• Korean Journal of Fisheries and Aquatic Sciences
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• v.21 no.6
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• pp.331-340
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• 1988

Using the oceanographic data during 196s~ 1983, the seasonal variation of the water type in the Tsushima Current is discussed by analyzing the thermosteric anomaly $(\delta_T)$. By investigating with the index of $33.8\%_{\circ}$ in salinity, it is shown that the low saline water inflowed through the Korea Strait affects the variations of water type in surface layer from summer to fall. On the sea surface, the value of $\delta_T$ is affected mainly by the sea surface temperature (SST). However, in summer, $\delta_T$ is temporarily influenced by the transitional characteristic of the surface salinity. It has the minimum value in winter when the SST is the highest and the sea surface salinity is the lowest. In fall, it decreases as the SST decreases. Specifically, the value of $\delta_T$ is 779 cl/t in August in the region of Korea Strait and 667 cl/t in September in the East Coast of Korea. These values are larger than that of the Kuroshio where is 622 cl/t in August. This phenomenon is due to the inflow of low saline water into these area during summer. In loom depth, the seasonal variation of the $\delta_T$ is not so significant as the surface and is mainly dependent on the annual temperature variation. In general, $\delta_T$ decreases as the Tsushima Current flows to the north.

• Korean Journal of Soil Science and Fertilizer
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• v.31 no.3
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• pp.277-284
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• 1998

The raw food waste of Korea contained markedly high sodium chloride and such high sodium chloride concentration in the soil is a factor limiting plant growth and impairing soil physicochemical properties. This study was carried out to assess the effect of NaCl-containing compost on the growth of lettuce(Lactuca satjva L.) and on the soil chemical properties. For the experiment, six treatments applying 0, 0.5, 1, 3, 6, and 9% NaCl-containing composts at the rate of $20Mg\;ha^{-1}$ were conducted established in a greenhouse. Growth measurements, chemical analysis of lettuce foliage, and soil chemical properties after the harvest were investigated. Lettuce yield in the treatments applied to composts over 3% NaCl was gradually reduced and mortality of lettuce as well as Na concent ration of lettuce foliage progressively increased with successively higher NaCl concentration of composts. With an increase of NaCl concentration of composts, the values of ESP and exchangeable sodium concentration in the surface soil were significantly increased. Especially, ESP of surface soil in the treatment incorporated with 9% NaCl-containing compost after the harvest attained by about 15, suggesting that sodification of surface soil under a greenhouse condition can occur when the compost over 9% NaCl is applied to soil. In conclusion, the application of over 3% NaCl-containing compost at the rates of $20Mg\;ha^{-1}$ can cause undesirable influences in plant growth and also the treatments of over 6% NaCl-containing composts can create conspicuous deteriorations in soil chemical properties in the current year.

• Applied Chemistry for Engineering
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• v.25 no.4
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• pp.396-400
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• 2014

The pore surface of mesoporous materials, SBA-15 and MCM-41 were functionalized with organosilanes, 3-aminopropyltrimethoxysilane (1NS) and N-[(3-trimethoxysilyl)propyl]ethylenediamine (2NS) via grafting method. $(n-BuCp)_2ZrCl_2$ and methylaluminoxane (MAO) were impregnated on the surface-functionalized mesoporous materials for the application to ethylene polymerization. In the case of SBA-15/2NS/$(n-BuCp)_2ZrCl_2$ supported Zr and Al contents decreased as grafted 2NS content increased. However, in the case of MCM-41/2NS/$(n-BuCp)_2ZrCl_2$ supported Al content decreased, but Zr content increased as grafted 2NS content increased. The polymerization activity of SBA-15/2NS/$(n-BuCp)_2ZrCl_2$ increased as the amount of grafted 2NS increased. Increase in the amount of grafted 2NS should caused decrease in pore volume and diameter. Consequently, it decreased the amount of supported metallocene and MAO in general. However, the smaller pore-sized MCM-41 could have lower supported MAO content due to its large molecular size in case that MCM-41 was surface-functionalized with 2NS. Therefore, the supported metallocene content could increase and its polymerization activity was higher than that of SBA-15.

