• 대한전자공학회논문지
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• 제24권1호
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• pp.102-109
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• 1987

This study is carrier out to investigate the carrier injection and the characteristics of trapping for the CVD deposited Al2O3 film on Si substrates. Samples used are metal -Al2O3-Si Structure in which metal field plates are used with Aluminium or God. Canier injection and trapping, which result in flat band voltalge shift, occur at fields as low as 1~2 MV/cm. An approximate method is proposed for computing the location of the centroid of the trapped electrons in this paper. Results show that carriers are trapped near the injecting interface at fields less than about 5MV/cm. Because of continued charging, a steady state can not be reached. Therefore the unique I-V curve is obtained when the traps are initially empty. By utilization of applied voltage on each point of the fresh device sample, it is measured the I-V surves for two polarities of applied voltage. The current densities observed in the Al2O3 films are much larger than those obtained in SiO2.

• Journal of Advanced Marine Engineering and Technology
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• 제38권5호
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• pp.589-601
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• 2014

Natural gas hydrate (NGH) is emerging as a new eco-friendly source of energy to replace fossil fuels in the 21st century. It is well known that the Natural Gas Hydrate contains large amount of natural gas about 170 times as much as its volume and it is easy to be stored and transported safely at about $-20^{\circ}C$ under atmospheric pressure due to so called "self-preservation effect". The option of gas transport by gas hydrate pellets carrier has been investigated and developed in various industry and academy. The natural gas hydrate pellet carrier is on major link in a potential gas hydrate process chain, starting with the extraction of natural gas from the reservoir, followed by the production of hydrate pellets and the transportation to an onshore terminal for further processing or marketing. In recent years, Korean project team supported by Korean Government has been working on the development of NGH total systems including novel NGH carrier since 2011. In order to increase the knowledge on the NGH pellet carrier developed and to understand the major hazards that could have significant impact on the safety of the vessel, this paper presents and evaluates the pros and cons of cargo holds, loading and unloading systems through the analysis of current patent technology. Based on the proven and well-known technologies as well as potential measures to mitigate sintering and minimize mechanical stress on the hydrate pellet in the self-preservation state, this study presents the conceptual and basic design for NGH carrier.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
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• pp.515-518
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• 2002

In this paper, we demonstrate the impact of oxide interface-state on low temperature poly-Si TFTs. The TFTs with interface-state exhibit poor performance and serious degradation under hot carrier and gate bias stress. Our results indicate that the worse oxide integrity cause initial characteristic shift and device instability.

• 한국광학회:학술대회논문집
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• 한국광학회 2000년도 제11회 정기총회 및 00년 동계학술발표회 논문집
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• pp.276.1-277
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• 2000

Absorptive bistable laser diode was analyzed by using traveling wave model in conjunction with the finite-difference method. Carrier and photon density distributions were calculated and the output characteristics were obtained. The results for both the steady-state and transient (switching) cases were compared with those of the rate equation approach.

• 대한전기학회논문지
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• 제32권6호
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• pp.205-210
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• 1983

This paper presents a steady-state computer solution of the fundamental semiconductor one-dimensional transport equations, describing a single (metal-semiconductor) contact device, involving only one type of charge carrier. The computations are conveniently made by the

• 대한전기학회:학술대회논문집
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• 대한전기학회 2006년도 학술대회 논문집 전문대학교육위원
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• pp.154-158
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• 2006

The switching-mode power converter has been widely used because of its features of high efficiency and small weight and size. These features are brought by the ON-OFF operation of semiconductor switching devices. However, this switching operation causes the surge and EMI(Electromagnetic Interference) which deteriorate the reliability of the converter themselves and entire electronic systems. This problem on the surge and noise is one of the most serious difficulties in AC-to-DC converter. Random Pulse Width Modulation (RPWM) is peformed by adding a random perturbation to switching instant while output-voltage regulation of converter is performed. RPWM method for reducing conducted EMI in single switch three phase discontinuous conduction mode boost converter is presented. The more white noise is injected, the more conducted EMI is reduced. But output-voltage is not sufficiently regulated. This is the reason why carrier frequency selection topology is proposed. In the case of carrier frequency selection, output-voltage of steady state and transient state is fully regulated. A RPWM control method was proposed in order to smooth the switching noise spectrum and reduce it's level. Experimental results are verified by converter operating at 300v/1kW with $5%{\sim}30%$ white noise input. Spectrum analysis is performed on the Phase current and the CM noise voltage. The former is measured with Current Probe and the latter is achieved with LISN, which are connected to the spectrum analyzer respectively.

