• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.10
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• pp.173-184
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• 1994

BiCMOS circuits mixed with CMOS and bipolar technologies show peculiar fault characteristics that are different from those of other technoloties. It has been reported that because most of short faults in BiCMOS circuits cause logically intermediate level at outputs, current monitoring method is required to detect these faluts. However current monitoring requires additional hardware capabilities in the testing equipment and evaluation of test responses can be more difficult. In this paper, we analyze the characteristics of faults in BiCMOS circuit together with their test methods and propose a new design technique for testability to detect the faults by logic monitoring. An effective method to detect the transition delay faults induced by performance degradation by the open or short fault of bipolar transistors in BiCMOS circuits is presented. The proposed design-for-testability methods for BiCMOS circuits are confirmed by the SPICE simulation.

• Journal of IKEEE
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• v.7 no.2 s.13
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• pp.135-143
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• 2003

This paper describes the design techniques of the data converters for Multiple-Valued Logic(MVL). A 3.3V low power 4 digit CMOS analog to quaternary converter (AQC) and quaternary to analog converter (QAC) mainly designed with the neuron MOS down literal circuit block has been introduced. The neuron MOS down literal architecture allows the designed AQC and QAC to accept analog and 4 level voltage inputs, and enables the proposed circuits to have the multi-threshold properity. Low power consumption of the AQC and QAC are achieved by utilizing the proposed architecture.

• Journal of IKEEE
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• v.8 no.2 s.15
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• pp.161-165
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• 2004

In this paper, an 8bit wave pipelined adder using the static CMOS plus Edge-Sensing Completion Detection Logic is presented. The clockless wave-pipelining algorithm was implemented in the circuit design. The Edge-Sensing Completion Detection (ESCD) in the algorithm is consisted of edge-sensing circuits and latches. Using the algorithm, skewed data at the output of 8bit adder could be aligned. Simulation results show that the adder operates at 1GHz in $0.35{\mu}m$ CMOS technology with 3.3V supply voltage.

• Transactions on Electrical and Electronic Materials
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• v.15 no.6
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• pp.309-314
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• 2014

This work proposes an integrated high frequency divider with an inductive peaking technique implemented in a current mode logic (CML) frequency divider. The proposed divider is composed with a master-slave flip-flop, and the master-slave flip-flop acts as a latch and read circuits which have the differential pair and cross-coupled n-MOSFETs. The cascode bias is applied in an inductive peaking circuit as a current source and the cascode bias is used for its high current driving capability and stable frequency response. The proposed divider is designed with $0.18-{\mu}m$ CMOS process, and the simulation used to evaluate the divider is performed with phase-locked loop (PLL) circuit as a feedback circuit. A divide-by-two operation is properly performed at a high frequency of 20 GHz. In the output frequency spectrum of the PLL, a peak frequency of 2 GHz is obtained witha divide-by-eight circuit at an input frequency of 250 MHz. The reference spur is obtained at -64 dBc and the power consumption is 13 mW.

• Proceedings of the KIEE Conference
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• 2006.10c
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• pp.142-144
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• 2006

In this paper, the Ternary adder and multiplier are implemented by current-mode CMOS. First, we implement the ternary T-gate using current-mode CMOS which have an effective availability of integrated circuit design. Second, we implement the circuits to be realized 2-variable ternary addition table and multiplication table over finite fields GF(3) with the ternary T-gates. Finally, these operation circuits are simulated by Spice under $1.5{\mu}m$ CMOS standard technology, $1.5{\mu}m$ unit current, and 3.3V VDD voltage. The simulation results have shown the satisfying current characteristics. The ternary adder and multiplier implemented by current-mode CMOS are simple and regular for wire routing and possess the property of modularity with cell array.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.302-317
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• 2017

