• Title/Summary/Keyword: CML Frequency Divider

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CMOS Integrated Multiple-Stage Frequency Divider with Ring Oscillator for Low Power PLL

  • Ann, Sehyuk;Park, Jusang;Hwang, Inwoo;Kim, Namsoo
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.4
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    • pp.185-189
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    • 2017
  • This paper proposes a low power frequency divider for an integrated CMOS phase-locked loop (PLL). An injection-locked frequency divider (ILFD) was designed, along with a current-mode logic (CML) frequency divider in order to obtain a broadband and high-frequency operation. A ring oscillator was designed to operate at 1.2 GHz, and the ILFD was used to divide the frequency of its input signal by two. The structure of the ILFD is similar to that of the ring oscillator in order to ensure the frequency alignment between the oscillator and the ILFD. The CML frequency divider was used as the second stage of the divider. The proposed frequency divider was applied in a conventional PLL design, using a 0.18 ${\mu}m$ CMOS process. Simulation shows that the proposed divide-by-two ILFD and the divide-by-eight CML frequency dividers operated as expected for an input frequency of 1.2 GHz, with a power consumption of 30 mW.

Design of K-Band Frequency Divider Using 130 nm CMOS Process (130 nm CMOS 공정을 이용한 K-Band 주파수 분배기 설계)

  • Nam, Sang-Kyu;Park, Deuk-Hee;Kim, Seong-Kyun;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.20 no.10
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    • pp.1107-1113
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    • 2009
  • In this paper, the design and implementation of K-Band frequency dividers using 130 nm CMOS process are presented. A Miller frequency divider is presented, which realizes a division range from 20 to 25 GHz with 7.2 mW power consumption from 1.2 V supply. The layout size of the core circuit is about $315{\times}246\;um^2$. In addition, a CML frequency divider which divides the output signal of the Miller frequency divider is also presented, which realizes a division range from 8.5 to 13 GHz with 5.7 mW power consumption. The layout size of the CML core is about $91{\times}98\;um^2$. Cascading the Miller and CML frequency dividers, we confirmed the divide-by-4 operation for the input signal from 20 to 25 GHz.

High-speed CMOS Frequency Divider with Inductive Peaking Technique

  • Park, Jung-Woong;Ahn, Se-Hyuk;Jeong, Hye-Im;Kim, Nam-Soo
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.6
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    • pp.309-314
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    • 2014
  • This work proposes an integrated high frequency divider with an inductive peaking technique implemented in a current mode logic (CML) frequency divider. The proposed divider is composed with a master-slave flip-flop, and the master-slave flip-flop acts as a latch and read circuits which have the differential pair and cross-coupled n-MOSFETs. The cascode bias is applied in an inductive peaking circuit as a current source and the cascode bias is used for its high current driving capability and stable frequency response. The proposed divider is designed with $0.18-{\mu}m$ CMOS process, and the simulation used to evaluate the divider is performed with phase-locked loop (PLL) circuit as a feedback circuit. A divide-by-two operation is properly performed at a high frequency of 20 GHz. In the output frequency spectrum of the PLL, a peak frequency of 2 GHz is obtained witha divide-by-eight circuit at an input frequency of 250 MHz. The reference spur is obtained at -64 dBc and the power consumption is 13 mW.

Analysis of Distortion Characteristic of Amplitude Modulated Signal through a Current-Mode-Logic Frequency Divider (전류모드논리 주파수 분할기를 통한 기저대역 AM 변조 신호의 왜곡 특성 연구)

  • Kim, Hyeok;Park, Youngcheol
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.27 no.7
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    • pp.620-624
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    • 2016
  • In this paper we designed a current mode logic frequency divider to transmit a baseband amplitude modulated signal. From simulation result, we studied input and output waveforms according to the variation of input bias voltage. For the purpose of the verification of the study, we designed a current mode logic frequency divider at 1,400 MHz. The designed frequency divider operates between 100 MHz and 3,000 MHz, for -33 dBm input power. The circuit draws $I_{total}=30mA$ from $V_{DD}=3V$ supply, and the simulation result shows that an amplitude modulated signal at 1,400 MHz with the modulation index of 0.5 was successfully downconverted to 700 MHz.

Design of CMOS Fractional-N Frequency Synthesizer for Bluetooth system (Bluetooth용 CMOS Fractional-N 주파수 합성기의 설계)

  • Lee, Sang-Jin;Lee, Ju-Sang;Yu, Sang-Dae
    • Proceedings of the KIEE Conference
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    • 2003.11c
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    • pp.890-893
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    • 2003
  • In this paper, we have designed the fractional-N frequency synthesizer for bluetooth system using 0.35-um CMOS technology and 3.3-V single power supply. The designed synthesizer consist of phase-frequency detector (PFD), charge pump, loop filter, voltage controlled oscillator (VCO), frequency divider, and sigma-delta modulator. A dead zone free PFD is used and a modified charge pump having active cascode transistors is used. A Multi-modulus prescaler having CML D flip-flop is used and VCO having a tuning range from 746 MHz to 2.632 GHz at 3.3 V power supply is used. Total power dissipation is 32 mW and phase noise is -118 dBc/Hz at 1 MHz offset.

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Design of the RF Front-end for L1/L2 Dual-Band GPS Receiver (L1/L2 이중-밴드 GPS 수신기용 RF 전단부 설계)

  • Kim, Hyeon-Deok;Oh, Tae-Soo;Jeon, Jae-Wan;Kim, Seong-Kyun;Kim, Byung-Sung
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.10
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    • pp.1169-1176
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    • 2010
  • The RF front-end for L1/L2 dual-band Global Positioning System(GPS) receiver is presented in this paper. The RF front-end(down-converter) using low IF architecture consists of a wideband low noise amplifier(LNA), a current mode logic(CML) frequency divider and a I/Q down-conversion mixer with a poly-phase filter for image rejection. The current bleeding technique is used in the LNA and mixer to obtain the high gain and solve the head-room problem. The common drain feedback is adopted for low noise amplifier to achieve the wideband input matching without inductors. The fabricated RF front-end using $0.18{\mu}m$ CMOS process shows a gain of 38 dB for L1 and 41 dB for L2 band. The measured IIP3 is -29 dBm in L1 band and -33 dBm in L2 band, The input return loss is less than -10 dB from 50 MHz to 3 GHz. The measured noise figure(NF) is 3.81 dB for L1 band and 3.71 dB for L2 band. The image rejection ratio is 36.5 dB. The chip size of RF front end is $1.2{\times}1.35mm^2$.