• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.436-437
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• 2008

Flexible CIGS thin film solar cell was fabricated using STS430 plate as a flexible substrate in this work. A diffusion barrier layer of $SiO_2$ thin film was deposited on STS430 substrate by PECVD followed by deposition of double layered Mo back contact. After depositing CIGS absorber layer by co-evaporation, CdS buffer layer by chemical bath deposition, ZnO window layer by RF sputtering and Al electrode by thermal evaporation, the solar cell fabrication processes were completed and its performance was evaluated. Corresponding solar cell showed an conversion efficiency of 8.35 % with $V_{OC}$ of 0.52 V, $J_{SC}$ of 26.06 mA/$cm^2$ and FF of 0.61.

• 한국태양에너지학회 논문집
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• 제38권1호
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• pp.37-44
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• 2018

Solar panels are modules made up of many cells, like the N-type monosilicon, P-type monosilicon, P-type multisilicon, amorphous thin-film silicon, and CIGS solar cells. An efficient photovoltaic (PV) power is important to use to determine what kind of cell types are used because residential solar systems receive attention. In this study, we used 3-type solar panels - such as N-type monosilicon, P-type monosilicon, and CIGS solar cells - to investigate what kind of solar panel on a house or building performs the best. PV systems were composed of 3-type solar panels on the roof with each ~1.8 kW nominal power. N-type monosilicon solar panel resulted in the best power generation when monitored. Capacity Utilization Factor (CUF) and Performance Ratio (PR) of the N-type Si solar panel were 14.6% and 75% respectively. In comparison, N-type monosilicon and CIGS solar panels showed higher performance in power generation than P-type monosilicon solar power with increasing solar irradiance.

• 한국표면공학회지
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• 제46권2호
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• pp.61-67
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• 2013

Thin film solar cells have attracted much attention due to their high cell efficiency, comparatively low process cost, and applicability to flexible substrates. In particular, CIGS solar cells have been widely studied and produced because they demonstrated the highest cell efficiency. However, the deposition process of CIGS films generally includes the selenization process conducted at elevated temperature using toxic $H_2Se$ gas. To avoid this selenization process, CIGS thin films were, in this study, deposited by RF sputtering using single composite CIGS target. In addition, the effects of sputtering bias voltage and heat treatment on the microstructural and morphological changes in deposited CIGS films were investigated and discussed.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 춘계학술대회 논문집
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• pp.138-138
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• 2009

Recently, thin-film solar cells of Cu(In,Ga)$Se_2$(CIGS) have reached a high level of performance, which has resulted in a 19.9%-efficient device. These conventional devices were typically fabricated using chemical bath deposited CdS buffer layer between the CIGS absorber layer and ZnO window layer. However, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. It is why during last decades many efforts have been provided to achieve high efficiency Cd-free CIGS solar cells. In order to alternate CdS buffer layer, ZnS buffer layer is grown by using chemical bath deposition(CBD) technique. The thickness and chemical composition of ZnS buffer layer can be conveniently by varying the CBD processing parameters. The processing parameters were optimized to match band gap of ZnS films to the solar spectrum and exclude the creation of morphology defects. Optimized ZnS buffer layer showed higher optical transmittance than conventional thick-CdS buffer layer at the short wavelength below ~520 nm. Then, chemically deposited ZnS buffer layer was applied to CIGS solar cell as a alternative for the standard CdS/CIGS device configuration. This CIGS solar cells were characterized by current-voltage and quantum efficiency measurement.

• 한국융합학회논문지
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• 제11권3호
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• pp.163-170
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• 2020

본 연구는 최근 급속도로 성장하고 있는 태양전지를 활용한 국내외 도시 디자인의 현황과 동향을 파악하고, 사례 분석을 토대로 향후 진행할 연구과제인 CIGS 박막 태양전지를 활용한 도시 디자인 제안의 긍정적인 측면과 시사점을 파악하고자 하였다. 연구 방법은 문헌연구를 통하여 이론적 고찰을 진행하였고, 이후에 국내외 태양전지를 활용한 도시 디자인의 현황과 동향을 파악하여 사례를 조사·분석하였다. 그 결과 태양전지를 활용한 도시 디자인은 꾸준히 증가하고 있음을 확인하였으며, 주변 환경과의 조화, 실내외 동반 미관창출, 색상의 활용 등의 시각적인 변화를 통하여 심미적 도시 미관창출의 긍정적 효과가 있는 것을 알 수 있었다. 이러한 시사점을 바탕으로 CIGS 박막 태양전지를 도시 디자인에 활용하였을 때 올 수 있는 기대효과를 제시하고, 향후 진행할 CIGS 박막 태양전지를 활용한 도시 디자인 제안에 대한 방향성과 의의를 확인하고자 한다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2008년도 춘계학술대회 논문집
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• pp.438-440
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• 2008

