• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.11 s.353
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• pp.48-57
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• 2006

This work describes a 12b 200KHz 0.52mA $0.47mm^2$ algorithmic ADC for sensor applications such as motor controls, 3-phase power controls, and CMOS image sensors simultaneously requiring ultra-low power and small size. The proposed ADC is based on the conventional algorithmic architecture with recycling techniques to optimize sampling rate, resolution, chip area, and power consumption. The input SHA with eight input channels for high integration employs a folded-cascode architecture to achieve a required DC gain and a sufficient phase margin. A signal insensitive 3-D fully symmetrical layout with critical signal lines shielded reduces the capacitor and device mismatch of the MDAC. The improved switched bias power-reduction techniques reduce the power consumption of analog amplifiers. Current and voltage references are integrated on the chip with optional off-chip voltage references for low glitch noise. The employed down-sampling clock signal selects the sampling rate of 200KS/s or 10KS/s with a reduced power depending on applications. The prototype ADC in a 0.18um n-well 1P6M CMOS technology demonstrates the measured DNL and INL within 0.76LSB and 2.47LSB. The ADC shows a maximum SNDR and SFDR of 55dB and 70dB at all sampling frequencies up to 200KS/s, respectively. The active die area is $0.47mm^2$ and the chip consumes 0.94mW at 200KS/s and 0.63mW at 10KS/s at a 1.8V supply.

• Journal of IKEEE
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• v.9 no.2 s.17
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• pp.152-160
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• 2005

A prescaler is an essential building block for PLL-based frequency synthesizers and must satisfy high-speed and low-power characteristics. The design of D-flip flips used in the prescaler implementation is thus critical. Conventional TSPC D-flip flops suffer from glitches, unbalanced propagation delay, and unnecessary charge/discharge at internal nodes in precharge phase, which results in increased power consumption. In this paper a new dynamic D-flip flop is proposed to overcome these problems. Glitches are minimized using discharge suppression scheme, speed is improved by making balanced propagation delay, and low power consumption is achieved by removing unnecessary discharge. The proposed D-flip flop is employed in designing a 128/129 dual-modulus prescaler using $0.18{\mu}m$ CMOS process parameters. The designed prescaler operates up to 5GHz while conventional one can operate up to 4.5GHz under same conditions. It consumes 0.394mW at 4GHz that is a 34% improved result compared with conventional one.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.10
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• pp.758-765
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• 2018

This paper presents a 24-GHz frequency-modulated continuous wave(FMCW) radar transceiver with two Rx and one Tx channels in 65-nm complementary metal-oxide-semiconductor(CMOS) process and implemented it on a radar system using the developed transceiver chip. The transceiver chip includes a $14{\times}$ frequency multiplier, low-noise amplifier, down-conversion mixer, and power amplifier(PA). The transmitter achieves >10 dBm output power from 23.8 to 24.36 GHz and the phase noise is -97.3 GHz/Hz at a 1-MHz offset. The receiver achieves 25.2 dB conversion gain and output $P_{1dB}$ of -31.7 dBm. The transceiver consumes 295 mW of power and occupies an area of $1.63{\times}1.6mm^2$. The radar system is fabricated on a low-loss Duroid printed circuit board(PCB) stacked on the low-cost FR4 PCBs. The chip and antenna are placed on the Duroid PCB with interconnects and bias, gain blocks and FMCW signal-generating circuitry are mounted on the FR4 PCB. The transmit antenna is a $4{\times}4$ patch array with 14.76 dBi gain and receiving antennas are two $4{\times}2$ patch antennas with a gain of 11.77 dBi. The operation of the radar is evaluated and confirmed by detecting the range and azimuthal angle of the corner reflectors.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.458-461
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• 2015

In this paper 2 types of voltage references and a current reference suitable for low-voltage, low-power circuits are proposed and designed with $0.35{\mu}m\;CMOS$ process. MOS transistors operating in weak inversion and bulk-driven technique are utilized to achieve low-voltage and low-power features. The first voltage reference consumes 1.43uA from a supply voltage of 1.2V while it has a reference voltage of 585mV and a TC(Temperature Coefficient) of $6ppm/^{\circ}C$. The second voltage reference consumes 48pW from a supply voltage of 0.3V while having a reference voltage of 172mV and a TC of $26ppm/^{\circ}C$. The current reference consumes 246nA from a supply voltage of 0.75V with a reference current of 32.6nA and a TC of $262ppm/^{\circ}C$. The performances of the designed references have been verified through simulations.

