• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.436-437
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• 2008

Flexible CIGS thin film solar cell was fabricated using STS430 plate as a flexible substrate in this work. A diffusion barrier layer of $SiO_2$ thin film was deposited on STS430 substrate by PECVD followed by deposition of double layered Mo back contact. After depositing CIGS absorber layer by co-evaporation, CdS buffer layer by chemical bath deposition, ZnO window layer by RF sputtering and Al electrode by thermal evaporation, the solar cell fabrication processes were completed and its performance was evaluated. Corresponding solar cell showed an conversion efficiency of 8.35 % with $V_{OC}$ of 0.52 V, $J_{SC}$ of 26.06 mA/$cm^2$ and FF of 0.61.

• Journal of the Korean Solar Energy Society
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• v.38 no.1
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• pp.37-44
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• 2018

Solar panels are modules made up of many cells, like the N-type monosilicon, P-type monosilicon, P-type multisilicon, amorphous thin-film silicon, and CIGS solar cells. An efficient photovoltaic (PV) power is important to use to determine what kind of cell types are used because residential solar systems receive attention. In this study, we used 3-type solar panels - such as N-type monosilicon, P-type monosilicon, and CIGS solar cells - to investigate what kind of solar panel on a house or building performs the best. PV systems were composed of 3-type solar panels on the roof with each ~1.8 kW nominal power. N-type monosilicon solar panel resulted in the best power generation when monitored. Capacity Utilization Factor (CUF) and Performance Ratio (PR) of the N-type Si solar panel were 14.6% and 75% respectively. In comparison, N-type monosilicon and CIGS solar panels showed higher performance in power generation than P-type monosilicon solar power with increasing solar irradiance.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.61-67
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• 2013

Thin film solar cells have attracted much attention due to their high cell efficiency, comparatively low process cost, and applicability to flexible substrates. In particular, CIGS solar cells have been widely studied and produced because they demonstrated the highest cell efficiency. However, the deposition process of CIGS films generally includes the selenization process conducted at elevated temperature using toxic $H_2Se$ gas. To avoid this selenization process, CIGS thin films were, in this study, deposited by RF sputtering using single composite CIGS target. In addition, the effects of sputtering bias voltage and heat treatment on the microstructural and morphological changes in deposited CIGS films were investigated and discussed.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• Journal of the Korea Convergence Society
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• v.11 no.3
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• pp.163-170
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• 2020

This research was to understand the current situation and trends of urban design using rapidly growing solar cells at home and abroad, and to understand the positive aspects and implications of urban design proposals using CIGS thin film solar cells, a research project to be conducted based on case analysis. The research method was conducted through a literature study and the case was investigated and analyzed after identifying the present situation and trends of urban design using solar cells from home and abroad. As a result, it was confirmed that urban design using solar cells was steadily increasing, and through visual changes such as harmony with the surrounding environment, indoor and outdoor visualization, and the use of color, urban aesthetic beauty creation was positive. Based on these implications, we will present the expected effects of CIGS thin film solar cells being utilized in urban design, and confirm the direction and significance of the urban design proposal using CIGS thin film solar cells in the future.

• 한국신재생에너지학회:학술대회논문집
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• 2008.05a
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• pp.438-440
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• 2008

Effects of Ga contents of CIGS absorber layer on the performance of thin films solar cells were investigated. As Ga content increased, the grain size of CIGS films decreased presumably because Ga diffusion during 2nd stage of co-evaporation process is more difficult than In diffusion. Performances of corresponding solar cell show systematic dependence on Ga content in which open circuit voltage increases and short circuit current and fill factor decrease as Ga contents increases. At a optimal condition of Ga/(In+Ga)=0.27, the solar cell shows a conversion efficiency of 15.6% with $V_{OC}$ of 0.625 V, $J_{SC}$ of 35.03 mA/$cm^2$ and FF of 71.3%.

• Journal of the Optical Society of Korea
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• v.14 no.2
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• pp.142-145
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• 2010

In this work, a numerical analysis of a CIGS ($CuIn_{1-x}Ga_xSe_2$) solar cell with a rectangular grating on the electrode is presented. The effects of the grating on the energy conversion efficiency are calculated using the RCWA (rigorous coupled wave analysis) method. In conventional CIGS solar cells, the thickness of the light absorption layer (CIGS) is $2\;{\mu}m$, at which the incident light is almost absorbed. By adopting a grating on the electrode and using a less than $1\;{\mu}m$ CIGS layer, we obtained a higher efficiency compared to the conventional solar cells.

• Journal of the Korea Convergence Society
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• v.11 no.4
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• pp.157-163
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• 2020

This paper is a product design convergence study to improve the aesthetic quality of CIGS solar cells for utilizing urban living structures, identifying problems of existing solar cell panels and drawing expert aesthetic elements for improving CIGS solar cells through survey and [Group discussion of experts] based on aesthetic elements of product design. Out of the aesthetic elements derived, the top three models of the product design process were 'environmental harmonization', 'pattern balance', and 'period universality' to derive the design and assembly design of the CIGS solar cell module for improving aesthetic quality, and applied to apartments, veranda, windows, and streetcar through product simulation. This study is suitable for applying aesthetic and CIGS solar cell function later to actual urban living structure, and future research direction needs to be studied on various patterns and structural design development of design.

• Journal of the Korean institute of surface engineering
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• v.48 no.1
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• pp.23-26
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• 2015

What causes the transformation of a solar cell is the behavior difference of thermal expansion occurred between the substrate and the layer of semiconductor used in the solar cell. Therefore, the substrate has to possess a behavior of thermal expansion that is similar with that of semiconductor layer. This study employed electroforming to manufacture Fe-Ni alloy materials of different compositions. To verify the result from a finite element analysis, a two-dimensional Mo substrate was calculated and its verification experiment was conducted. The absolute values from the finite element analysis of Mo/substrate structure and its verification experiment showed a difference. However, the size of residual stress of individual substrate compositions had a similar tendency. Two-dimensional CIGS/Mo/$SiO_2$/substrate was modeled. Looking into the residual stress of CIGS layer occurred while the temperature declined from $550^{\circ}C$ to room temperature, the smallest residual stress was found with the use of Fe-52 wt%Ni substrate material.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.432-438
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• 2011

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the $In_2S_3$/CIGS solar cell dramatically improved when the films were annealed at $300^{\circ}C$ in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the $In_2S_3$/CIGS interface. The $In_2S_3$/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the $J_{sc}$ and FF values. Furthermore, the $In_2S_3$/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.