• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.3
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• pp.211-219
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• 2001

This paper describes a read-only CMOS transponder IC for RFID applications. A full-wave rectifier implemented using NMOS transistors supplies the transponder with a dc supply voltage using the magnetic field generated from a reader. A 64-bit ROM has been designed for a data memory. Front-end impedance modulation and Manchester coding are used for transmitting the data from the transponder memory to the reader. A new damping circuit which has almost constant damping rate under the variations of the distance between the transponder and the reader has been employed for impedance modulation. The designed circuit has been fabricated using a 0.65${\mu}{\textrm}{m}$2-poly, 2-metal CMOS process. Die area is 0.9mm$\times$0.4mm. Measurement results show that it has a constant damping rate of around 20~25% and a data transmission rate of 3.9kbps at a 125KHz RF carrier. The power required for reading operation is about 100㎼. The measured reading distance is around 7cm.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.3
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• pp.397-409
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• 1993

This paper proposed the design methodology of the 8 bit binary parallel adder with carry book-ahead scheme via current-mode CMOS multivalued logic and simulated the proposed adder under $5{\mu}m$ standard IC process technology. The threshold conditions of $G_K$ and $P_K$ which are needed for m-valued parallel adder with CLA are evaluated and adopted for quaternary logic. The design of quaternary CMOS logic circuits, encoder, decoder, mod-4 adder, $G_K$ and $P_K$ detecting circuit and current-voltage converter is proposed and is simulated to prove the operations. These circuits are necessary for binary arithmetic using multivalued logic. By comparing with the conventional binary adder and the CCD-MVL adder, We show that the proposed adder cab be designed one look-ahead carry generator with 1-level structure under standard CMOS technology and confirm the usefulness of the proposed adder.

• Journal of the Korea Society of Computer and Information
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• v.6 no.1
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• pp.7-13
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• 2001

As the density of VLSI increases, the conventional logic testing is not sufficient to completely detect the new faults generated in design and fabrication processing. Recently. IDDQ testing becomes very attractive since it can overcome the limitations of logic testing. This paper presents a new BIC for the internal current test in CMOS logic circuit. Our circuit is composed of Magnetoresistive current sensor, level shifter, comparator, reference voltage circuit and a circuit be IDDQ tested as a kind of self-testing fashion by using the proposed BIC.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.05a
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• pp.771-773
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• 2014

본 논문에서는 장거리 레이더용 차량 충돌 방지 77-GHz CMOS 믹서를 제안한다. 이러한 회로는 2볼트 전원전압에서 동작하며, 저 전압 전원 공급에서도 높은 변환 이득과 낮은 변환 손실 및 낮은 잡음지수를 가지도록 설계되어 있다. 제안한 회로는 TSMC $0.13{\mu}m$ 혼성신호/고주파 CMOS 공정($f_T/f_{MAX}=120/140GHz$)으로 설계하였다. 전체 칩 면적을 줄이기 위해 수동형 인덕터 대신 전송선(Transmission Line) 을 이용하였다. 본 논문에서 설계한 믹서는 약 5.2dB의 우수한 변환이득 특성과 2.1dBm의 우수한 IIP3 특성을 보였다.

• The Journal of the Korea institute of electronic communication sciences
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• v.18 no.2
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• pp.285-290
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• 2023

Compressors are widely used in high-speed electronic systems and are used to reduce the number of operands in multiplier. The proposed compressor is constructed based on the m-GDI(: modified gate diffusion input) to reduce the propagation delay time. This paper is compared the performance of compressors by applying 4-2, 5-2 and 6-2 m-GDI compressors to the multiplier, respectively. As a simulation results, compared to the 8-bit Dadda multiplier using the 4-2 and 6-2 compressor, the multiplier using the 5-2 compressor is reduced propagation delay time 13.99% and 16.26%, respectively. Also, the multiplier using the 5-2 compressor is reduced PDP(: Power Delay Product) 4.99%, 28.95% compared to 4-2 and 6-2 compressor, respectively. However, the multiplier using the 5-2 compression circuit is increased power consumption by 10.46% compared to the multiplier using the 4-2 compression circuit. In conclusion, the 8-bit Dadda multiplier using the 5-2 compressor is superior to the multipliers using the 4-2 and 6-2 compressors. The proposed circuit is implemented using TSMC 65nm CMOS process and its feasibility is verified through SPECTRE simulation.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.4
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• pp.798-804
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• 2003

