• Journal of Institute of Control, Robotics and Systems
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• v.11 no.4
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• pp.314-321
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• 2005

In this paper an intelligence embedding quadruped pet robot is described. It has 15 degrees of freedom and consists of various sensors such as CMOS image, voice recognition and sound localization, inclinometer, thermistor, real-time clock, tactile touch, PIR and IR to allows owners to interact with pet robot according to human's intention as well as the original features of pet animals. The architecture is flexible and adopts various embedded processors for handling sensors to provide modular structure. The pet robot is also used for additional purpose such like security, gaming visual tracking, and research platform. It is possible to generate various actions and behaviors and to download voice or music files to maintain a close relation of users. With cost-effective sensor, the pet robot is able to find its recharge station and recharge itself when its battery runs low. To facilitate programming of the robot, we support several development environments. Therefore, the developed system is a low-cost programmable entertainment robot platform.

• Proceedings of the Korea Information Processing Society Conference
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• 2002.04b
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• pp.1285-1288
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• 2002

Bluetooth wireless technology is a publicly available specification proposed for Radio Frequency (RF) communication for short-range and point-to- multipoint voice and data transfer. It operates in the 2.4GHz ISM(Industrial, Scientific and Medical) band and offers the potential for low-cost, broadband wireless access for various mobile and portable devices at range of about 10 meters. In this paper, we describe the structure and the test results of the bluetooth baseband module we have developed. This module was developed based on IP reuse. So Interface of each module such as link controller UART, and audio CODEC is designed based on ARM7 comfortable processor. We also considered various interfaces of related external chips. The fully synthesizable baseband module was fabricated in a $0.25{\mu}m$ CMOS technology occupying $2.79{\times}2.8mm^2$ area including the ARM TDMI processor. And a FPGA implementation of this module is tested for file and bit-stream transfers between PCs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.180-183
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• 2003

The monolayer of oxygen atoms sandwitched between the adjacent nanocrystalline silicon layers was formed by ultra high vacuum-chemical vapor deposition (UHV-CVD). This multi-layer Si-O structure forms a new type of superlattice, semiconductor-atomic superattice (SAS). According to the experimental results, high-resolution cross-sectional transmission electron microscopy (HRTEM) shows epitaxial system. Also, the current-voltage (I-V) measurement results show the stable and good insulating behavior with high breakdown voltage. It is apparent that the system may form an epitaxially grown insulating layer as possible replacement of silicon-on-insulator (SOI), a scheme investigated as future generation of high efficient and high density CMOS on SOI.

• Vacuum Magazine
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• v.3 no.3
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• pp.15-18
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• 2016

In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.

• The Journal of Korea Robotics Society
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• v.16 no.4
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• pp.291-298
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• 2021

In this study, we present a multi-sensor module for snake robot searching survivors in a narrow space. To this end, we integrated five sensor systems by considering the opinions of the first responders: a gas sensor to detect CO₂ gases from the exhalation of survivors, a CMOS camera to provide the image of survivors, an IR camera to see in the dark & smoky environment, two microphones to detect the voice of survivors, and an IMU to recognize the approximate location and direction of the robot and survivors. Furthermore, we integrated a speaker into the sensor module system to provide a communication channel between the first responders and survivors. To integrated all these mechatronics systems in a small, compact snake head, we optimized the positions of the sensors and designed a stacked structure for the whole system. We also developed a user-friendly GUI to show the information from the proposed sensor systems visually. Experimental results verified the searching function of the proposed sensor module system.

• ETRI Journal
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• v.46 no.3
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• pp.550-563
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• 2024

A novel inductance simulation circuit employing only two dual-output voltage-differencing buffered amplifiers (DO-VDBAs) and a single capacitance (grounded) is proposed in this paper. The reported configuration is a purely resistor-less realization that provides electronically controllable realized inductance through biasing quantities of DO-VDBAs and does not rely on any constraints related to matched values of parameters. This structure exhibits excellent behavior under the influence of tracking errors in DO-VDBAs and does not exhibit instability at high frequencies. The simple and compact metal-oxide semiconductor (MOS) implementation of the DO-VDBAs (eight MOS per DO-VDBA) and adoption of grounded capacitance make the proposed circuit suitable for on-chip realization from the perspective of chip area consumption. The function of the pure grounded inductance is validated through high pass/bandpass filtering applications. To test the proposed design, simulations were performed in the PSPICE environment. Experimental validation was also conducted using the integrated circuit CA3080 and operational amplifier LF-356.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Journal of Korea Multimedia Society
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• v.13 no.7
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• pp.943-949
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• 2010

This paper presents some improvements on VLSI implementation of lifting-based 9/7 wavelet transform by optimization hardware multiplication. The proposed solution requires less logic area and power consumption without performance loss compared to previous wavelet filter structure based on lifting scheme. This paper proposes a better approach to the hardware implementation using Lefevre algorithm based on extensions of Pattern search methods. To compare the proposed structure to the previous solutions on full multiplier blocks, we implemented them using Verilog HDL. For a hardware implementation of the two solutions, the logical synthesis on 0.18 um standard cells technology show that area, maximum delay and power consumption of the proposed architecture can be reduced up to 51%, 43% and 30%, respectively, compared to previous solutions for a 200 MHz target clock frequency. Our evaluation show that when design VLSI chip of lifting-based 9/7 wavelet filter, our solution is better suited for standard-cell application-specific integrated circuits than prior works on complete multiplier blocks.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.6
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• pp.479-486
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• 2021

In this paper, an ultra small phase locked loop (PLL) with a single capacitor loop filter has been proposed by adding a signal sensing circuit (SSC). In order to extremely reduce the size of the PLL, the passive element loop filter, which occupies the largest area, is designed with a very small single capacitor (2pF). The proposed PLL is designed to operate stably by the output of the internal negative feedback loop including the SSC acting as a negative feedback to the output of the single capacitor loop filter of the external negative feedback loop. The SSC that detects the PLL output signal change reduces the excess phase shift of the PLL output frequency by adjusting the capacitance charge of the loop filter. Although the proposed structure has a capacitor that is 1/78 smaller than that of the existing structure, the jitter size differs by about 10%. The PLL is designed using a 1.8V 180nm CMOS process and the Spice simulation results show that it works stably.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.12
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• pp.54-60
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• 2007

This paper proposes a built-in-self-repair (BISR) structure using 2-dimensional spare memory to effectively self-repair faults of an embedded memory. In case of multiple faults in the same row (column) of an embedded memory, the previous method using 1-D spare column (row) memory needs the same number of spare memory columns (rows) as the number of faults to self-repair them. while the new method using 2-D spare memory needs only one spare row (column) to self-repair them. Also, the virtual divided memory is adopted to be able to self-repair using not a full spare column memory but the only partial spare column memory corresponding to the faults. A self-repair circuit with $64\times1-bit$ core memory and $2\times8$ 2-D spare memory is designed. And the circuit includes a built-in-self-test block using the 13N March algorithm. The circuit has been implemented using the $0.25{\mu}m$ MagnaChip CMOS process and has $1.1\times0.7mm^2$ chip area with 10,658 transistors.