• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.46-52
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• 1991

A new signal process circuit using two ISFETs as the input devices of the MOS differential amplifier stage for an ISFET biosensor has been developed. One chip integration of the newly developed signal process circuit, ISFETs and a Pt quasi-reference electrode has been carried out according to modified LOCOS p-well CMOS process. The fabricated chip showed gains of 0.8 and 1.6, good liniarity in the input-output relationship and very small power dissipation, 4mW. The chip was applied to realize a urea sensor by forming an immobilized urease membrane, using lift-off technique. on the gate of an ISFET. The urea sensor chip showed stable responses in a wide range of urea concentrations.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.759-762
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• 2002

In this paper, a voltage-controlled linear variable resistor (VCLVR) using a floating-gate MOS-FET (FG-MOSFET) is proposed. The proposed-circuit is the grounded VCLVR consists of only an ordinary MOSFET and an FG-MOSFET. The advantage of the proposed VCLVR are low-voltage and wide-input range. Next, as applications, a floating-node voltage controlled variable resistor and an operational transconductance amplifier using the proposed VCLVRs are proposed. The performance of the proposed circuits are characterized through HSPICE simulations with a standard 0.6 ${\mu}$m CMOS process. simulations of the proposed VCLVR demonstrate a resistance value of 40 k$\Omega$ to 338 k$\Omega$ and a THD of less than 1.1 %.

• Journal of information and communication convergence engineering
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• v.9 no.1
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• pp.11-15
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• 2011

A Differential line inductor is proposed for a differential power amplifier. The proposed differential line inductor is composed of two conventional line inductors rearranged to make the current direction of the two line inductors identical. The proposed line inductor is simulated with a 2.5-D and a 3-D EM simulator to verify its feasibility with the substrate information in a 0.18-${\mu}m$ RF CMOS process. The inductances of various line inductors implemented with printed circuit boards were measured. The feasibility of the proposed line inductor was successfully demonstrated.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.89-94
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• 2008

In this paper, a cascade of a wideband amplifier and a high-Q bandpass filter (BPF) has been realized in a 0.18mm CMOS technology for the applications of subsampling direct-conversion receivers. The wideband amplifier is designed to obtain the -3dB bandwidth of 5.4GHz, and the high-Q BPF is designed to select a 2.4GHz RF signal for the Bluetooth specifications. The measured results demonstrate 18.8dB power gain at 2.34GHz with 31MHz bandwidth, corresponding to the quality factor of 75. Also, it shows the noise figure (NF) of 8.6dB, and the broadband input matching (S11) of less than -12dB within the bandwidth. The whole chip dissipates 64.8mW from a single 1.8V supply and occupies the area of $1.0{\times}1.0mm2$.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.149-155
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• 2015

This paper proposes 5-MS/s 10-bit digital-to-analog converter(DAC) with the improved linearity. The proposed DAC consists of a 10-bit R-2R-based DAC, an output buffer using a differential voltage amplifier with rail-to-rail input range, and a band-gap reference circuit for the bias voltage. The linearity of the 10-bit R-2R DAC is improved as the resistor of 2R is implemented by including the turn-on resistance of an inverter for a switch. The output voltage range of the DAC is determined to be $2/3{\times}VDD$ from an rail-to-rail output voltage range of the R-2R DAC using a differential voltage amplifier in the output buffer. The proposed DAC is implemented using a 1-poly 8-metal 130nm CMOS process with 1.2-V supply. The measured dynamic performance of the implemented DAC are the ENOB of 9.4 bit, SNDR of 58 dB, and SFDR of 63 dBc. The measured DNL and INL are less than +/-0.35 LSB. The area and power consumption of DAC are $642.9{\times}366.6{\mu}m^2$ and 2.95 mW, respectively.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.70-79
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• 2016

This paper proposes a low-power range-scaled 14b 30 MS/s pipeline-SAR composite ADC for high-performance CIS applications. The SAR ADC is employed in the first stage to alleviate a sampling-time mismatch as observed in the conventional SHA-free architecture. A range-scaling technique processes a wide input range of 3.0VP-P without thick-gate-oxide transistors under a 1.8 V supply voltage. The first- and second-stage MDACs share a single amplifier to reduce power consumption and chip area. Moreover, two separate reference voltage drivers for the first-stage SAR ADC and the remaining pipeline stages reduce a reference voltage disturbance caused by the high-speed switching noise from the SAR ADC. The measured DNL and INL of the prototype ADC in a $0.18{\mu}m$ CMOS are within 0.88 LSB and 3.28 LSB, respectively. The ADC shows a maximum SNDR of 65.4 dB and SFDR of 78.9 dB at 30 MS/s, respectively. The ADC with an active die area of $1.43mm^2$ consumes 20.5 mW at a 1.8 V supply voltage and 30 MS/s, which corresponds to a figure-of-merit (FOM) of 0.45 pJ/conversion-step.

