• Journal of the Institute of Electronics and Information Engineers
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• v.50 no.2
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• pp.122-133
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• 2013

An arbiter-based simple phase decision circuit (PDC) optimized for high-resolution phase-to-digital converter made up of an analog phase-frequency detector and a time-to-digital converter for all-digital phase-locked loops is proposed. It can distinguish very small phase difference between two pulses even though it consumes lower power and has smaller input-to-output delay than the previously reported PDC. Proposed PDC is realized using 130-nm CMOS process and demonstrated by transistor-level simulations. A 5-bit P2D having no offset nor deadzone using the PDC is also demonstrated. A harmonic-lock-free and small-phase-offset delay-locked loop for fixing the P2D resolution regardless of PVT variations is also proposed and demonstrated.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.504-512
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• 2010

The paper proposes the 6bit 800MS/s flash A/D converter that can be applied to wireless USB chip-set. The paper simplified the error correction circuit and synchronization block as one circuit which are used respectively, and furthermore reduced the burden on the hardware. Comparing to the conventional error correction circuit, the proposed error correction circuit in this paper reduced 5 MOS transistors, the area of each error correction circuit is reduced by 9%. The A/D converter is fabricated with 0.18um CMOS 1-poly 6-metal process, and power dissipation is 182mW at 0.8Vpp input range and 1.8V supply voltage. The measured result shows 4.0bit of ENOB at 800MS/s conversion rate and 128.1MHz input frequency.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.545-548
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• 2004

The paper describes the design of high-speed, high-resolution Sample-and-Hold circuit which shows the conversion rate 80MHz and the power supply of 3.3v with 0.35um CMOS 2-poly 4-metal process for high-speed, high resolution Analog-to-Digital Converter. For improving Dynamic performance of Sample-and-Hold, Two Double bootstrap switch and high performance operational amplifier with gain booster, which are used. and For physical stability of Sample and Hold circuit, reduces excess voltage of gate in bootstrap switch. Simulation results using HSPICE shows the SFDR of 71dB, 75dB in conversion rate of 80MHz result for two inputs(0.5Vpp, 10MHz and 1Vpp, 10MHz) and the power dissipation of 48mW at single 3.3V supply voltage.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.549-552
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• 2004

The thesis describes the design of 12bit digital-to-analog converter (DAC) which shows the conversion rate of 500MHz and the power supply of 3.3V with 0.35${\mu}m$ CMOS 1-poly 4-metal process for advanced wireless transceiver of high speed and high resolution. The proposed DAC employes segmented structure which consists of 6bit MSB, 3bit mSB, 3bit LSB for area efficiency Also, using a optimized aspect ratio of process and new triple diagonal symmetric centroid sequence for high yield and high linearity. The proposed 12bit current mode DAC was employs new deglitch circuit for the decrement of the glitch energy. Simulation results show the conversion rate of 500MHz, and the power dissipation of 85mW at single 3.3V supply voltage. Both DNL and INL are found to be smaller than ${\pm}0.65LSB/{\pm}0.8LSB$.

• The KIPS Transactions:PartA
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• v.9A no.1
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• pp.93-98
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• 2002

This paper introduces the design of high-speed analog-to-digital converter (ADC) for hard disk drive (HDD) read channel applications. This circuit is bated on fast regenerative autozero comparator for high speed and low-error rate comparison operation, and Double Speed Dual ADC (DSDA) architecture for efficiently increasing the overall conversion speed of ADC. A new type of thermometer-to-binary decoder appropriate for the autozero architecture is employed for no glitch decoding, simplifying the conventional structure significantly. This ADC is designed for 6-bit resolution, 800 Msample/s maximum conversion rate, 390 mW power dissipation, one clock cycle latency in 0.65 m CMOS technology.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.16 no.6
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• pp.454-464
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• 2023

