• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1120-1122
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• 1995

This paper presents a 2-stage, simple, power-efficient 3V CMOS operational amplifier and its equation based design optimization. Because of its simple structure, it is very suitable as a VLSI library cell in analog/digital mixed-mode systems. The op-amp, which contains a constant-$g_m$ rail-to-rail input stage and a simple feedforward class-AB rail-to-rail output stage, is analyzed and the results are presented in the form of design equations and procedures, which provide an insight into the trade-offs among performance requirements. The results of SPICE simulations are shown to agree very welt with the use of design equations.

• Journal of Navigation and Port Research
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• v.35 no.4
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• pp.299-302
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• 2011

In this letter, the effect of quality factor on center frequency deviation in miniaturized coupled line bandpass filter (BPF) with diagonally end-shorted at their opposite sides and lumped capacitors is theoretically analyzed. The miniaturized BPF of a two-stage structure with two types of quality factors in standard CMOS process was designed and manufactured at 5.5 GHz. The die area of BPF was $1.44{\times}0.41\;mm^2$. The measured center frequency of BPF with a quality factor of 4.9 was deviated from 5.5 GHz to 4.7 GHz. The one with 14.8 was shifted to 5GHz. The theoretical and measured results validate that quality factor influences the center frequency shift of BPF.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.443-444
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• 2008

A double-balanced frequency up-converter using the Gilbert cell structure has been designed with the TSMC $0.18\;{\mu}m$ CMOS library. The frequency up-converter consists of a Mixer core and IF / LO balun. Frequency Up-converter exhibits a 3.4 dB conversion gain with a - 7.6 dBm $P_{1dB}$ for IF power of -10 dBm and LO power of 0 dBm inputs. It also exhibits 92.2 % modulation depth as a ASK modulator.

• ETRI Journal
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• v.28 no.2
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• pp.175-181
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• 2006

A new CMOS voltage-controlled fully-differential transconductor is presented. The basic structure of the proposed transconductor is based on a four-MOS transistor cell operating in the triode or saturation region. It achieves a high linearity range of ${\pm}\;1\;V$ at a 1.5 V supply voltage. The proposed transconductor is used to realize a new fully-differential Gm-C low-pass filter with a minimum number of transconductors and grounded capacitors. PSpice simulation results for the transconductor circuit and its filter application indicating the linearity range and verifying the analytical results using $0.35\;{\mu}m$ technology are also given.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.7
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• pp.1726-1733
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• 1996

A 3V-50MHz analog CMOS continuous-time current-mode filter with a negative resistance load(NRL) is proposed. In order to design a current-mode current integrator, a modified basic current mirror with a NRL to increase the output resistance is employed. the inherent circuit structure of the designed NRL current integrator, which minimizes the internal circuit nodes and enhances the gain bandwidth product, is capable of making the filter operate at the high frequency. The third order Butterworth low pass filter utilizing the designed NRL current integrator is synthesized and simulated with a 1.5.mu.m CMOS n-well proess. Simulation result shows the cutoff frequency of 50MHz and power consumption of 2.4mW/pole with a 3V power supply.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.4
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• pp.672-678
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• 1994

A design of 5th-order Elliptic OTA-C filter for operation at 4.2MHz is presented. the filter structure is composed entirely of five OTAs(Operational transoonductance Amplifiers), one buffer and seven capacitors. To prevent decreasing of frequency charaoteristios due to the parasitic effeots of OTA and buffer, the design considering of parasitic capacitance and finite resistane of OTA and fuffer is pertormed. As the result of the simulation using SPICE with $2{\mu}m$ CMOS parameters, The performances were found to be essentially within the specifications` less than 0.25dB passband attenuation, 30dB stopband attenuation and 4.2MHz cut-off frequency were satisfactorily obtained. The number of elements is also considerably reduced than other design methods.

• Journal of Navigation and Port Research
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• v.31 no.9
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• pp.759-762
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• 2007

A novel miniaturized CMOS C-Band bandpass filter based on diagonally end-shorted coupled lines and interdigital capacitors is proposed. The utilized coupled lines structure reduced the configuration in size, as small as a few degrees. Moreover, the characteristic of interdigital capacitor, relatively high Q and good capacitance tolerance, accounts for the satisfied performance of this new filter. A two-stage bandpass filter was designed and fabricated with chip surface area only $1.02{\times}1.4\;mm^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.102-103
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• 2007

The electrical characteristics of high power LIGBT implemented by CMOS process are described and compared with those of high voltage LDMOSFET with the same device dimensions. LIGBT has exhibited approximately 8 times superior current drive capability than LDMOSFET. The proposed p+/n+ anode structure resulted in the significant increase of on-state breakdown voltage of LIGBT. Therefore, LIGBT suggested in this paper is one of the promising candidate for smart power IC applications.

• Journal of IKEEE
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• v.23 no.2
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• pp.403-406
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• 2019

We propose a low-loss on-chip transformer using an auxiliary primary part (APP) for an output matching network for fully integrated CMOS power amplifiers. The APP is designed using a fifth metal layer while the primary and secondary parts are designed using a sixth metal layer with a width smaller than that of the primary and secondary parts of the transformer to minimize the substrate loss and the parasitic capacitance between the primary and secondary parts. By adapting the APP in the on-chip transformer, we obtain an improved maximum available gain value without the need for any additional chip area. The feasibility of the proposed APP structure is successfully verified.

• ETRI Journal
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• v.45 no.4
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• pp.690-703
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• 2023

Multistage amplifiers have become appropriate choices for high-speed electronics and data conversion. Because of the large number of high-impedance nodes, frequency compensation has become the biggest challenge in the design of multistage amplifiers. The new compensation technique in this study uses two differential stages to organize feedforward and feedback paths. Five Miller loops and a 500-pF load capacitor are driven by just two tiny compensating capacitors, each with a capacitance of less than 10 pF. The symbolic transfer function is calculated to estimate the circuit dynamics and HSPICE and TSMC 0.18 ㎛. CMOS technology is used to simulate the proposed five-stage amplifier. A straightforward iterative approach is also used to optimize the circuit parameters given a known cost function. According to simulation and mathematical results, the proposed structure has a DC gain of 190 dB, a gain bandwidth product of 15 MHz, a phase margin of 89°, and a power dissipation of 590 ㎼.