• International Journal of Internet, Broadcasting and Communication
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• 제15권3호
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• pp.122-128
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• 2023

This paper proposes two kinds of single-balanced direct conversion quadrature receivers using selfoscillating LMVs in which the voltage-controlled oscillator (VCO) itself operates as a mixer while generating an oscillation. The two LMVs are complementary coupled and series coupled to generate the quadrature oscillating signals, respectively. Using a 65 nm CMOS technology, the proposed quadrature receivers are designed and simulated. Oscillating at around 2.4 GHz frequency, the complementary coupled quadrature receiver achieves the phase noise of -28 dBc/Hz at 1KHz offset and -109 dBc/Hz at 1 MHz offset frequency. The other series coupled receiver achieves the phase noise of -31 dBc/Hz at 1KHz offset and -109 dBc/Hz at 1 MHz offset frequency. The simulated voltage conversion gain of the two single-balanced receivers is 37 dB and 45 dB, respectively. The double-sideband noise figure of the two receivers is 5.3 dB at 1 MHz offset. The quadrature receivers consume about 440 μW dc power from a 1.0-V supply.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• 제21권4호
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• pp.443-451
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• 2010

This paper describes a fully integrated CMOS low-IF mobile-TV RF tuner for Band-III T-DMB/DAB applications. All functional blocks such as low noise amplifier, mixers, variable gain amplifiers, channel filter, phase locked loop, voltage controlled oscillator and PLL loop filter are integrated. The gain of LNA can be controlled from -10 dB to +15 dB with 4-step resolutions. This provides a high signal-to-noise ratio and high linearity performance at a certain power level of RF input because LNA has a small gain variance. For further improving the linearity and noise performance we have proposed the RF VGA exploiting Schmoock's technique and the mixer with current bleeding, which injects directly the charges to the transconductance stage. The chip is fabricated in a 0.18 um mixed signal CMOS process. The measured gain range of the receiver is -25~+88 dB, the overall noise figure(NF) is 4.02~5.13 dB over the whole T-DMB band of 174~240 MHz, and the measured IIP3 is +2.3 dBm at low gain mode. The tuner rejects the image signal over maximum 63.4 dB. The power consumption is 54 mW at 1.8 V supply voltage. The chip area is $3.0{\times}2.5mm^2$.

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
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• 제13권2호
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• pp.44-52
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• 2002

본 논문에서는 RF와 마이크로파 응용을 위한 MEMS 수동 소자에 대한 내용이다. 이 수동 소자들을 만들기 위해서 개발된 3타원 MEMS공정은 기존의 실리콘 공정과 완전한 호환성을 가지고 한 칩으로 집적화 시킬 수 있는 공정이다. 이 3차원 MEMS 공정은 기존 실리콘 긍정이 가지고 있는 한계를 극복하기 위한 방법으로써 개발되었다. 개발된 공정을 이용하여 실리콘 공정에서 구현할 수 없었던 좋은 성능의 인덕터, 트랜스포머 및 전송선을 RF와 마이크로파 응용을 위해서 구현하였다. 저 전압, 높은 차단율을 위한 push-pull 개념을 도입한 MEMS 스위치를 구현하였다. 또한 높은 Q를 갖는 MEMS 인덕터를 최초로 CMOS 칩과 집적화에 성공하여 600kHz 옵셋 주파수에서 -122 dBc/Hz의 특성을 갖는 2.6 GHz 전압 제어 발진기를 제작하였다.

• Journal of IKEEE
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• 제15권2호
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• pp.129-133
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• 2011

A spread spectrum clock generation is an efficient way to reduce electro-magnetic interference (EMI) radiation in modern mixed signal chip systems. The proposed circuit generates the spread spectrum clock by directly injecting the modulation voltage into the voltage-controlled oscillator (VCO) current source for SATA II. The resulting 33KHz modulation profile has a Hersey-Kiss shape with a rounded peak. The chip has been fabricated using $0.18{\mu}m$ CMOS process and test results show that the proposed circuit achieves 0.509% (5090ppm) down spreading at 1.5GHz and peak power reduction of 10dB. The active chip area is 0.36mm ${\times}$ 0.49mm and the chip consumes 30mW power at 1.5GHz.

