• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.790-793
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• 2007

This study investigated the effect of $H_2$ upon the growth of CNTs by changing the ratios of H2 to Ar during the growth using $C_2H_2$. With higher contents of $H_2$ in Ar, CNTs became longer and thinner, resulting in their higher aspect ratios.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.373-376
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• 2016

Transition metal dichalcogenides (TMDs) such as $MoS_2$ is the thinnest semiconductor, exhibits promising prospects in the applications of optoelectronics, catalysis and hydrogen storage devices. Uniform and high quality $MoS_2$ is highly desirable in large area for its applications on commercial scale and fundamental research. Many experimental techniques i.e CVD have been developed to successfully synthesis $MoS_2$ on large scale, here in this work atomistic detail to understand the growth mechanism is addressed which was greatly overlooked. Here based on first principles calculation we found that polarity of seeding promter (crystal violet considerd in this work) controls the growth mechanism. It is also found that molybdenum destroys the precursor while sulfur adsorption with precursor is favorable.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of the Korean institute of surface engineering
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• v.36 no.3
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• pp.234-241
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• 2003

SiC nanorod was synthesized directly on Si substrate using hexamethyldisilabutane and Fe catalyst with (111) direction. Fe acted a liquid catalyst at growth condition. Grown SiC nanorod has about 30nm diameter and $5{\mu}m$ length. SiC nanorod growth was divided by trro regions with diameter distribution. This diameter distribution were occurred by surface deposition at as - grown nanorod's surface by limitation of growth rate. At higher temperature, these division not occurred. Growth temperature and flow rates affected diameter and morphology of nanorods. With increasing flow rate of source gas, nanorod's diameter increased because of deactivation effect. Case of the increasing temperature, growth rate increased so deactivation did not occurred.

• Proceedings of the Korea Crystallographic Association Conference
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• 2007.11a
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• pp.41-41
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• 2007

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.432-432
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• 2008

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.1-6
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• 1995

Polycrystalline Si films have been used in many applications such as thin film transistors(TFT), image sensors and LSI applications. In this research deposition of Si films at low temperatures with remote plasma enhanced CVD from Si2H6-SiF4-H2 on SiO2 was studied and their crystallinity was investigated. It was condluded that growth of crystalline Si films was favorable with (1) low Si2H6 flow rates, (2) moderate plasma power, (3) moderate SiF4 flow rates, (4) moderate substrate temperature, and (5) suitable method of surface cleaning.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.120-121
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• 2004

YBaCuO thick films were fabricated by plasma enhanced chemical vapor deposition, and the crystallinity and the superconducting properties were investigated. The growth temperature to obtain the thick films was decreased by around 150$^{\circ}C$ due to plasma enhancement. The zero resistivity temperatures for films grown at 590$^{\circ}C$ and 620$^{\circ}C$ were 55 and 80 K, respectively.

• Korean Chemical Engineering Research
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• v.43 no.2
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• pp.215-221
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• 2005

A Fe-containing mesoporous silica (Fe-MCM-41) in which part of Si in the framework was replaced by Fe(Si-O-Fe) has been successfully prepared using $Fe^{3+}$ salt by a direct synthesis route. Physical properties of the material were characterized by XRD, $N_2$ adsorption, SEM/TEM, UV-vis and FT-IR spectroscopies. Fe-MCM-41 exhibited high catalytic activity in phenol hydroxylation using $H_2O_2$ as oxidant, giving phenol conversion of ca. 60% at $50^{\circ}C$ [phenol : $H_2O_2$ = 1:1, water solvent]. Fe-MCM-41 was also applied to the growth of CNTs, utilizing a thermal-CVD reactor using acetylene gas, which demonstrated that multi-wall CNTs could be prepared efficiently using the Fe-MCM-41 catalyst.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1574-1576
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• 2003

Carbon nanotubes (CNTs) were grown on the TiN-coated silicon substrate with different thickness of Ni and Co catalysts layer at $600^{\circ}C$ using inductively coupled plasma-chemical vapor deposition (ICP-CVD). The Ni and Co catalysts were formed using the RF magnetron sputtering system with various deposition times. It was found that the growth of CNTs was strongly influenced by the surface morphology of Ni and Co catalysts. With increasing deposition time, the thickness of catalysts increased and the grain boundary size of catalysts increased. The surface morphology of catalysts and CNTs were elucidated by SEM. The Raman spectrum further confirmed the graphitic structure of the CNTs. The turn-on field of CNTs grown on Ni and Co catalysts was about 2.7V/pm and 1.9V/pm respectively. Field emission current density of CNTs grown on Ni and Co catalysts was measured as $11.67mA/cm^2$ at $5.5V/{\mu}m$ and $1.5mA/cm^2$ at $5.5V/{\mu}m$ respectively.