• Title/Summary/Keyword: Cascode FET

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The Design of a Sub-Harmonic Dual-Gate FET Mixer

  • Kim, Jeongpyo;Lee, Hyok;Park, Jaehoon
    • Journal of electromagnetic engineering and science
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    • v.3 no.1
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    • pp.1-6
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    • 2003
  • In this paper, a sub-harmonic dual-gate FET mixer is suggested to improve the isolation characteristic between LO and RF ports of an unbalanced mixer. The mixer was designed by using single-gate FET cascode structure and driven by the second harmonic component of LO signal. A dual-gate FET mixer has good isolation characteristic since RF and LO signals are injected into gatel and gate2, respectively. In addition, the isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer due to the large frequency separation between the LO and RF frequencies. As RF power was -30 ㏈m and LO power was 0 ㏈m, the designed mixer yielded the -47.17 ㏈m LO-to-RF leakage power level, 10 ㏈ conversion gain, -2.5 ㏈m OIP3, -12.5 ㏈m IIP3 and -1 ㏈m 1 ㏈ gain compression point. Since the LO-to-RF leakage power level of the designed mixer is as good as that of a double-balanced mixer, the sub-harmonic dual-gate FET mixer can be utilized instead.

Design of Ku-Band Self-Oscillatring Mixer Using Cascode FETs Structure (Cascode형 FETs 구조를 이용한 Ku-Band 자기발진믹서의 설계)

  • 심재우;이영철
    • Proceedings of the Korea Electromagnetic Engineering Society Conference
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    • 2001.11a
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    • pp.227-230
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    • 2001
  • 본 논문은 마이크로파 슈퍼헤테로다인 수신기에서 발생되는 이미지성분을 효과적으로 제거하기위한 Cascode형 FETs구조를 이용한 Ku-Band 이미지 제거용 자기발진믹서을 분석하였다. 자기발진믹서는 두개의 FET에 의해서 동작되며 상위 FET는 유전체공진기에 의해서 발진기로 동작하며, 아래쪽 FET는 믹서로 동작시켰다. 모의실험 결과 초기 게이트바이어스 전압은 $V_{ gsl}$=-0.4V와 $V_{g2}$=-0.4V와 $V_{g2}$V선정 하였으며, 10.75GHz의 발진기 출력은 2.249dBm, 위상잡음은 -137.9dBc/1000KHz, 이미지 제거특성은 약 -26dBc 값을 얻었다.얻었다.

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Design of MMIC Variable Gain LNA Using Behavioral Model for Wireless LAM Applications (거동모델을 이용한 무선랜용 MMIC 가변이득 저잡음 증폭기 설계)

  • Park, Hun;Yoon, Kyung-Sik;Hwang, In-Gab
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.29 no.6A
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    • pp.697-704
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    • 2004
  • This paper describes the design and fabrication of an MMIC variable gain LNA for 5GHz wireless LAN applications, using 0.5${\mu}{\textrm}{m}$ gate length GaAs MESFET transistors. The advantages of high gain and low noise performance of E-MESFETS and excellent linear performance of D-MESFETS are combined as a cascode topology in this design. Behavioral model equations are derived from the MESFET nonlinear current voltage characteristics by using Turlington's asymptote method in a cascode configuration. Using the behavioral model equations, a 4${\times}$50${\mu}{\textrm}{m}$ E-MESFET as a common source amplifier and a 2${\times}$50${\mu}{\textrm}{m}$ D-MESFET as a common gate amplifier are determined for the cascode amplifier. The fabricated variable gain LNA shows a noise figure of 2.4dB, variable gain range of more than 17dB, IIP3 of -4.8dBm at 4.9GHz, and power consumption of 12.8mW.

