• Bulletin of the Korean Chemical Society
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• v.29 no.9
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• pp.1729-1731
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• 2008

Colloidal solutions of crystalline PbSe nanoparticles have been synthesized by hot solution chemical process using PbO in oleic acid and tributylphosphine (TBP) bonded selenium. The use of TBP as a capping agent along with oleic acid gives a very good yield (around 10% at 180 ${^{\circ}C}$) with an average diameter of particle of about < 6.6 nm. The effects of temperature on size and production yield of PbSe quantum dots are studied. Xray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM) and UV/VIS/NIR absorption spectroscopy were used to characterize the samples.

• Journal of Korean Society of Environmental Engineers
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• v.28 no.5
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• pp.563-572
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• 2006

In order to propose optimum in-situ treatment for reducing phosphorous release from sediment of stationary lakes, a series of column tests were performed. The sediment used in experiment was very fine clay with a mean grain site $7.7{\phi}$ and high $C_{org}$ contents(2.4%). Phosphorous releases were evaluated in two ways : in lake water(with microbial effect) and in distilled water(without microbial effect). As in-situ capping material, sand and loess were used while Fe-Gypsum and $SiO_2$-Gypsum were used for in-situ chemical treatment. In case of lake water considering the effect of microorganism, phosphorous concentration rapidly decreased in the early stage of experiment but it was gradually increased after 10 days. Flux of phosphorous release for control was $3.0mg/m^2{\cdot}d$. Whereas, those for sand layer capping(5 cm) and loess layer capping(5 cm) were $2.5mg/m^2{\cdot}d\;and\;1.8mg/m^2{\cdot}d$, respectively because the latter two were not consolidated sufficiently. For Fe-gypsum and $SiO_2$-gypsum the fluxes were $1.4mg/m^2{\cdot}d$ which meant that reduction efficiency of phosphorous release was more than 40% higher than that of control. The case capping with complex layer was $1.0mg/m^2{\cdot}d$, which showed high reduction efficiency over 60%. The addition of gypsum($CaSO_4{\cdot}2H_2O$) into the sediment reduced release of Phosphorus from the sediments. Gypsum acted as a slow-releasing source of sulphate in sediment, which enhanced the activity of SRB(sulfate reducing bacteria) and improved the overall mineralization rate of organic matter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.25-28
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• 2004

Photocurrent spectrum, photoresponse, and I-V measurements were made for close-packed HgTe nanoparticles without organic capping materials to investigate their photocurrent characteristics in the infrared range. In absorption and photoluminescence (PL) spectra taken for the close-packed nanoparticles film, the wavelengths of exciton peaks was red-shifted, compared with organic capped HgTe nanoparticles dispersed in solution. This red-shift is caused by the lessening of the exciton binding energy. The I-V curves and photoresponse for the close-packed nanoparticles film reveal their dark current and fast photoresponse with no current decay, respectively. The observation suggests that the HgTe nanoparticles are a very prospect material applicable for photodetectors in the whole IR range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.84-87
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• 2003

HgTe quantum dots(QDs) were synthesized in aqueous solution by colloidal method. The absorption and photoluminescence(PL) spectrum of the synthesized HgTe QDs revealed the strong exitonic peak in the IR region. And the photocurrent measurement of colloidal QDs are performed using IR light source. The lineshape of the wavelength dependent intensity of photocurrent was very similar to the absorption spectrum, indicating the charges generated by the absorption of photons give direct contribution to photocurrent. The channels of dark current are supposed $H_2O$ containing in thiol by the remarkable drop of current at the state of vacuum. It was thought that the proper passivation layer on the top of HgTe film reduce the dark current and the adequate choice of capping material improves the efficiency of the photocurrent in the HgTe QDs. This study suggests that HgTe QDs are very prospective materials for optoelectronics including photodetectors in the IR range.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of $25{\mu}m$ and $3700{\mu}m$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.205-208
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• 2001