Effects of Ga contents of CIGS absorber layer on the performance of thin films solar cells were investigated. As Ga content increased, the grain size of CIGS films decreased presumably because Ga diffusion during 2nd stage of co-evaporation process is more difficult than In diffusion. Performances of corresponding solar cell show systematic dependence on Ga content in which open circuit voltage increases and short circuit current and fill factor decrease as Ga contents increases. At a optimal condition of Ga/(In+Ga)=0.27, the solar cell shows a conversion efficiency of 15.6% with $V_{OC}$ of 0.625 V, $J_{SC}$ of 35.03 mA/$cm^2$ and FF of 71.3%.

• Journal of the Optical Society of Korea
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• 제14권2호
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• pp.142-145
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• 2010

In this work, a numerical analysis of a CIGS ($CuIn_{1-x}Ga_xSe_2$) solar cell with a rectangular grating on the electrode is presented. The effects of the grating on the energy conversion efficiency are calculated using the RCWA (rigorous coupled wave analysis) method. In conventional CIGS solar cells, the thickness of the light absorption layer (CIGS) is $2\;{\mu}m$, at which the incident light is almost absorbed. By adopting a grating on the electrode and using a less than $1\;{\mu}m$ CIGS layer, we obtained a higher efficiency compared to the conventional solar cells.

• 한국융합학회논문지
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• 제11권4호
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• pp.157-163
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• 2020

본 논문은 도시 생활구조물 활용을 위한 CIGS 태양전지 심미성 향상 제품디자인 개발융합연구로써, 기존 태양전지 패널의 문제점을 파악하고 제품디자인의 심미성 요소를 바탕으로 설문조사와 FGD [전문가 집단 토론]를 통해 CIGS 태양전지 심미성 향상을 위한 전문적인 심미성 요소를 도출하였다. 도출된 심미성 요소 중 '환경 조화성', '패턴 균형성', '시대 보편성' 이렇게 상위 3종을 콘셉트로 제품 디자인 프로세스를 진행하여 심미성 향상을 위한 CIGS 태양전지 모듈 디자인과 어셈블리 디자인을 도출하였으며, 제품 시뮬레이션을 통해 아파트, 베란다와 창호, 스트릿퍼니처에 적용했다. 본 연구는 추후 실제 도시 생활구조물에 활용해 심미성과 CIGS태양전지의 기능을 적용하기에 적합하며, 향후 연구방향은 다양한 패턴과 구조적 디자인개발에 관한 연구가 필요하다.

• 한국표면공학회지
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• 제48권1호
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• pp.23-26
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• 2015

What causes the transformation of a solar cell is the behavior difference of thermal expansion occurred between the substrate and the layer of semiconductor used in the solar cell. Therefore, the substrate has to possess a behavior of thermal expansion that is similar with that of semiconductor layer. This study employed electroforming to manufacture Fe-Ni alloy materials of different compositions. To verify the result from a finite element analysis, a two-dimensional Mo substrate was calculated and its verification experiment was conducted. The absolute values from the finite element analysis of Mo/substrate structure and its verification experiment showed a difference. However, the size of residual stress of individual substrate compositions had a similar tendency. Two-dimensional CIGS/Mo/$SiO_2$/substrate was modeled. Looking into the residual stress of CIGS layer occurred while the temperature declined from $550^{\circ}C$ to room temperature, the smallest residual stress was found with the use of Fe-52 wt%Ni substrate material.

• 한국재료학회지
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• 제21권8호
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• pp.432-438
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• 2011

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the $In_2S_3$/CIGS solar cell dramatically improved when the films were annealed at $300^{\circ}C$ in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the $In_2S_3$/CIGS interface. The $In_2S_3$/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the $J_{sc}$ and FF values. Furthermore, the $In_2S_3$/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.