• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.4
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• pp.592-597
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• 2015

3D-IC is a novel semiconductor packaging technique stacking dies to improve the performance as well as the overall size. TSV is ideal for 3D-IC because it is convenient for stacking and excellent in electrical characteristics. However, due to high-density and micro-size of TSVs, they should be tested with a non-invasive manner. Thus, we introduce a TSV test method on test prober without a direct contact in this paper. A capacitive coupling effect between a probe tip and TSV is used to discriminate small TSV faults like voids and pin-holes. Through EM simulation, we can verify the size of eye-patterns with various frequencies is good for TSV test tools and non-contact test will be promising.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.203-203
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• 2013

Low pressure plasmas play a key role in many areas including electronic, aerospace, automotive, biomedical, and toxic waste management industries, and the advantages of the plasma are well known the processing procedure is established. However, the insight behavior of the discharges remains a mystery, even though a simple geometry as capacitive discharges. In this work, we measured RF power dissipation in capacitively coupled plasma (CCP) at various experiment conditions with potential probe and RF current probe. Through the results, we will have a clearer view of the inner nature of the CCP.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.12
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• pp.1300-1305
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• 2014

Equivalent circuits for the waveguide probe with H-shaped small aperture, as a key ingredient of near field microwave microscope, is described along with a working principle of the probe. Small rectangular or circular aperture in comparison with the wavelength behaves like the inductive element. So adding the ridged structure (corresponding to capacitive component) to the small aperture allows the transmission resonance to occur. For verification, we represents the equivalent circuit descriptions for the two types, ridged aperture and cavity types. The values of obtained by use of the equivalent circuit approaches are compared with those obtained by use of the available numerical software. The results are also experimentally verified.

• Journal of the Korean Society for Marine Environment & Energy
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• v.15 no.1
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• pp.19-21
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• 2012

The engine oil life of internal combustion engine is shorted by the thermal effect and that causes air pollution. In order to measure the status of engine oil accurately, the exchange of new oil extends the life of combustion engine and reduces environmental pollution. Capacitance probes, such as engine oil and fluids can be used to measure the dielectric constant. In this paper, the degradation of engine oil varies depending on the degree of dielectric properties was analyzed. Depending on the state of the oil, the variant capacitance of the probe was measured by LCR Meter, respectively, and then the permittivity of oil was calculated. In addition, according to the size of the probe by measuring the change in capacitance measurement, accuracy of dielectric constant are presented. According to oil contaminated with the more increase in dielectric constant, we can decide that contaminated oil is available.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.31B no.7
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• pp.101-107
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• 1994

In this work a scanning capacitance microscopy(SCaM) by stage driving is proposed and presented some of the experimental results.SCaM is a microscope which scans a surface of materials mechanically in two or two point five dimensions by a capacitance probe with a few tenth $\mu\textrm{m}$ ize tip, and display images of the surface shape or capacitive distribution. The present target of the SCaM is 0.1$\mu\textrm{m}$ resolution power which exceeds that of optical microscope. This will become a powerful tool for inspecting ULSI pattern etched by X-ray biological data etc. The experimental system is composed based on a VHD video disk which captures the capacitance changes of the video disk surface and converts it into video signal.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.76.2-76.2
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• 2015

I will present my research group's recent investigation on how the localized plasmon of a nanoparticle interacts with another plasmon, and with nearby molecules. First, I will demonstrate the use of scattering-type scanning near-field microscopy (s-SNOM) to directly visualize the capacitive / conductive coupling in dimeric nanoparticles and heterometallic nanorods. Second, I will talk about the use of gap-plasmons to locally induce photochemical reactions, and to follow chemical kinetics of individual organic molecules using the gap-plasmons. As a last topic, I will talk about the use of near-field coupling between a scanning probe and graphenes to visualize / identify the stacking domains (e. g., ABA versus ABC-type stacking in triple layer) hidden in multilayer graphenes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.2
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• pp.95-100
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• 1998

A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.297-300
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• 1990

The measurement of very fast transients generated by disconnecting switches in gas-insulated switchgear(GIS) have to deal with the problems such as reliability, interference pich-up, optimal design of high voitage equipments. This paper presents a new developed voltage sensor to measure the very fast transients, the basic theory of the measuring method, the design, structure of planar capacitive voltage probe are described. Finally the examples of modelling tests on an actual site GIS are discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.508-508
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• 2012

CST microwave studio is used to simulate the plasma profile of the 450mm CCP source. Standing wave effect becomes important at the high frequency as the electrode radius increases. To solve plasma non-uniformity problem, we designed multi electrode chamber to decreasing standing wave effect. Simulation showed the ratio of input power of each electrode is related with electric field strength. The multi electrode was constructed and measured by 2D probe arrays using floating harmonic method. Uniformity of 450 mm CCP was changed by the ratio of input power of each electrode. We described this dependence with circuit model.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.2-136.2
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• 2015

반도체 제조는 chip의 성능 향상 및 단가 하락을 위해 지속적으로 pattern size가 nano size로 감소해 왔고, capacitor 용량은 증가해 왔다. 이러한 현상은 contact hole의 aspect ratio를 지속적으로 증가시킨바, 그에 따라 최적의 HARC (high aspect ratio contact)을 확보하는 적합한 dry etch process가 필수적이다. 그러나 HARC dry etch process는 많은 critical plasma properties 에 의존하는 매우 복잡한 공정이다. 따라서, critical plasma properties를 적절히 조절하여 higher aspect ratio, higher etch selectivity, tighter critical dimension control, lower P2ID과 같은 plasma characteristics을 확보하는 것이 요구된다. 현재 critical plasma properties를 제어하기 위해 다양한 plasma etching 방법이 연구 되어왔다. 이 중 plasma를 낮은 kHz의 frequency에서 on/off 하는 pulsed plasma etching technique은 nanoscale semiconductor material의 etch 특성을 효과적으로 향상 시킬 수 있다. 따라서 본 실험에서는 dual-frequency capacitive coupled plasma (DF-CCP)을 사용하여 plasma operation 동안 duty ratio와 pulse frequency와 같은 pulse parameters를 적용하여 plasma의 특성을 각각 제어함으로써 etch selectivity와 uniformity를 향상 시키고자 하였다. Selective SiO2 contact etching을 위해 top electrode에는 60 MHz pulsed RF source power를, bottom electrode에는 2MHz pulse plasma를 인가하여 synchronously pulsed dual-frequency capacitive coupled plasma (DF-CCP)에서의 plasma 특성과 dual pulsed plasma의 sync. pulsing duty ratio의 영향에 따른 etching 특성 등을 연구 진행하였다. 또한 emissive probe를 통해 전자온도, OES를 통한 radical 분석으로 critical Plasma properties를 분석하였고 SEM을 통한 etch 특성분석과 XPS를 통한 표면분석도 함께 진행하였다. 그 결과 60%의 source duty percentage와 50%의 bias duty percentage에서 가장 향상된 etch 특성을 얻을 수 있었다.