This paper proposes a low-power 8-bit asynchronous SAR ADC with a sampling rate of 1 MS/s for sensor node applications. The ADC uses bootstrapped switches to improve linearity and applies a VCM-based CDAC switching technique to reduce the power consumption and area of the DAC. Conventional synchronous SAR ADCs that operate in synchronization with an external clock suffer from high power consumption due to the use of a clock faster than the sampling rate, which can be overcome by using an asynchronous SAR ADC structure that handles internal comparisons in an asynchronous manner. In addition, the SAR logic is designed using dynamic logic circuits to reduce the large digital power consumption that occurs in low resolution ADC designs. The proposed ADC was simulated in a 180-nm CMOS process, and at a 1.8 V supply voltage and a sampling rate of 1 MS/s, it consumed 46.06 𝜇W of power, achieved an SNDR of 49.76 dB and an ENOB of 7.9738 bits, and obtained a FoM of 183.2 fJ/conv-step. The simulated DNL and INL are +0.186/-0.157 LSB and +0.111/-0.169 LSB.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.6
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• pp.35-41
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• 2000

This paper describes a merged-capacitor switching (MCS) technique to improve the signal Processing speed and resolution of CMOS analog-to-digital converters (ADCs). The proposed MCS technique improves a sampling rate by reducing the number of capacitors used in conventional pipelined ADCs. The ADC capacitor mismatch can be minimized without additional power consumption, die area, and the loss of sampling rate, when the size of each unit capacitor is increased as much as the number of capacitors reduced by the MCS technique. It is verified that the ADC resolution based on the proposed MCS technique is extended further by employing a conventional commutated feedback-capacitor switching (CFCS) technique.

• Journal of the Institute of Electronics and Information Engineers
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• v.49 no.10
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• pp.142-147
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• 2012

This paper presents a mixed-mode CMOS duty-cycle corrector (DCC) circuit that has a dynamic frequency scaling (DFS) counter and coarse and fine tuning adjustments. A higher duty-cycle correction accuracy and smaller jitter have been achieved by utilizing the DFS counter that reduces the bit-switching glitch effect of a digital to analog converter (DAC). The proposed circuit has been designed using a 0.18-${\mu}m$ CMOS process. The measured duty cycle error is less than ${\pm}1.1%$ for a wide input duty-cycle range of 25-75% over a wide freqeuncy range of 0.5-1.5 GHz.

• Journal of Sensor Science and Technology
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• v.30 no.1
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• pp.61-65
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• 2021

In this study, we propose a 2500 frame per second (fps) high-speed binary complementary metal oxide semiconductor (CMOS) image sensor using a gate/body-tied (GBT) p-channel metal oxide semiconductor field effect transistor-type high-speed photodetector. The GBT photodetector generates a photocurrent that is several hundred times larger than that of a conventional N+/P-substrate photodetector. By implementing an additional binary operation for the GBT photodetector with such high-sensitivity characteristics, a high-speed operation of approximately 2500 fps was confirmed through the output image. The circuit for binary operation was designed with a comparator and 1-bit memory. Therefore, the proposed binary CMOS image sensor does not require an additional analog-to-digital converter (ADC). The proposed 2500 fps high-speed operation binary CMOS image sensor was fabricated and measured using standard CMOS process.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38A no.4
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• pp.303-309
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• 2013

A low power 6-bit flash ADC that uses an input voltage range detection algorithm is described. An input voltage level detector circuit has been designed to overcome the disadvantages of the flash ADC which consume most of the dynamic power dissipation due to comparators array. In this work, four digital input voltage range detectors are employed and each input voltage range detector generates the specific clock signal only if the input voltage falls between two adjacent reference voltages applied to the detector. The specific clock signal generated by the detector is applied to turn the corresponding latched comparators on and the rest of the comparators off. This ADC consumes 68.82mW with a single power supply of 1.2V and achieves 4.9 effective number of bits for input frequency up to 1MHz at 500 MS/s. Therefore it results in 4.75pJ/step of Figure of Merit (FoM). The chip is fabricated in 0.13-um CMOS process.