• 한국표면공학회지
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• 제32권3호
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• pp.385-388
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• 1999

Electron field emission properties from various CVD diamond films were studied. Diamond films were synthesized by microwave plasma CVD at 1173K and at 673K substrates temperature and pulse microwave plasma CVD at 1173K. B-doped diamond film was synthesized by microwave plasma CVD at 1173K also. Estimation by SEM, both the non-doped diamond film and B-doped diamond film which were synthesized at 1173K substrate temperature were $2~3\mu\textrm{m}$ in diameter and nucleation densities were $10^{8}{\;}numbers/\textrm{cm}^2$ order. The diamond film synthesized at 673K was $0.2\mu\textrm{m}$ in diameter and nucleation densities was 109 numbers/cm2 order. The diamond film synthesized by pulse microwave plasma CVD at 1173K was $0.2\mu\textrm{m}$ in diameter and nucleation density was $10^{9}{\;}numbers/\textrm{cm}^2$ order either. From the result of electron field emission measurement, electron field emission at $20V/\mu\textrm{m}$ from CVD diamond film synthesized by pulse microwave plasma CVD was $37.3\mu\textrm{A}/\textrm{cm}^2$ and the diamond film showed the best field emission property comparison with other CVD diamond.

• Journal of Radiation Protection and Research
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• 제43권4호
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• pp.131-136
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• 2018

Background: We investigated the current characteristics of a thin-film Ag electrode on a chemical vapor deposition (CVD) diamond. The CVD diamond is widely recognized as a radiation detection material because of its high tolerance against high radiation, stable response to various dose rates, and good sensitivity. Additionally, thin-film Ag has been widely used as an electrode with high electrical conductivity. Materials and Methods: Considering these properties, the thin-film Ag electrode was deposited onto CVD diamonds with varied deposition thicknesses (${\fallingdotseq}50/98/152/257nm$); subsequently, the surface thickness, surface roughness, leakage current, and photo-current were characterized. Results and Discussion: The leakage current was found to be very low, and the photo-current output signal was observed as stable for a deposited film thickness of 98 nm; at this thickness, a uniform and constant surface roughness of the deposited thin-film Ag electrode were obtained. Conclusion: We found that a CVD diamond radiation detector with a thin-film Ag electrode deposition thickness close to 100 nm exhibited minimal leakage current and yielded a highly stable output signal.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1114-1119
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• 2004

The photodepositioned tungsten film by laser CVD has been carried out the taping test with scotch tape over 10 times. As a result, it exhibited strong adhesion to the under-film such as ITO and SiNx patterned on the LCD substrate. However, it was seriously attacked by alkaline solution used for removing polyimide. And a thickness of laser CVD tungsten film had a close relation to a speed of laser scanning. Also we have improved the success rate of a laser CVD repair with making two pairs of contact hole structure and decreasing laser scanning speed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 정기총회 및 추계학술대회 논문집 학회본부
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• pp.231-233
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• 1993

This paper proposes a new $SiO_2$ film condenser fabrication technique by photo-chemically deposited $SiO_2$ films by Laser CVD. Laser CVD is noticeable that film deposition can be done at low temperature below $300^{\circ}C$ with less damage. After film deposition, the characteristics of Laser CVD $SiO_2$ films and $SiO_2$ film condenser is evaluated.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1439-1441
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• 1994

This paper propose a new $Ta_2O_5$ film fabrication technique by Laser CVD. Laser CVD is noticable that film formation can be done at low temperature with less damage. After film deposition, the characteristics of Laser CVD $Ta_2O_5$ film is evaluated.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 1997년도 제25회 춘계학술대회
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• pp.69-73
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• 1997

Microwave Plasma assisted CVD (Chemical Vapor Deposition) and DC Plasma CVD were used to prepare thin and thick diamond film, respectively. Diamond coated silicon nitride and fiee standing diamond thick film were eroded by silicon carbide particles. The velocity of the solid particle was about 220m/sec. Phase transformation and the other crack formation were investigated by using Raman spectroscopy and microscopy.

• 한국재료학회지
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• 제26권9호
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• pp.486-492
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• 2016

Tungsten (W) thin film was deposited at $400^{\circ}C$ using pulsed chemical vapor deposition (pulsed CVD); film was then evaluated as a nucleation layer for W-plug deposition at the contact, with an ultrahigh aspect ratio of about 14~15 (top opening diameter: 240~250 nm, bottom diameter: 98~100 nm) for dynamic random access memory. The deposition stage of pulsed CVD has four steps resulting in one deposition cycle: (1) Reaction of $WF_6$ with $SiH_4$. (2) Inert gas purge. (3) $SiH_4$ exposure without $WF_6$ supply. (4) Inert gas purge while conventional CVD consists of the continuous reaction of $WF_6$ and $SiH_4$. The pulsed CVD-W film showed better conformality at contacts compared to that of conventional CVD-W nucleation layer. It was found that resistivities of films deposited by pulsed CVD were closely related with the phases formed and with the microstructure, as characterized by the grain size. A lower contact resistance was obtained by using pulsed CVD-W film as a nucleation layer compared to that of the conventional CVD-W nucleation layer, even though the former has a higher resistivity (${\sim}100{\mu}{\Omega}-cm$) than that of the latter (${\sim}25{\mu}{\Omega}-cm$). The plan-view scanning electron microscopy images after focused ion beam milling showed that the lower contact resistance of the pulsed CVD-W based W-plug fill scheme was mainly due to its better plug filling capability.

• 한국재료학회지
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• 제15권7호
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• pp.465-472
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• 2005

Preparation of copper film on PET substrate was carried out by cyclic operation of RF-magnetron­sputtering under continuous operation of ECR-CVD. The purpose of this study is aimed to an increase in deposition rate with keeping excellent adhesion between copper film and PET. In order to optimize the sputtering time under continuous ECR-CVD, cyclic operation concept is employed. By changing parameters of cyclic operation such as split of e and cycle time of A, the characteristics and thickness of the deposited copper film are controlled. As $\theta$ value increase, film thickness could confirm to increase and its surface resistivity value decreases. The highest adhesive strength appears at $\theta=0.33$ and cycle time of 30 min. The uniformity of copper film shows $5\%$ in our experimental range.

• 한국정보전자통신기술학회논문지
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• 제12권3호
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• pp.218-223
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• 2019

높은 CVD 그래핀저항으로 인한 낮은 발열효과를 해결하기 위해 다층으로 그래핀을 적층하여, 저저항의 광학특성이 우수한 투명 면상 발열시스템을 구현하였다. 제작한 CVD 그래핀의 발열필름으로 $300{\times}400{\times}5mm$ 발열체를 제작하고, 효율적인 전력을 구동하기 위해 PWM 제어를 통한 회로를 구성하여 시스템을 구현하였다. 발열체로 사용한 4층의 CVD 그래핀 필름의 평균 면 저항 측정값은 $85.5{\Omega}/sq$이다. 따라서 저 저항의 CVD 그래핀의 구현 방법으로 열전사의 적층의 방법은 타당하다. 발열시험 결과, CVD 그래핀을 이용한 저저항 투명 면상 발열 시스템의 평균 발열상승은 $10^{\circ}C/min$ 이고, 86.44%의 CVD 그래핀 필름의 광투과율을 갖음을 보여준다. 따라서 제시한 발열 시스템은 대형창 유리 및 자동차 발열유리로서 적용가능하다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 추계 학술발표 강연 및 논문 개요집
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• pp.43-44
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• 1994