한국정보디스플레이학회:학술대회논문집
- 2002.08a
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- Pages.515-518
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- 2002
Reliability Aging of Oxide Integrity on Low Temperature Polycrystalline Silicon TFTs
- Chen, Chih-Chiang (Electronics Research and Service Organization /Industrial Technology Research Institute) ;
- Hung, Wen-Yu (Electronics Research and Service Organization /Industrial Technology Research Institute) ;
- Chen, Pi-Fu (Electronics Research and Service Organization /Industrial Technology Research Institute) ;
- Yeh, Yung-Hui (Electronics Research and Service Organization /Industrial Technology Research Institute)
- Published : 2002.08.21
Abstract
In this paper, we demonstrate the impact of oxide interface-state on low temperature poly-Si TFTs. The TFTs with interface-state exhibit poor performance and serious degradation under hot carrier and gate bias stress. Our results indicate that the worse oxide integrity cause initial characteristic shift and device instability.
Keywords