Steady state and transient thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage for microwave oven. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally copper wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin and epoxy with a thickness of 25$\mu\textrm{m}$ and 3,700$\mu\textrm{m}$, respectively. The chip size, thickness and material properties were very important factor for high voltage diode package. And also, thermal stress value was highest in the edge of diode and solder. So, design of edge in silicon was very important to thermal stress.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.281.1-281.1
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• 2013

Shape control of gold nanocrystal is still one of the most important challenges remaining to achieve geometry dependent properties. Thus far, several strategies have been developed to control the shape of nanoparticles, such as adding capping agents and diverse additives or adjusting the temperature and pH. Here, we used an already established seed-mediated method that allowed us to focus on controlling the growth stage. Cetyltrimethylammonium bromide (CTAB) and ascorbic acid (AA) were used as the ligand and the reducing agent, respectively, without using any additional additives during the growth stage. We investigated how the relative ratio of CTAB and AA concentrations could be a major determinant of nanoparticle shape over a wide concentration range of CTAB and AA. As a result, a morphology diagram was constructed experimentally that covered the growth conditions of rods, cuboctahedra, cubes, and rhombic dodecahedra. The trends in the morphology diagram emphasize the importance of the interplay between CTAB and AA. Furthermore, high-index faceted gold nanocrystal was obtained by two step seeded growth. Already synthesized cubic particles developed into hexoctahedral nanocrystal consisting of 48 identical {321} facets, which indicates that the growth of gold nanocrystal is affected by initial morphology of seed particles. The hexoctahedral gold nanoparticles can be used in catalysis and optical applications which exploiting their unique geometry. Our research can provide useful guidelines for designing various facetted geometries.

• International Journal of Oral Biology
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• v.37 no.2
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• pp.77-83
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• 2012

We investigated the pulpal response to direct pulp capping in rat molar teeth using mineral trioxide aggregate (MTA) and calcium hydroxide (CH). A palatal cavity was prepared in rat maxillary molar teeth. Either MTA or CH was placed on the exposed pulp and all cavities were restored with composite. Rats were sacrificed for histological evaluation after 12 hours and at 2, 7, 14 and 21 days. In both the MTA and CH groups, reparative dentin formation was clearly observed on histology after 14 days. The MTA-capped pulps were found to be mostly free from inflammation, and hard tissue of a tubular consistent barrier was observed. In contrast, in CH-capped teeth, excessive formation of reparative dentin toward residual pulp was evident. The pulpal cell response beneath the reparative dentin layer was examined by immunofluorescence using antibodies against DSP. After 2 days, a few DSP immunopositive cells, most of which showed a cuboidal shape, appeared beneath the predentin layer. At 7 days, DSP-immunopositive cells with columnar odontoblast-like cells were seen beneath the newly formed hard tissues. At 14 and 21 days, DSP was more abundant in the vicinity of the odontoblastic process along the dentinal tubules than in the mineralized reparative dentin. The CH group showed strong expression patterns in terms of DSP immunoreactivity. Our results thus indicate that MTA may be a more effective pulp capping material as it induces the differentiation of odontoblast-like cells and the formation of reparative dentin without the loss of residual pulp functions.

• Journal of the Korean Electrochemical Society
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• v.10 no.2
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• pp.94-103
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• 2007

The transition of interconnection metal from aluminum alloy to copper has been introduced to meet the requirements of high speed, ultra-large scale integration, and high reliability of the semiconductor device. Since copper, which has low electrical resistivity and high resistance to degradation, has different electrical and material characteristics compared to aluminum alloy, new related materials and processes are needed to successfully fabricate the copper interconnection. In this review, some important factors of multilevel copper damascene process have been surveyed such as diffusion barrier, seed layer, organic additives for bottom-up electro/electroless deposition, chemical mechanical polishing, and capping layer to introduce the related issues and recent research trends on them.

• Korean Journal of Materials Research
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• v.33 no.11
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.