• Korean journal of food and cookery science
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• v.6 no.3 s.12
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• pp.9-15
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• 1990

Peanut prptein isolate was tested for the purpose of finding out the effect of pH, Sodium Chloride concentration and heat treatment on the solubility, surface hydrophobicity, foam expansion and foam stability. The solubility of peanut protein isolate was affected by pH and showed the lowest value at pH 4.5. When the peanut protein isolate was heated, the solubility decreased at pH 3 and pH 7 but at pH 9 solubility increased. At all pH range, solubility decreased as NaCl was added. The surface hydrophobicity of peanut protein isolate showed the highest value at pH 1.5. Generally, at acidic pH range the surface hydrophobicity was high, but at alkaline region, the surface hydrophobicity increased as the temperature increased. And when NaCl was added, the surface hydrophobicity was also increased. Foam expansion of peanut protein isolate was no significant difference among the values about pH. When the peanut protein was heated and NaCl was added, foam expansion was increased at pH 7. Foam stability was significantly low at pH 4.5 and foam stability was increased at acidic pH region below pH 4.5. At pH 7 and pH 9, heat treatment above $60^{\circ}C$ increased foam stability. When NaCl was added, foam stability was significantly increased at pH 3 and pH 7.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$/(C1$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.18 no.2
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• pp.169-177
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• 2020

Here, the stability of stainless steel 316 (SS-316) was investigated to identify its applicability in the oxide reduction process, as a component in related equipment, to produce a complicated gas mixture composed of O₂ and Cl₂ under an argon (Ar) atmosphere. The effects of the mixed gas composition were investigated at flow rates of 30 mL/min O₂, 20 mL/min O₂ + 10 mL/min Cl₂, 10 mL/min O₂ + 20 mL/min Cl₂, and 30 mL/min Cl₂, each at 600℃, during a constant argon flow rate of 170 mL/min. It was found that the corrosion of SS-316 by the chlorine gas was suppressed by the presence of oxygen, while the reaction proceeded linearly with the reaction time regardless of gas composition. Surface observation results revealed an uneven surface with circular pits in the samples that were fed mixed gases. Thermodynamic calculations proposed the combination of Fe and Ni chlorination reactions as an explanation for this pit formation phenomenon. An exponential increase in the corrosion rate was observed with an increase in the reaction temperature in a range of 300 ~ 600℃ under a flow of 30 mL/min Cl₂ + 170 mL/min Ar.

• Electrical & Electronic Materials
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• v.9 no.3
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• pp.291-297
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• 1996

The surface properties of AI(Si, Cu) alloy film after plasma etching using the chemistries of chlorinated and fluorinated gases with varying the etching time have been investigated using X-ray Photoelectron Spectroscopy. Impurities of C, Cl, F and O etc are observed on the etched AI(Si, Cu) films. After 95% etching, aluminum and silicon show metallic states and oxidized (partially chlorinated) states, copper shows Cu metallic states and Cu-Cl$_{x}$(x$_{x}$ (x$_{x}$ (1

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.63-67
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• 2001

Up to now, most studies about Pt-etching have been focused on physical sputtering mechanism with Cl-based plasma, while only a limited results are available for etching characteristics with fluorine-based plasma. In this study, etch characteristics of Pt thin film with $Cl_2$/Ar and $SF_{6}$/Ar Ar gas chemistries have been studied with ECR plasma etching system. It is confirmed that $SF_{6}$/Ar Ar plasma chemistry could make volatile etch-products through the reaction with Pt thin film. Also the improvement in etch rate, etch profile and surface roughness is obtained due to the formation of volatile platinum fluoride compounds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.40-44
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• 2000

In this paper, since the research on the etching of SrBi$_2$Ta$_2$O$_{9}$ (SBT) thin film was few (specially Cl$_2$-base ), we had studied the surface reaction of SBT thin films using the OES in high density plasma etching as a function of rf power, dc bias voltage, and Cl$_2$(Cl$_2$+Ar) gas mixing ratio. It had been found that the etch rate of SBT thin films appeared to be more affected by the physical sputtering between Ar ions and surface of the SBT compared to the chemical reaction in our previous papers$^{1.2}$ . The change of Cl radical density that is measured by the OES as a function of gas combination showed the change of the etch rate of SBT thin films. Therefore, the chemical reactions between Cl radical in plasma and components of the SBT enhance to increase the etch rates of SBT thin films and these results were confirmed by XPS analysis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.7
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• pp.564-568
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• 2003

The etching of Au thin films have been performed in an inductively coupled CF$_4$/Cl$_2$/Ar plasma. The etch rates were measured as CF$_4$ contents added from 0 to 30 % to Cl$_2$/Ar plasma, of which gas mixing ratio was fixed at 20%. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of 150 V, a chamber pressure of 15 mTorr, and a substrate temperature of 3$0^{\circ}C$. The highest etch rate of the Au thin film was 3700 $\AA$m/min at a 10% additive CF$_4$ into Cl$_2$/Ar plasma. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. XPS analysis indicated that Au reacted with Cl and formed Au-Cl, which is hard to remove on the surface because of its high melting point. The etching products could be sputtered by Ar ion bombardment.