In this paper, We have designed an advanced circuits for controlling the Ink Nozzle of Printer Head We can fully increase the number of nozzle by reducing the number of Input/Output PADs using the proposed new circuit. The proposed circuit is tested with only 20 nozzles to evaluate functional test using FPGA sample chip. The new circuit architecture can be estimated. Full circuit for controlling 320 nozzles was designed and simulated from ASIC full custom methodology, then the circuit was fabricated by applying 3${\mu}{\textrm}{m}$ CMOS process design rule.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.1
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• pp.62-68
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• 1989

In this paper, Analog/Digital BCDMOS technology that the bipolar devices for driver applications CMOS devices for logic applications, and DMOS devices for high voltage applications is pressented. An optimized poly-gate p-well CMOS process is chosen to fabricate the BCDMOS, and the basic concepts to desigh these devices are to improve the characteristics of bipolar, CMOS & DMOS with simple process technology. As the results, $h_{FE}$ value is 320 (Ib-$10{\mu}A$ for bipolar npn transistor, and there is no short channel effects for CMOS devices which have Leff to $1.25{\mu}m$ and $1.35{\mu}m$ for n-channel and p-channel, respectively. Finally, breakdown voltage is obtained higher than 115V for DMOS device.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.12
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• pp.72-79
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• 2003

This paper proposes a 32${\times}$32 Modified Booth multiplier using CMOS multiple-valued logic circuits. The multiplier based on the radix-4 algorithm is designed with current mode CMOS quaternary logic circuits. Designed multiplier is reduced the transistor count by 67.1% and 37.3%, compared with that of the voltage mode binary multiplier and the previous multiple-valued logic multiplier, respectively. The multiplier is designed with a 0.35${\mu}{\textrm}{m}$ standard CMOS technology at a 3.3V supply voltage and unit current 10$mutextrm{A}$, and verified by HSPICE. The multiplier has 5.9㎱ of propagation delay time and 16.9mW of power dissipation. The performance is comparable to that of the fastest binary multiplier reported.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.17 no.2
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• pp.378-384
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• 2013

In this paper, a CMOS temperature sensor is proposed to measure the internal temperature of a chip. The temperature sensor consists of a proportional-to-absolute-temperature (PTAT) circuit for a temperature sensing part and a 4-bit analog-to-digital converter (ADC) for a digital interface. The PTAT circuit with the compact area is designed by using a vertical PNP architecture in the CMOS process. To reduce sensitivity of temperature variation in the digital interface circuit of the proposed temperature sensor, a 4-bit successive approximation (SA) ADC using the minimum analog circuits is used. It uses a capacitor-based digital-to-analog converter and a time-domain comparator to minimize power consumption. The proposed temperature sensor was fabricated by using a $0.25{\mu}m$ 1-poly 6-metal CMOS process with a 2.5V supply, and its operating temperature range is from 50 to $150^{\circ}C$. The area and power consumption of the fabricated temperature sensor are $130{\times}390{\mu}m^2$ and $868{\mu}W$, respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.1
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• pp.117-122
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• 2016

In this paper, we propose 24-GHz CMOS radio frequency (RF) power amplifier for short-range automotive collision avoidance radars. This circuit contains common source stage with inter-stages conjugate matching circuit as a class-A mode amplifier. The proposed circuit is designed using TSMC $0.13-{\mu}m$ mixed signal/RF CMOS process ($f_T/f_{MAX}=120/140GHz$). It operates at the supply voltage of 2V, and it is designed to have high power gain, low insertion loss and low noise figure in the low supply voltage. To reduce total chip area, the circuit used transmission lines instead of the bulky real inductor. The designed CMOS power amplifier showed the smallest chip size of $0.1mm^2$, the lowest power consumption of 40mW, the highest power gain of 26.5dB, the highest saturated output power of 19.2dBm and the highest maximum power-added efficiency of 17.2% as compared to recently reported results.