• Journal of IKEEE
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• v.18 no.2
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• pp.192-197
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• 2014

In this paper, $3^{rd}$ SDM with FDPA(Feedback Delay Pass Addition) technique to improve the input range is proposed. Conventional architecture with $3^{rd}$ transfer function is just made as adding a digital delay path in $2^{nd}$ SDM architecture. But the input range is very small because feedback path into the first integrator is increased. But, proposed architecture change feedback path into the first integrator to the second integrator, so input range could be improved about 9dB. The $3^{rd}$ SC SDM with only one operational amplifier was implemented using double-sampling technique. Simulation results for the proposed SDM designed in $0.18{\mu}m$ CMOS technology with power supply voltage 1.8V, signal bandwidth 20KHz and audible sampling frequency 2.8224MHz show SNR(Signal to Noise Ratio) of 83.8dB, the power consumption of $700{\mu}W$ and Dynamic Range of 82.8dB.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.39-46
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• 2016

This paper describes the third order feedforward delta-sigma modulator with inverter-based integrators and a 1.5bit comparator for the application of audio signal processing. The proposed 3rd-order delta-sigma modulator is multi-bit structure using 1.5 bit comparator instead of operational amplifier. This delta-sigma modulator has high SNR compared with single-bit 4th-order delta-sigma modulator in a low OSR. And it minimizes power consumes and simplified circuit structure using inverter-based integrator and using inverter-based integrator as analogue adder. The modulator was designed with 0.18um CMOS standard process and total chip area is $0.36mm^2$. The measured power cosumption is 28.8uW in a 0.8V analog supply and 66.6uW in a 1.8V digital supply. The measurement result shows that the peak SNDR of 80.7 dB, the ENOB of 13.1bit and the dynamic range of 86.1 dB with an input signal frequency of 2.5kHz, a sampling frequency of 2.56MHz and an oversampling rate of 64. The FOM (Walden) from the measurement result is 269 fJ/step, FOM (Schreier) was calculated as 169.3 dB.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.6
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• pp.1250-1259
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• 2012

In this paper, a time-domain comparator is proposed for a successive approximation (SA) analog-to-digital converter (ADC) with a low power and high resolution. The proposed time-domain comparator consists of a voltage-controlled delay converter with a clock feed-through compensation circuit, a time amplifier, and binary phase detector. It has a small input capacitance and compensates the clock feed-through noise. To analyze the performance of the proposed time-domain comparator, two 1V 10-bit 200-kS/s SA ADCs with a different time-domain comparator are implemented by using 0.18-${\mu}m$ 1-poly 6-metal CMOS process. The measured SNDR of the implemented SA ADC is 56.27 dB for the analog input signal of 11.1 kHz, and the clock feed-through compensation circuit and time amplifier of the proposed time-domain comparator enhance the SNDR of about 6 dB. The power consumption and area of the implemented SA ADC are 10.39 ${\mu}W$ and 0.126 mm2, respectively.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.3
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• pp.46-55
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• 2016

This work proposes a 13b 100MS/s 45nm CMOS ADC with a high dynamic performance for IF-domain high-speed signal processing systems based on a four-step pipeline architecture to optimize operating specifications. The SHA employs a wideband high-speed sampling network properly to process high-frequency input signals exceeding a sampling frequency. The SHA and MDACs adopt a two-stage amplifier with a gain-boosting technique to obtain the required high DC gain and the wide signal-swing range, while the amplifier and bias circuits use the same unit-size devices repeatedly to minimize device mismatch. Furthermore, a separate analog power supply voltage for on-chip current and voltage references minimizes performance degradation caused by the undesired noise and interference from adjacent functional blocks during high-speed operation. The proposed ADC occupies an active die area of $0.70mm^2$, based on various process-insensitive layout techniques to minimize the physical process imperfection effects. The prototype ADC in a 45nm CMOS demonstrates a measured DNL and INL within 0.77LSB and 1.57LSB, with a maximum SNDR and SFDR of 64.2dB and 78.4dB at 100MS/s, respectively. The ADC is implemented with long-channel devices rather than minimum channel-length devices available in this CMOS technology to process a wide input range of $2.0V_{PP}$ for the required system and to obtain a high dynamic performance at IF-domain input signal bands. The ADC consumes 425.0mW with a single analog voltage of 2.5V and two digital voltages of 2.5V and 1.1V.