• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2010.05a
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• pp.788-791
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• 2010

We design 64-bit ROM IP for RFID tag chips using printed CMOS non-volatile memory IP design technology for a printed CMOS process. The proposed 64-bit ROM circuit is using ETRI's $0.8{\mu}m$ CMOS porocess, and is expected to reduce process complexity and cost of RFID tag chips compared to that using a conventional silicon fabrication based on a complex lithography process because the poly layer in a gate terminal is using printing technology of imprint process. And a BL precharge circuit and a BL sense amplifier is not required for the designed cell circuit since it is composed of a transmission gate instead of an NMOS transistor of the conventional ROM circuit. Therefore an output datum is only driven by a DOUT buffer circuit. The Operation current and layout area of the designed ROM of 64 bits with an array of 8 rows and 8 columns using $0.8{\mu}m$ ROM process is $9.86{\mu}A$ and $379.6{\times}418.7{\mu}m^2$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.8
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• pp.44-47
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• 2008

In this paper, a new circuit is proposed to minimize the charging and discharging current mismatch in charge pump for UWB PLL application. By adding a common-gate and a common-source amplifier and building the feedback voltage regulator, the high driving charge pump currents are accomplished. The proposed circuit has a wide operation voltage range, which ensures its good performance under the low power supply. The circuit has been implemented in an IBM 0.13um CMOS technology with 1.2V power supply. To evaluate the design effectiveness, some comparisons have been conducted against other circuits in the literature.

• Journal of IKEEE
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• v.8 no.1 s.14
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• pp.12-21
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• 2004

Error control is one of major concerns in many electronic systems. Experience shows that most malfunctions during system operation are caused by transient faults, which often mean abnormal signal delays that may result in violations of circuit element timing constraints. This paper presents a novel CMOS-based concurrent timing error detector that makes a flip-flop to sense and then signal whether its data has been potentially corrupted or not by a setup or hold timing violation. Designed circuit performs a quiescent supply current evaluation to determine timing violation from the input changes in relation to a clock edge. If the input is too close to the clock time, the resulting switching transient current in the detection circuit exceeds a reference threshold at the instant of the clock transition and an error is flagged. The circuit is designed with a $0.25{\mu}m$ standard CMOS technology at a 2.5 V supply voltage. The validity and effectiveness are verified through the HSPICE simulation. The simulation results in this paper shows that designed circuit can be used to detect setup and hold time violations effectively in clocked circuit element.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.504-512
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• 2010

The paper proposes the 6bit 800MS/s flash A/D converter that can be applied to wireless USB chip-set. The paper simplified the error correction circuit and synchronization block as one circuit which are used respectively, and furthermore reduced the burden on the hardware. Comparing to the conventional error correction circuit, the proposed error correction circuit in this paper reduced 5 MOS transistors, the area of each error correction circuit is reduced by 9%. The A/D converter is fabricated with 0.18um CMOS 1-poly 6-metal process, and power dissipation is 182mW at 0.8Vpp input range and 1.8V supply voltage. The measured result shows 4.0bit of ENOB at 800MS/s conversion rate and 128.1MHz input frequency.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.37 no.3
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• pp.44-54
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• 2000

In this paper, a design methodology for the frequency-adaptive negative-delay circuit which can be implemented in standard CMOS memory process is proposed. The proposed negative-delay circuit which is a basic type of the analog SMD (synchronous mirror delay) measures the time difference between the input clock period and the target negative delay by utilizing analog behavior and repeats it in the next coming cycle. A new technology that compensates the auxiliary delay related with the output clock in the measure stage differentiates the Proposed method from the conventional method that compensates it in the delay-model stage which comes before the measure stage. A wider negative-delay range especially prominent in the high frequency performance than that in the conventional method can be realized through the proposed technology. In order to implement the wide locking range, a new frequency detector and the method for optimizing the bias condition of the analog circuit are suggested. An application example to the clocking circuits of a DDR SDRAM is simulated and demonstrated in a 0.6 ${\mu}{\textrm}{m}$ n-well double-poly double-metal CMOS technology.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2016.10a
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• pp.527-530
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• 2016

This paper presents curvature-compensated reference circuits operating under low-voltage condition and achieving low-power consumption with $0.35-{\mu}m$ standard CMOS process. The proposed circuit can operate under less than 1-V supply voltage by using MOS transistors operating in weak-inversion region. The simulation results shows a low temperature coefficient by using the proposed curvature compensation technique. It generates a graph-shape temperature characteristic that looks like a sine curve, not a bell-shape characteristic presented in other published BGRs without curvature compensation. The proposed circuits operate with 0.9-V supply voltage. First, the voltage reference circuit consumes 176nW power and the temperature coefficient is $26.4ppm/^{\circ}C$. The current reference circuit is designed to operate with 194.3nW power consumption and $13.3ppm/^{\circ}C$ temperature coefficient.

