• Title/Summary/Keyword: CMOS logic circuit

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Power Supply Circuits with Small size for Adiabatic Dynamic CMOS Logic Circuits

  • Sato, Masashi;Hashizume, Masaki;Yotuyanagi, Hiroyuki;Tamesada, Takeomi
    • Proceedings of the IEEK Conference
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    • 2000.07a
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    • pp.179-182
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    • 2000
  • Adiabatic dynamic CMOS logic circuits, which are called ADCL circuits, promise us to implement low power logic circuits. Since the power supply source for ADCL circuits had not been developed, we proposed a power supply circuit for them. It is shown experimentally that by using the power supply circuit ADCL circuits can work with lower power consumption than conventional static CMOS circuit. In this paper, the power supply circuit is improved so that the power consumption can be reduced. Also, it is shown by some experiments that by using the circuit, ADCL circuits can work with lower power consumption than before Improving.

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Design of a 20 Gb/s CMOS Demultiplexer Using Redundant Multi-Valued Logic (중복 다치논리를 이용한 20 Gb/s CMOS 디멀티플렉서 설계)

  • Kim, Jeong-Beom
    • The KIPS Transactions:PartA
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    • v.15A no.3
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    • pp.135-140
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    • 2008
  • This paper describes a high-speed CMOS demultiplexer using redundant multi-valued logic (RMVL). The proposed circuit receives serial binary data and is converted to parallel redundant multi-valued data using RMVL. The converted data are reconverted to parallel binary data. By the redundant multi-valued data conversion, the RMVL makes it possible to achieve higher operating speeds than that of a conventional binary logic. The implemented demultiplexer consists of eight integrators. Each integrator is composed of an accumulator, a window comparator, a decoder and a D flip flop. The demultiplexer is designed with TSMC $0.18{\mu}m$ standard CMOS process. The validity and effectiveness are verified through the HSPICE simulation. The demultiplexer is achieved the maximum data rate of 20 Gb/s and the average power consumption of 95.85 mW.

Design of a Full-Adder Using Current-Mode Multiple-Valued Logic CMOS Circuits (전류 모드 CMOS 다치 논리 회로를 이용한 전가산기 설계)

  • Won, Young-Uk;Kim, Jong-Soo;Kim, Jeong-Beom
    • Proceedings of the KIEE Conference
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    • 2003.11b
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    • pp.275-278
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    • 2003
  • This paper presents a full-adder using current-mode multiple valued logic CMOS circuits. This paper compares propagation delay, power consumption, and PDP(Power Delay Product) compared with conventional circuit. This circuit is designed with a samsung 0.35um n-well 2-poly 3-metal CMOS technology. Designed circuits are simulated and verified by HSPICE. Proposed full-adder has 2.25 ns of propagation delay and 0.21 mW of power consumption.

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Detection of Stuck-Open Faults in BiCMOS Circuits using Gate Level Transition Faults (게이트 레벨 천이고장을 이용한 BiCMOS 회로의 Stuck-Open 고장 검출)

  • 신재흥;임인칠
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.12
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    • pp.198-208
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    • 1995
  • BiCMOS circuit consist of CMOS part which constructs logic function, and bipolar part which drives output load. Test to detect stuck-open faults in BiCMOS circuit is important, since these faults do sequential behavior and are represented as transition faults. In this paper, proposes a method for efficiently detecting transistor stuck-open faults in BiCMOS circuit by transforming them into slow-to=rise transition and slow-to-fall transition. In proposed method, BiCMOS circuit is transformed into equivalent gate-level circuit by dividing it into pull-up part which make output 1, and pull-down part which make output 0. Stuck-open faults in transistor are modelled as transition fault in input line of gate level circuit which is transformed from given circuit. Faults are detceted by using pull-up part gate level circuit when expected value is '01', or using pull-down part gate level circuit when expected value is '10'. By this method, transistor stuck-open faults in BiCMOS circuit are easily detected using conventional gate level test generation algorithm for transition fault.

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Design of a Low-Power MOS Current-Mode Logic Parallel Multiplier (저 전력 MOS 전류모드 논리 병렬 곱셈기 설계)

  • Kim, Jeong-Beom
    • Journal of IKEEE
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    • v.12 no.4
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    • pp.211-216
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    • 2008
  • This paper proposes an 8${\times}$8 bit parallel multiplier using MOS current-mode logic (MCML) circuit for low power consumption. The proposed circuit has a structure of low-power MOS current-mode logic circuit with sleep-transistor to reduce the leakage current. The sleep-transistor is used to PMOS transistor to minimize the leakage current. Comparing with the conventional MOS current-model logic circuit, the circuit achieves the reduction of the power consumption in sleep mode by 1/50. The designed multiplier is achieved to reduce the power consumption by 10.5% and the power-delay-product by 11.6% compared with the conventional MOS current-model logic circuit. This circuit is designed with Samsung 0.35 ${\mu}m$ standard CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

