• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.1163-1166
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• 1999

In this paper, A CMOS power amplifier for PCS is designed with 0.65-$\mu\textrm{m}$ CMOS technology. Differential cascode structure is used which has good reverse isolation and wide voltage swing. This amplifier circuits consist of three stages which are power amplification stage, driver stage and power control stage. We obtain output power of 30 ㏈m, IMD3 of -31㏈c and efficiency of 30 % at input power of 4 ㏈m.

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.407-410
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• 1987

A layout design concept which suppress the substrate current generated during the switching transients of an CMOS inverter is presented. The amount of hot carriers and the peak value of substrate current can be reduced by changing the device geometry ratio of driver and load device of an CMOS inverter.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.33-38
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• 2017

In this paper, a 4-channel common-cathode VCSEL diode driver array with 3.125 Gb/s per channel operation speed is realized. In order to achieve faster speed of the switching main driver with relatively large transistors, the transmitter array chip consists of a pre-amplifier with active inductor stage and also an input buffer with modified equalizer, which leads to bandwidth extension and reduced current consumption. The utilized VCSEL diode provides inherently 2.2 V forward bias voltage, $50{\Omega}$ resistance, and 850 fF capacitance. In addition, the main driver based upon current steering technique is designed, so that two individual current sources can provide bias currents of 3.0 mA and modulation currents of 3.3 mA to VCSEL diodes. The proposed 4-channel VCSEL driver array has been implemented by using a $0.11-{\mu}m$ CMOS technology, and the chip core occupies the area of $0.15{\times}0.18{\mu}m^2$ and dissipates 22.3 mW per channel.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.05a
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• pp.143-146
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• 2011

A 50-MS/s 10-bit pipelined ADC with 1.2Vpp differential input range is proposed in this paper. The designed pipelined ADC consists of eight stage of 1.5bit/stage, one stage of 2bit/stage, digital error correction block, bias & reference driver, and clock generator. 1.5bit/stage is consists of sub-ADC, DAC and gain stage, Specially, a sample-and hold amplifier (SHA) is removed in the designed pipelined ADC to reduce the hardware and power consumption. Also, the proposed bootstrapped switch improves the Linearity of the input analog switch and the dynamic performance of the total ADC. The reference voltage was driven by using the on-chip reference driver without external reference. The proposed pipelined ADC was designed by using a 0.18um 1-poly 5-metal CMOS process with 1.8V supply. The total area including the power decoupling capacitor and power consumption are $0.95mm^2$ and 60mW, respectively. Also, the simulation result shows the ENOB of 9.3-bit at the Nyquist sampling rate.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.653-656
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• 2003

We have designed embedded web sewer system and ported Linux operating system version 2.4.5 at our system. And then We implemented to control and monitor widely separated hardware and implemented to monitor widely separated image using CMOS image sensor HV7131B. Web server is the Boa web server with General Public License. We designed for this system using of Intel's SA1110 ARM core base processor and connecting input and output device at GPIO port of SA1110. Device driver of General purpose I/O for Embedded Linux OS is designed. And then the application program controlling driver is implemented to use of common gate interface C language. User is available to control and monitor at client PC. This method have benefit to reduce the Expenditure of hardware design and development time against PC base system and have various and capacious application against firmware base system.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.8
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• pp.54-61
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• 2001

A fully on-chip open-drain CMOS output driver was designed for high bandwidth DRAMs, such that its output voltage swing was insensitive to the variations of temperature and supply voltage. An auto refresh signal was used to update the contents of the current control register, which determined the transistors to be turned-on among the six binary-weighted transistors of an output driver. Because the auto refresh signal is available in DRAM chips, the output driver of this work does not require any external signals to update the current control register. During the time interval while the update is in progress, a negative feedback loop is formed to maintain the low level output voltage ($V_OL$) to be equal to the reference voltage ($V_{OL.ref}$) which is generated by a low-voltage bandgap reference circuit. Test results showed the successful operation at the data rate up to 1Gb/s. The worst-case variations of $V_{OL.ref}$ and $V_OL$ of the proposed output driver were measured to be 2.5% and 7.5% respectively within a temperature range of $20^{\circ}C$ to $90^{\circ}C$ and a supply voltage range of 2.25V to 2.75V, while the worst-case variation of $V_OL$ of the conventional output driver was measured to be 24% at the same temperature and supply voltage ranges.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.11
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• pp.41-48
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• 2005

The crosstalk effects that can be observed in the very dee submicron semiconductor chips are due to the coupling capacitances between interconnect lines. The accuracy of the full-chip timing analysis is determined by the accuracy of the estimated propagation delays of cells and interconnects within the chip. This paper presents a CMOS cell driver model and delay calculation algerian capturing the crosstalk effects due to the coupling capacitances. The proposed model and algorithm were implemented in a delay calculation program and used to estimate the propagation delays of the benchmark circuits extracted from a chip layout. We observed that the average discrepancy from HSPICE simulation results is within $1\%$ for the circuits with a victim affected by $0\~10$ aggressors.

• Journal of IKEEE
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• v.16 no.3
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• pp.203-210
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• 2012

Since the non-overlapping gate driver used in conventional DC-DC boost converters generates fixed dead-times, the converters suffer from the body-diode conduction loss or the charge-sharing loss. To reduce the efficiency degradation due to these losses, this paper presents a PWM DC-DC boost converter with adaptive dead-time control. The proposed DC-DC boost converter delivering 3.3V output from a 2.5V input is designed with CMOS $0.3{\mu}m$ technology. It operates at 500kHz and has a maximum power efficiency of 97.3%.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.85-90
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• 2009

This paper presents a single supply PLC SoC ASIC with a built-in analog Front-end circuit. To achieve the low power consumption along with low cost, this PLC SoC employs fully CMOS Analog Front End (AFE) and several LDO regulators (LDOs) to provide the internal power for Logic Core, DAC and Input/output Pad driver. The receiver part of the AFE consists of Pre-amplifier, Gain Amplifier and 1 bit Comparator. The transmitter part of the AFE consists of 10 bit Digital Analog Converter and Line Driver. This SoC is implemented with 0.18 ${\mu}m$ 1 Poly 5 Metal CMOS Process. The single supply voltage is 3.3 V and the internal powers are provided using LDOs. The total power consumption is below 30 mA at stand-by mode to meet the Eco-Design requirement. The die size is 3.2 $\times$ 2.8 $mm^{2}$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.1
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• pp.14-21
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• 2009

A digital differential transmitter based on CMOS inverter worked up to 2.8 Gbps at the supply voltage of 1 V with a $0.18{\mu}m$ CMOS process. By calibrating the output impedance of the transmitter, the impedance matching between the transmitter output and the transmission line is achieved. The PVT variations of pre-driver are compensated by the calibration of the rising-edge delay and falling-edge delay of the pre-driver outputs. The chip fabricated with a $0.18{\mu}m$ CMOS process, which uses the standard supply voltage of 1.8 V, gives the highest data rate of 4Gbps at the supply voltage of 1.2 V. The proposed calibration schemes improve the eye opening with the voltage margin by 200% and the timing margin by 30%, at 2.8 Gbps and 1 V.