• Proceedings of the IEEK Conference
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• 2000.09a
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• pp.911-914
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• 2000

본 논문에서는 배터리가 없는 ASK 전송방식의 RFID(Radio Frequency IDentification) Transponder 칩 설계에 관한 내용을 다룬다. Transponder IC는 power-generation 회로, clock-generation 회로, digital block, modulator, overoltge protection 회로로 구성된다. 설계된 칩은 저전력 회로를 적용하여 원거리 transponder칩을 구현할 수 있도록 하였다. 설계된 회로는 0.25㎛ 표준 CMOS 공정으로 레이아웃하여 제작하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.44-44
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• 2001

본 논문에서는 CMOS로 구현된 3.3V 8-bit 200MSPS의 Folding / Interpolation 구조의 A/D 변환기를 제안한다. 회로에 사용된 구조는 FR(Folding Rate)이 8, NFB(Number of Folding Block)가 4, Interpolation rate 이 8이며, 분산 Track and Hold 구조를 회로를 사용하여 Sampling시 입력주파수를 Hold하여 높은 SNDR을 얻을 수 있었다. 고속동작과 저 전력 기능을 위하여 향상된 래치와 디지털 Encoder를 제안하였고 지연시간 보정을 위한 회로도 제안하였다. 제안된 ADC는 0.35㎛, 2-Poly, 3-Metal, n-well CMOS 공정을 사용하여 제작되었으며, 유효 칩 면적은 1070㎛×650㎛ 이고, 3.3V전압에서 230mW의 전력소모를 나타내었다. 입력 주파수 10MHz, 샘플링 주파수 200MHz에서의 INL과 DNL은 ±1LSB 이내로 측정되었으며, SNDR은 43㏈로 측정되었다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.4
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• pp.50-50
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• 2001

IDDQ 테스트는 CMOS VLSI 회로에서 발생 가능한 여러 종류의 물리적 결함을 효율적으로 검출 할 수 있는 테스트 방식이다. 본 논문에서는 CMOS에서 발생 빈도가 가장 높은 합선고장을 효과적으로 검출할 수 있는 IDDQ 테스트 알고리즘을 이용하여 패턴 생성기를 개발하였다. 고려한 합선고장 모델은 회로의 레이아웃 정보에 의존하지 않으며, 내부노드 혹은 외부노드에 한정시킨 합선고장이 아닌 테스트 대상회로의 모든 노드에서 발생 가능한 단락이다. 구현된 테스트 패턴 생성기는 O(n2)의 복잡도를 갖는 합선고장과 전압 테스트 방식에 비해 상대적으로 느린 IDDQ 테스트를 위해서 새롭게 제안한 이웃 조사 알고리즘과 고장 collapsing 알고리즘을 이용하여, 빠른 고장 시뮬레이션 시간과 높은 고장 검출율을 유지하면서 적은 수의 테스트 패턴 생성이 가능하다. ISCAS 벤치마크 회로의 모의실험을 통하여 기존의 다른 방식보다 우수한 성능을 보였다.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.448-451
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• 2011

SoC에서 칩 내부의 온도를 측정하기 위한 proportional-to-absolute-temperature (PTAT) 회로와 sensing 된 아날로그 신호를 디지털로 변환하기 위해 4-bit analog-to-digital converter (ADC)로 구성된 temperature sensor를 제안한다. CMOS 공정에서 vertical PNP 구조를 이용하여 PTAT 회로가 설계되었다. 온도변화에 둔감한 ADC를 구현하기 위해 아날로그 회로를 최소로 사용하는 successive approximation (SA) ADC가 이용되었다. 4-bit SA ADC는 capacitor DAC와 time-domain 비교기를 이용함으로 전력소모를 최소화하였다. 제안된 temperature sensor는 2.5V $0.25{\mu}m$ 1-poly 9-metal CMOS 공정을 이용하여 설계되었고, $50{\sim}150^{\circ}C$ 온도 범위에서 동작한다. Temperature sensor의 면적과 전력 소모는 각각 $130{\times}390\;um^2$과 868 uW이다.