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Design of a 64×64-Bit Modified Booth Multiplier Using Current-Mode CMOS Quarternary Logic Circuits (전류모드 CMOS 4치 논리회로를 이용한 64×64-비트 변형된 Booth 곱셈기 설계)

  • Kim, Jeong-Beom
    • The KIPS Transactions:PartA
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    • v.14A no.4
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    • pp.203-208
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    • 2007
  • This paper proposes a $64{\times}64$ Modified Booth multiplier using CMOS multi-valued logic circuits. The multiplier based on the radix-4 algorithm is designed with current mode CMOS quaternary logic circuits. Designed multiplier is reduced the transistor count by 64.4% compared with the voltage mode binary multiplier. The multiplier is designed with Samsung $0.35{\mu}m$ standard CMOS process at a 3.3V supply voltage and unit current $5{\mu}m$. The validity and effectiveness are verified through the HSPICE simulation. The voltage mode binary multiplier is achieved the occupied area of $7.5{\times}9.4mm^2$, the maximum propagation delay time of 9.8ns and the average power consumption of 45.2mW. This multiplier is achieved the maximum propagation delay time of 11.9ns and the average power consumption of 49.7mW. The designed multiplier is reduced the occupied area by 42.5% compared with the voltage mode binary multiplier.

Two Phase Clocked Adiabatic Static CMOS Logic and its Logic Family

  • Anuar, Nazrul;Takahashi, Yasuhiro;Sekine, Toshikazu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.1
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    • pp.1-10
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    • 2010
  • This paper proposes a two-phase clocked adiabatic static CMOS logic (2PASCL) circuit that utilizes the principles of adiabatic switching and energy recovery. The low-power 2PASCL circuit uses two complementary split-level sinusoidal power supply clocks whose height is equal to $V_{dd}$. It can be directly derived from static CMOS circuits. By removing the diode from the charging path, higher output amplitude is achieved and the power consumption of the diode is eliminated. 2PASCL has switching activity that is lower than dynamic logic. We also design and simulate NOT, NAND, NOR, and XOR logic gates on the basis of the 2PASCL topology. From the simulation results, we find that 2PASCL 4-inverter chain logic can save up to 79% of dissipated energy as compared to that with a static CMOS logic at transition frequencies of 1 to 100 MHz. The results indicate that 2PASCL technology can be advantageously applied to low power digital devices operated at low frequencies, such as radio-frequency identifications (RFIDs), smart cards, and sensors.

Structure of Low-Power MOS Current-Mode Logic Circuit with Sleep-Transistor (슬립 트랜지스터를 이용한 저 전력 MOS 전류모드 논리회로 구조)

  • Kim, Jeong-Beom
    • The KIPS Transactions:PartA
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    • v.15A no.2
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    • pp.69-74
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    • 2008
  • This paper proposes a structure of low-power MOS current-mode logic circuit with sleep-transistor to reduce the leakage current. The sleep-transistor is used to high-threshold voltage transistor to minimize the leakage current. The $16\;{\times}\;16$ bit parallel multiplier is designed by the proposed circuit structure. Comparing with the conventional MOS current-model logic circuit, the circuit achieves the reduction of the power consumption in sleep mode by 1/50. This circuit is designed with Samsung $0.35\;{\mu}m$ CMOS process. The validity and effectiveness are verified through the HSPICE simulation.

Electrical Characteristics of CMOS Circuit Due to Channel Region Parameters in LDMOSFET

  • Kim, Nam-Soo;Cui, Zhi-Yuan;Lee, Hyung-Gyoo;Kim, Kyoung-Won
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.3
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    • pp.99-102
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    • 2006
  • The electrical characteristics of CMOS inverter with LDMOSFET are studied for high power and digital circuit application by using two dimensional MEDICI simulator. The simulation is done in terms of voltage transfer characteristic and on-off switching properties of CMOS inverter with variation of channel length and channel doping levels. The channel which surrounds a junction-type source in LDMOSFET is considered to be an important parameter to decide a circuit operation of CMOS inverter. The digital logic levels of input voltage show to increase with increase of n-channel length and doping levels while the logic output levels show to the almost constant.

CMOS Logic Circuits with Lower Subthreshold Leakage Current (낮은 Subthreshold 누설전류를 갖는 CMOS 논리회로)

  • Song Sang-Hun
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.53 no.10
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    • pp.500-504
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    • 2004
  • We propose a new method to reduce the subthreshold leakage current. By moving the operating point of OFF state MOSFETs through input-controlled voltage generators, logic circuits with much lower leakage current can be built with few extra components. SPICE simulation results for the new inverter show correct logic results without speed degradation compared to a conventional inverter.