• Journal of Radiation Industry
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• v.6 no.1
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• pp.31-40
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• 2012

There are two methods to fabricate the readout electronic to a large-area CMOS image sensor (LACIS). One is to design and manufacture the sensor part and signal processing electronics in a single chip and the other is to integrate both parts with bump bonding or wire bonding after manufacturing both parts separately. The latter method has an advantage of the high yield because the optimized and specialized fabrication process can be chosen in designing and manufacturing each part. In this paper, LACIS chip, that is optimized design for the latter method of fabrication, is presented. The LACIS chip consists of a 3-TR pixel photodiode array, row driver (or called as a gate driver) circuit, and bonding pads to the external readout ICs. Among 4 types of the photodiode structure available in a standard CMOS process, $N_{photo}/P_{epi}$ type photodiode showed the highest quantum efficiency in the simulation study, though it requires one additional mask to control the doping concentration of $N_{photo}$ layer. The optimized channel widths and lengths of 3 pixel transistors are also determined by simulation. The select transistor is not significantly affected by channel length and width. But source follower transistor is strongly influenced by length and width. In row driver, to reduce signal time delay by high capacitance at output node, three stage inverter drivers are used. And channel width of the inverter driver increases gradually in each step. The sensor has very long metal wire that is about 170 mm. The repeater consisted of inverters is applied proper amount of pixel rows. It can help to reduce the long metal-line delay.

• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.647-650
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• 2005

In this paper, a low voltage SRAM using double boosting scheme is described. A low supply voltage deteriorates the static noise margin (SNM) and the cell read-out current. For read/write operation, a selected word line and cell VDD bias are boosted in a different level using double boosting scheme. This increases not only the static noise margin but also the cell readout current at a low supply voltage. A low voltage SRAM with 32K ${\times}$ 8bit implemented in a 0.18um CMOS technology shows an access time of 26.1ns at 0.8V supply voltage.

• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.632-634
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• 2004

First for high-qualify images and reducing process-error and driving speed, the designed 8-bit data driving circuit consists of a constant transconductance bias circuit, D-F/Fs by shift registers using static transmission gates, 1st latch and 2nd latch by tristate inverters, level shifters, current steering segmented D/A converters by 4MSB thermometer decoder and 4LSB weighted type. Second, we designed gray amp for power saving. These data driving circuits are designed with $0.35-{\mu}m$ CMOS technologies at 3.3 V and 18 V power supplies and simulated with HSPICE.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.28A no.12
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• pp.46-52
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• 1991

A new signal process circuit using two ISFETs as the input devices of the MOS differential amplifier stage for an ISFET biosensor has been developed. One chip integration of the newly developed signal process circuit, ISFETs and a Pt quasi-reference electrode has been carried out according to modified LOCOS p-well CMOS process. The fabricated chip showed gains of 0.8 and 1.6, good liniarity in the input-output relationship and very small power dissipation, 4mW. The chip was applied to realize a urea sensor by forming an immobilized urease membrane, using lift-off technique. on the gate of an ISFET. The urea sensor chip showed stable responses in a wide range of urea concentrations.

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.791-794
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• 1998

This paper presents a constant gm input stagefor low-voltage rail-to-rail operational amplifier. A proposed scheme uses two current paths to keep sum of the biasing currents of the complimentary input pairs. The op amp was designed in a $0.8\mu\textrm{m},$ n-well CMOS, double-polysilicon and double-metal technology. This achieved in weak inversion. The circuit can operate in power supply voltage from 1.5V up to 3V. An open-loop gain, AV, was simulated as 84dB for 15pF load. An unit-gain frequency, fT was 10MHz.

• Journal of the Korean Institute of Telematics and Electronics B
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• v.33B no.3
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• pp.186-192
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• 1996

A modified learning rule is introduced for the implementation of feedforward artificial neural networks with on-chip learning circuitry using standard analog CMOS technology. Learning rule, is modified form the EBP (error back propagation) rule which is one of the well-known learning rules for the feedforward rtificial neural nets(FANNs). The employed MEBP ( modified EBP) rule is well - suited for the hardware implementation of FANNs with on-chip learning rule. As a ynapse circuit, a four-quadrant vector-product linear multiplier is employed, whose input/output signals are given with voltage units. Two $2{\times}2{\times}1$ FANNs are implemented with the learning circuitry. The implemented FANN circuits have been simulatied with learning test patterns using the PSPICE circuit simulator and their results show correct learning functions.