• 한국수소및신에너지학회논문집
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• 제28권4호
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• pp.384-391
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• 2017

Effects of operating variables on solid circulation rate were measured and discussed using two-interconnected circulating fluidized bed system at ambient temperature and pressure. OCN 706-1100 particles were used as oxygen carrier. The measured solid circulation rates increased as the lower loop seal gas flow rates and the solid height in the fuel reactor increased. Suitable operating conditions to avoid choking of the air reactor were confirmed. Continuous long-term operations of steady-state solid circulation were also demonstrated at two different conditions based on the operating window.

• 인터넷정보학회논문지
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• 제13권1호
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• pp.7-14
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• 2012

본 논문은 불완전한 채널 감지를 고려한 포화 상태에서의 IEEE 802.11 carrier-sense multiple access with collision-avoidance(CSMA/CA)의 성능을 분석한다. 불완전한 채널 감지는 missed-detection과 false alarm을 포함하는데, 이러한 불완전한 채널 감지가 IEEE 802.11의 성능에 미치는 영향을 분석하고 이를 수식적으로 표현한다. 물리 계층의 불완전한 채널 감지를 표현하기 위해, 본 논문에서는 기존의 2차원 마코프 프로세스 모델을 수정했다. 모의실험 결과와 제안된 모델의 이론적인 결과가 일치하는 것을 보였다. 이러한 실험 결과를 바탕으로, 감지 확률이 IEEE 802.11의 성능에 있어 가장 중요한 요소임을 확인하였다.

• 대한간호학회지
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• 제38권4호
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• pp.493-502
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• 2008

Purpose: The purpose of this study was to examine the effects of aroma hand massage on pain, state anxiety and depression in hospice patients with terminal cancer. Methods: This study was a nonequivalent control group pretest-posttest design. The subjects were 58 hospice patients with terminal cancer who were hospitalized. Twenty eight hospice patients with terminal cancer were assigned to the experimental group (aroma hand massage), and 30 hospice patients with terminal cancer were assigned to the control group (general oil hand massage). As for the experimental treatment, the experimental group went through aroma hand massage on each hand for 5 min for 7 days with blended oil-a mixture of Bergamot, Lavender, and Frankincense in the ratio of 1:1:1, which was diluted 1.5% with sweet almond carrier oil 50 ml. The control group went through general oil hand massage by only sweet almond carrier oil-on each hand for 5 min for 7 days. Results: The aroma hand massage experimental group showed more significant differences in the changes of pain score (t=-3.52, p=.001) and depression (t=-8.99, p=.000) than the control group. Conclusion: Aroma hand massage had a positive effect on pain and depression in hospice patients with terminal cancer.

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1073-1077
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• 2006

Proton irradiation technology was used for improvement of switching characteristics of the PT-IGBT. Proton irradiation was carried out at 5.56 MeV energy with $1{\times}10^{12}/cm^2$ doze from the back side of the wafer. The I-V, breakdown voltage, and turn-off delay time of the device were analyzed and compared with those of un-irradiated device and e-beam irradiated device which was conventional method for minority carrier lifetime reduction. For proton irradiated device, the breakdown voltage and the on-state voltage were 733 V and 1.85 V which were originally 749 V and 1.25 V, respectively. The turn-off time has been reduced to 170 ns, which was originally $6{\mu}s$ for the un-irradiated device. The proton irradiated device was superior to e-beam irradiated device for the breakdown voltage and the on-state voltage which were 698 V and 1.95 V, respectively, nevertheless turn-off time of proton irradiated device was reduced to about 60 % compared to that of the e-beam irradiated device.