• Journal of information and communication convergence engineering
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• 제7권1호
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• pp.62-65
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• 2009

In this paper, the temperature characteristics of full CMOS FLL(frequency locked loop) re analyzed. The FLL circuit is used to generate an output signal that tracks an input efference signal. The locking time of FLL is short compared to PLL(phase locked loop) circuit because the output signal of FLL is synchronized only in frequency. Also the FLL s designed to allow the circuit to be fully integrated. The FLL circuit is composed two VCs, two buffers, a VCO and two frequency dividers. The temperature variation of frequency divider, FVC and buffer cancelled because the circuit structure. is the same and he temperature effect is cancelled by the comparator. Simulation results are shown to illustrate the performance of the designed FLL circuit with temperature.

• Journal of information and communication convergence engineering
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• 제6권3호
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• pp.275-278
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• 2008

In this paper, I propose the full CMOS FLL(frequency locked loop) circuit. The proposed FLL circuit has a simple structure which contains a FVC(frequency-to-voltage converter), an operational amplifier and a VCO(voltage controlled oscillator). The operation of FLL circuit is based on frequency comparison by the two FVC circuit blocks. The locking time of FLL is short compared to PLL(phase locked loop) circuit because the output signal of FLL is synchronized only in frequency. The circuit is designed by 0.35${\mu}m$ process and simulation carried out with HSPICE. Simulation results are shown to illustrate the performance of the proposed FLL circuit.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 한국전자파학회 2002년도 종합학술발표회 논문집 Vol.12 No.1
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• pp.394-397
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• 2002

A design study of phase detectors for the 2.5 Gb/s CDR circuit using a standard 0.18-${\mu}{\textrm}{m}$ CMOS process has been performed. The targeted CDR is based on the phase-locked loop and thus it consists of a phase detector, a charge pump, a LPF, and a VCO. For high frequency operation of 2.5 Gb/s, phase detector and charge pump, which accurately compare phase errors to reduce clock jitter, are critical for designing a reliable CDR circuit. As a phase detector, the Hogge phase detector is selected but two transistors are added to improve the performance of the D-F/F. The charge pump was also designed to be placed indirectly input and output.

• The Transactions of The Korean Institute of Electrical Engineers
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• 제59권2호
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• pp.465-470
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• 2010

The charge pump in a phase-locked loop is a key block in determining reference spurs of the VCO output signal. To reduce reference spurs, the current mismatch in the charge pump must be minimized. This paper presents a dual compensation method to reduce the current mismatch. The proposed charge pump and PLL were realized in a $0.18{\mu}m$ CMOS process. Measured current matching characteristics were achieved with less than 1.4% difference and with the current variation of 3.8% in the pump current over the charge pump output voltage range of 0.35-1.35V at 1.8V. The reference spur of the PLL based on the proposed charge pump was measured to be -71dBc.

• Proceedings of the KIEE Conference
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• 대한전기학회 2001년도 하계학술대회 논문집 D
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• pp.2579-2581
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• 2001

넓은 가변 범위를 가지는 LC 탱크 전압 제어 발진기에 관해 본 논문에서 소개하고자 한다. LC 탱크 전압 제어 발진기의 발진을 소멸시키는 밀러 증폭기의 ESR을 제거함으로써 넓은 가변 범위를 얻을 수 있다. LC 탱크 전압 제어 발진기는 발진기 코어와 버퍼, 밴드갭(bandgap) 기준 전압 발생기 그리고 드라이브 증폭기로 구성되어 있다. 발진기 코어는 1.3mA의 전류를 소모하고 약 1GHz의 가변 범위를 가진다. 출력주파수의 가변 범위내에 발진기의 출력 전력은 3dBm 이내로 변한다. 이러한 LC 탱크 전압 제어 발진기는 BiCMOS 공정을 이용하여 제작되었고 2.7V 단일 전원에서 31.5mW의 전력을 소모한다.

• Journal of Multimedia Information System
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• 제5권2호
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• pp.139-142
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• 2018

This work presents a novel architecture of phase locked loop (PLL) with the current compensating scheme to improve phase noise characteristic. The proposed PLL has two charge pumps (CP), main-CP (MCP) and sub-CP (SCP). The smaller SCP current with same time duration but opposite direction of UP/DN MCP current is injected to the loop filter (LF). It suppresses the voltage fluctuation of LF. The PLL has a novel voltage controlled oscillator (VCO) consisting of a voltage controlled resistor (VCR) and the three-stage ring oscillator with latch type delay cells. The VCR linearly converts voltage into current, and the latch type delay cell has short active on-time of transistors. As a result, it improves phase noise characteristic. The proposed PLL has been fabricated with $0.35{\mu}m$ 3.3 V CMOS process. Measured phase noise at 1 MHz offset is -103 dBc/Hz resulting in 3 dBc/Hz phase noise improvement compared to the conventional PLL.