the inlet gas and the reaction temperature. When Ni/CeO_2-X was used for the carbon dioxide methanation reaction, the CO₂ conversion rate increased by more than 25% as the pressure increased from 1 to 3 bar. The increase was large at a low reaction temperature. When both oxygen and methane were in the inlet gas, the CO₂ conversion rate of the catalyst decreased by up to 16 and 4%, respectively. As the concentration of oxygen and methane increased, the reduction rate of the CO₂ conversion rate tended to increase. In addition, the hydrogen sulfide in the inlet gas reduced the CO₂ conversion rate by up to 7% and caused catalyst deactivation. The results of this study will be useful as basic data for the carbon dioxide methanation process.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.201-206
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• 2000

Effects of the post-annealing temperature of CeO$_2$ buffer layers on the properties of YBCO films on CeO$_2$-buffered sapphire were investigated. 45 nm-thick CeO$_2$ buffer layer was prepared in-situ on r-cut sapphire using an on-axis rf magnetron sputtering method, which was later post-annealed at temperatures between 950$^{\circ}$C and 1100$^{\circ}$C in an oxygen-flowing environment. YBCO films were prepared on CeO$_2$-buffered sapphire (CbS), for which the surface morphology, crystal structures and electrical properties of the YBCO films were studied. YBCO films on post-annealed CbS appeared to have better properties than those on as-grown CbS with regard to the morphological, structural and electrical properties when the YBCO films were prepared on CeO$_2$ buffer layer post-annealed at temperatures of 1000 - 1050$^{\circ}$C. A TE$_{011}$ mode rutileloaded cylindrical cavity resonators was fabricated with the YBCO films placed as the endplates, for which the unloaded Q of the resonator was measured. It turned out that the resonator with the endplates prepared from the YBCO films on postannealed CbS at 1000 $^{\circ}$C showed the highest unloaded Q with the value more than 8 ${\times}$ 10$^5$ at 30 K and 8.6 CHz, revealing that the YBCO films on post-annealed CbS at 1000$^{\circ}$C the temperature could be the lowest among the YBCO films on post-annealed CbS.

• Applied Science and Convergence Technology
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• v.25 no.1
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• pp.19-24
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• 2016

In this study, we evaluated the change of electronic structure during redox process in cerium-doped $ZrO_2$ grown by sol gel method. By sol-gel method, we could obtain cerium-doped $ZrO_2$ in high oxygen partial pressure and low temperature. After post annealing process in nitrogen ambient, the film is deoxidized. We used spectroscopic and theoretical methods to analysis change of electronic structure. X-ray absorption spectroscopy (XAS) for O K1-edge and Density Functional Theory (DFT) calculation using VASP code were performed to verify the electronic structure of the film. Also, high resolution x-ray photoelectron spectroscopy (HRXPS) for Ce 3d was carried out to confirm chemical bond of cerium doped $ZrO_2$. Through the investigation of the electronic structure, we verified as followings. (1) During reduction process, binding energy of oxygen is increase. Simultaneously, oxidation state of cerium was change to 4+ to 3+. (2) Cerium 4+ and cerium 3+ states were generated at different energy level. (3) Absorption states in O K edge were mainly originated by Ce 4+ $f_0$ and Ce 3+, while occupied states in valance band were mainly originated from Ce 4+ $f_2$.

• Proceedings of the Korean Ceranic Society Conference
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• 2003.04a
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• pp.156.2-156
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• 2003