• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.176- 184
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• 2010

A low-power inductorless 1:4 DEMUX and a 4:1 MUX for a 90 nm CMOS are presented. The DEMUX can be operated at a speed of 25 Gb/s with the power supply voltage of 1.05 V, and the power consumption is 8.9 mW. The area of the DEMUX core is $29\;{\times}\;40\;{\mu}m^2$. The operation speed of the 4:1 MUX is 13 Gb/s at a power supply voltage of 1.2 V, and the power consumption is 4 mW. The area of the MUX core is $30\;{\times}\;18\;{\mu}m^2$. The MUX/DEMUX mainly consists of differential pseudo-NMOS. In these MUX/DEMUX circuits, logic swing is nearly rail-to-rail, and a low $V_{dd}$. The component circuit is more scalable than a CML circuit, which is commonly used in a high-performance MUX/DEMUX. These MUX/DEMUX circuits are compatible with conventional CMOS logic circuit, and it can be directly connected to CMOS logic gates without logic level conversion. Furthermore, the circuits are useful for core-to-core interconnection in the system LSI or chip-to-chip communication within a multi-chip module, because of its low power, small footprint, and reasonable operation speed.

• Journal of IKEEE
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• v.9 no.1 s.16
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• pp.1-6
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• 2005

This paper proposes a high performance multiplier using CMOS multiple-valued logic circuits. The multiplier based on the Modified Baugh-Wooley algorithm is designed with current-mode CMOS quaternary logic circuits. The multiplier is functionally partitioned into the following major sections: partial product generator block(binary-quaternary logic conversion block), current-mode quaternary logic full-adder block, and quaternary-binary logic conversion block. The proposed multiplier has 4.5ns of propagation delay and 6.1mW of power consumption. This multiplier can easily adapted to the binary system by the encoder and the decoder. This circuit is designed with 0.35um standard CMOS process at 3.3V supply voltage and 5uA unit current. The validity and effectiveness are verified through the HSPICE simulation.

• Proceedings of the IEEK Conference
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• 2000.07a
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• pp.347-350
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• 2000

We present the design of ternary flip-flop which is based on ternary logic so as to process ternary data. These flip-flops are fabricated with ternary voltage mode NOR, NAND, INVERTER gates. These logic gate circuits are designed using CMOS and obtained the characteristics of a lower voltage, a lower power consumption as compared to other gates. These circuits have been simulated with the electrical parameters of a standard 0.25 micron CMOS technology and 2.5 volts supply voltage. The Architecture of proposed ternary flip-flop is highly modular and well suited for VLSI implementation, only using ternary gates.

• Proceedings of the IEEK Conference
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• 2000.07b
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• pp.937-940
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• 2000

This paper describes expandable 4 bit ALU IC using adiabatic and dynamic CMOS circuit technique. It was designed so that the integrated circuit may have the function which is equivalent to HC181 which is CMOS standard logic IC for the comparison, and it was fabricated using a standard 1.2${\mu}$ CMOS process. As the result, the IC has shown that it operates perfectly on all function modes. The power dissipation is 2 order lower than that of HC 181.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.10
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• pp.33-37
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• 2007

This paper presents the implementation technique to reduce circuit area occupation in designing Low Noise Amplifier (LNA) using vertical shunt symmetric inductor. We applied a vertical shunt symmetric inductor to match the input and output in 3 GHz CMOS LNA to reduce the circuit area. This size efficient amplifier has been designed in a $0.18\;{\mu}m$ digital logic CMOS process. In this paper, the case of conventional asymmetric inductor, and vertical shunt symmetrical inductor with a relatively higher number of turns have been compared in order to efficient a size efficient CMOS LNA design method while still retaining the circuit operation characteristics.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.21-25
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• 2007

A two-dimensional TCAD MEDICI simulator was used to examine the voltage transfer characteristics, on-off switching properties and latch-up of a CMOS inverter as a function of the n-channel length and doping levels. The channel in a LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of a CMOS inverter. The digital logic levels of the output and input voltages were analyzed from the transfer curves and circuit operation. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.69-72
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• 2003

This paper presents a current-mode multiple-input minimum circuit. The proposed circuit can be implemented by applying De Morgan’s law. The circuit diagram is simple and modular. It operates using a single 2.5V supply and has very low dissipation. The realization method is suitable for fabrication using CMOS technology and all transistors are operated in their saturation region. The performances of this proposed circuit were studied using the PSPICE analog simulation program. The simulation results show the approval of this circuit that it has adequate basic performances for a real-time fuzzy controller and a fuzzy computer.

• Journal of the Korean Society of Industry Convergence
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• v.5 no.1
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• pp.39-43
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• 2002

In present much CMOS devices used in VLSI circuit and Logic circuit. With increasing a number of device in VLSI, the confidence becomes more serious. This paper describe the mechanism of breakdown on CMOS, especially n-MOS, based on Hydro Dynamic model with device self-heating. Additionally, illustrate the CMOS latch-up characteristics on simplified device structure on this paper.

• The KIPS Transactions:PartA
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• v.17A no.3
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• pp.121-126
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• 2010

This paper proposes a low-power MOS current-mode logic circuit with the low voltage swing technology and the high-threshold sleep-transistor. The sleep-transistor is used to high-threshold voltage PMOS transistor to minimize the leakage current. The $16{\times}16$ bit parallel multiplier is designed by the proposed circuit structure. Comparing with the conventional MOS current-model logic circuit, the circuit achieves the reduction of the power consumption in sleep mode by 1/104. The proposed circuit is achieved to reduce the power consumption by 11.7% and the power-delay-product by 15.1% compared with the conventional MOS current-model logic circuit in the normal mode. This circuit is designed with Samsung $0.18\;{\mu}m$ standard CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

• Journal of the Korea Computer Industry Society
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• v.3 no.1
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• pp.57-66
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• 2002

In this study, Multi-Values Logic processor was designed using the basic circuit of the electric current mode CMOS. First of all, binary FFT(Fast Fourier Transform) was extended and high-speed Multi-Valued Logic processor was constructed using a multi-valued logic circuit. Compared with the existing two-valued FFT, the FFT operation can reduce the number of transistors significantly and show the simplicity of the circuit. Moreover, for the construction of amount was used inside the FFT circuit with the set of redundant numbers like ［0,1,2,3］. As a result, the defects in lines were reduced and it turned out to be effective in the aspect of normality an regularity when it was used designing VLSI(Very Large Scale Integration). To multiply FFT, the time and size of the operation was used as LUT(Look Up Table) Finally, for the compatibility with the binary system, multiple-valued hybrid-type FFT processor was proposed and designed using binary-four valued encoder, four-binary valued decoder, and the electric current mode CMOS circuit.