A Study on the Telescopic Cascode Comparator in SET Situation (SET 상황에서 텔레스코픽 캐스코드 비교기에 관한 연구)

  • Jang, Jae-Seok;Chung, Jae-Pil;Park, Jung-Cheul
    • The Journal of Korea Institute of Information, Electronics, and Communication Technology
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    • v.13 no.4
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    • pp.277-282
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    • 2020
  • This study was initiated to find a way to resolve electronic equipment as it could be affected by multiple environments. The effect of setting the exponential constant wave (iExp) in the telescopic cascade comparator to the SET (Single Event Transient) environment was tested. In this paper, the radio wave delay was measured at 0.46 ㎲ and the gain at 0.713 in the telescopic cascade comparator without setting the SET situation. FET T0 (M6) was measured to have a large spike at 11㎲ to 15㎲ in the telescopic cascade comparator entering the SET situation. FET T1 (M5) has shorted output signals from 10 ㎲ to 16 ㎲. FET T2 (M3) represented a shorted output signal, and FET T3 (M4) measured the output waveform in the form of a large spike waveform. The FET T4 (M1) and FET T5 (M2) are spiky signals. And at all FETs, the propagation delay was changed from 0.45㎲ to 0.54㎲. In summary, The FET element in the telescopic cascade comparator in SET situation was measured to be greatly affected.

A GaAs MMIC Single-Balanced Upconverting Mixer With Built-in Active Balun for PCS Applications (PCS 용 MMIC Single-blanced upconverting 주파수 혼합기 설계 및 제작)

  • 강현일;이원상;정기웅;오재응
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.4
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    • pp.1-8
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    • 1998
  • An MMIC single-balanced upconverting mixer for PCS application has been successfully developed using an MMIC process employed by 1 .mu. ion implanted GaAs MESFET and passive lumped elements consisting of spiral inductor, Si3N4 MIM capacitors and NiCr resistors. The configuration of the mixer presented in this paper is two balanced cascode FET mixers with common-source self-bias circuits for single power supply operation. The dimension of the fabricated circuit including two active baluns intermodulation characteristic with two-tone excitation are also measured, showing -28.17 dBc at IF power of -30 dBm.

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Post-Linearization of Differential CMOS Low Noise Amplifier Using Cross-Coupled FETs

  • Kim, Tae-Sung;Kim, Seong-Kyun;Park, Jin-Sung;Kim, Byung-Sung
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.4
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    • pp.283-288
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    • 2008
  • A post-linearization technique for the differrential CMOS LNA is presented. The proposed method uses an additional cross-coupled common-source FET pair to cancel out the third-order intermodulation ($IM_3$) current of the main differential amplifier. This technique is applied to enhance the linearity of CMOS LNA using $0.18-{\mu}m$ technology. The LNA achieved +10.2 dBm IIP3 with 13.7 dB gain and 1.68 dB NF at 2 GHz consuming 11.8 mA from a 1.8-V supply. It shows IIP3 improvement by 6.6 dB over the conventional cascode LNA without the linearizing circuit.

Reconfigurable Multi-Band Mixer for SDR System

  • Kim, Jeong-Pyo;Choi, Jae-Hoon
    • Journal of electromagnetic engineering and science
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    • v.7 no.4
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    • pp.154-160
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    • 2007
  • A reconfigurable multi-band mixer for the SDR system is proposed. The proposed reconfigurable mixer is operated between $850\;MHz{\sim}2\;GHz$, which includes all commercial mobile communication service. Because the varactor diodes are used to select a specific frequency and to adjust the impedance characteristic of the selected frequency band, the proposed reconfigurable mixer can be achieved to similar performance across all of the tuning range. In addition, the designed reconfigurable mixer is applicable for the SDR system since it has a single signal path for the multi-band signals and wide band tuning range.

A Study for active MMIC (능동 MMIC mixer에 관한 연구)

  • Kim, Young-Gi;Baek, Kyoung-Sik;Kim, Hyuk;Yoon, Shin-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.12
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    • pp.14-24
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    • 2001
  • An active MMIC L-band down converting mixer was designed by using GaAs FET with 0.5 ${\mu}$m gate length and 300 ${\mu}$m gate width. Main circuit topology was cascoded two active FETs. It consumed only 7.5 mA with 3V DC voltage supply. Conversion gain of 6.63 dB, minumium noise figure of 5.06 dB and Input $3^{rd}$ Order Intercept Point of 6.4 dBm were obtained. The chip size is 1.86 mm ${\times}$ 1.28 mm.

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