This paper proposes a new full adder design based on pass-transistor logic that offers ultra-low power dissipation and superior variability together with low transistor count. The pass-transistor logic allows device count reduction through direct logic realization, and thus leads to reduction in the node capacitances as well as short-circuit currents due to the absence of supply rails. Optimum transistor sizing alleviates the adverse effects of process variations on performance metrics. The design is subjected to a comparative analysis against existing designs based on Monte Carlo simulations in a SPICE environment, using the 22-nm CMOS Predictive Technology Model (PTM). The proposed ULP adder offers 38% improvement in power in comparison to the best performing conventional designs. The trade-off in delay to achieve this power saving is estimated through the power-delay product (PDP), which is found to be competitive to conventional values. It also offers upto 79% improvement in variability in comparison to conventional designs, and provides suitable scalability in supply voltage to meet future demands of energy-efficiency in portable applications.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.6
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• pp.781-792
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• 2016

This paper presents a new approach to enhance the data retention of logic-compatible embedded DRAMs. The memory bit-cell in this work consists of two logic transistors implemented in generic triple-well CMOS process. The key idea is to use the parasitic junction capacitance built between the common cell-body and the data storage node. For each write access, a voltage transition on the cell-body couples up the data storage levels. This technique enhances the data retention and the read performance without using additional cell devices. The technique also provides much strong immunity from the write disturbance in the nature. Measurement results from a 64-kbit eDRAM test chip implemented in a 130 nm logic CMOS technology demonstrate the effectiveness of the proposed circuit technique. The refresh period for 99.9% bit yield measures $600{\mu}s$ at 1.1 V and $85^{\circ}C$, enhancing by % over the conventional design approach.

• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.4
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• pp.65-72
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• 2013

This paper presents design methodology for Memristor-CMOS circuits and its application to primitive IPs design. We proposed a Memristor model and designed basic elements, Memristor AND/OR gates. The primitive IPs based on a Memristor-CMOS technology is proposed for a Memristive system design. The netlists of IPs are extracted from the layouts of Memristor-CMOS and is verified with SPICE-like Memristor model under $0.18{\mu}m$ CMOS technology. As a result, an example design Memristor-CMOS full adder has only 47.6 % of silicon area compare to the CMOS full-adder.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.811-814
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• 1998

REcent research about current testing($\textrm{I}_{DDQ}$ testing) has been emphasizing that $\textrm{I}_{DDQ}$ testing in addition to the logical voltage testing is necessary to increase the fault coverage. The $\textrm{I}_{DDQ}$. testing can detect physical faults other than the classical stuck-at type fault, which affect reliability. One of the most critical issues in the $\textrm{I}_{DDQ}$ testing is to insert a built-in current sensor (BICS) that can detect abnormal static currents from the power supply or to the ground. This paper presents a new BICS for internal current testing for large CMOS logic circuits. The proposed BICS uses a single phase clock to minimize the hardware overhead. It detects faulty current flowing and converts it into a corresponding logic voltage level to make converts it into a corresponding logic voltage level to make it possible to use the conventional voltage testing techniqeus. By using current mirroring technique, the proposed BICS can work at very high speed. Because the proposed BICS almost does not affects normal operation of CUT(circuit under test), it can be used to a very large circuit without circuit partitioning. By altenating the operational modes, a circuit can be $\textrm{I}_{DDQ}$-tested as a kind of self-testing fashion by using the proposed BICS.

• Journal of IKEEE
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• v.11 no.4
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• pp.129-136
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• 2007

In this paper, a simple but effective Dataline Redundancy Circuit (DRC) is proposed for a dual-port 1T-SRAM embedded in Display ICs. The DRC designed in the dual-port $320{\times}120{\times}18$-bit 1T-SRAM is verified in a 0.18-um CMOS 1T-SRAM process. In the DRC, because its control logic circuit can be implemented by a simple Shift Logic Circuit (SLC) with only an inverter and a NAND that is much simpler than the conventional, it can be placed in a pitch as narrow as a bit line pair. Moreover, an improved version of the SLC is also proposed to reduce its worst-case delay from 12.3ns to 5.9ns by 52%. By doing so, the timing overhead of the DRC can be hidden under the row cycle time because switching of the datalines can be done between the times of the word line setup and the sense amplifier setup. The area overhead of the DRC is estimated about 7.6% in this paper.