• Title/Summary/Keyword: C.V.A.

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Electrochemical Characteristics of Li3V2(PO4)3 Negative Electrode as a Function of Crystallinity (결정화도에 따른 Li3V2(PO4)3 음극의 전기화학적 특성)

  • Ku, Jun-Whan;Park, Kyung-Jin;Ryu, Ji-Heon;Oh, Seung-Mo
    • Journal of the Korean Electrochemical Society
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    • v.15 no.1
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    • pp.27-34
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    • 2012
  • $Li_3V_2(PO_4)_3$/carbon composite materials are synthesized from a sucrose-containing precursor. Amorphous $Li_3V_2(PO_4)_3/C$ (a-LVP/C) and crystalline $Li_3V_2(PO_4)_3/C$ (c-LVP/C) are obtained by calcining at $600^{\circ}C$ and $800^{\circ}C$, respectrively, and electrochemical performance as the negative electrode for lithium secondary batteries is compared for two samples. The a-LVP electrode shows much larger reversible capacity than c-LVP, which is ascribed to the spatial $Li^+$ channels and flexible structure of amorphous material. In addition, this electrode shows an excellent rate capability, which can be accounted for by the facilitated $Li^+$ diffusion through the defect sites. The sloping voltage profile is another advantageous feature for easy SOC (state of charge) estimation.

Studies on the Optimal Culture Conditions for Itaconic Acid Production by Aspergilus Terreus (Aspergillus Terreus에 의한 이타콘산 생산을 위한 최적배양조건에 관한 연구)

  • 박승원;김승욱
    • KSBB Journal
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    • v.9 no.4
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    • pp.436-442
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    • 1994
  • The production of itaconic acid by Aspergillus terreus NRRL 1960 was studied. The optimal culture conditional such as pH, inoculum size and medium composition were established. Maximum production of itaconic acid, $19.18g/\ell$, was obtained when the cultivation was carried out at $37^{\circ}C$ and pH 2.5 for 7days, with medium containing 5%(w/v) glucose, 0.5%(w/v) NH4Cl, 0.2%(w/v) yeast extract 0.1%(w/v) CaC12, 0.1%(w/v) MgSO4 and 0.2%(w/v) NaCl. A proper medium for inoculum culture was found to be 2%(w/v) malt extract. The batch production of itaconic acid with free cells in a stirredtank reactor was not efficient compared to the shake-flask culture.

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Study on the Factors that Have Correlation with Improvement of Cerebrovascular Accidents (중풍 환자의 호전도와 연관성이 있는 인자들에 대한 연구 - 제천 세명대 부속 한방병원 입원 환자를 중심으로 -)

  • Cha, Ji-Hye;Lee, Hyung-Kwon;Ko, Heong
    • Journal of Physiology & Pathology in Korean Medicine
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    • v.23 no.4
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    • pp.925-932
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    • 2009
  • The purpose of this study is to evaluate factors that have correlation with improvement of Cerebrovascular accidents(C.V.A) and to decide ranking of influence about improvement of C.V.A. This observation was made on 153 subjects of C.V.A. that were diagnosed through brain MRI or brain CT. They were hospitalized in the Semyung University Oriental Medicine Hospital from the January 1st 2006 to December 31th 2007. The subjects of this study are divided into two groups. The one group has slight motor disturbance, and the other group has severer motor disturbance. Based on medical treatment chart, we analyze differences of many factors like past history, family history, drinking, smoking, several symptoms with C.V.A., etc between two groups. As a result, The past history of cerebrovascular disease and past history of hypertension are the most influencing factors in improvement of C.V.A.

Use of 1.7 kV and 3.3 kV SiC Diodes in Si-IGBT/ SiC Hybrid Technology

  • Sharma, Y.K.;Coulbeck, L.;Mumby-Croft, P.;Wang, Y.;Deviny, I.
    • Journal of the Korean Physical Society
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    • v.73 no.9
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    • pp.1356-1361
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    • 2018
  • Replacing conventional Si diodes with SiC diodes in Si insulated gate bipolar transistor (IGBT) modules is advantageous as it can reduce power losses significantly. Also, the fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present conventional Si diodes cannot do. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. These substrates are built for two voltage ratings, 1.7 kV and 3.3 kV. Comparisons of the 1.7 kV and the 3.3 kV Si-IGBT/Si-diode substrates (Si substrates) at room temperature ($20^{\circ}C$, RT) and high temperature ($H125^{\circ}C$, HT) have shown that the switching losses in hybrid SiC substrates are miniscule as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the current waveforms. Also, the effect of design variations on the electrical performance of 1.7 kV, 50 A diodes is reported here. These variations are made in the active and termination regions of the device.

Structural and C-V characteristics of SrTiO$_3$ /PbTiO$_3$ thin film deposited on Si (Si 기판위에 증착한 SrTiO$_3$ /PbTiG$_3$ 고용체 박막의 구조적 특성 및 C-V 특성)

  • 이현숙;이광배;김윤정;박장우
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.71-74
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    • 2000
  • Pt/Pb$TiO_3$/$SrTiO_3$/p-Si films were prepared by metallo-organic solution deposition(M0SD) method and investigated its structure and ferroelectric properties. Crystallinity of specimen as a funtions of post annealing temperature and the thickness of $SrTiO_3$(STO) buffer layer was studied using XRD and AFM. Based on C-V and P-E curve, $PbTiO_3$(PTO) capacitors showed good ferroelectric hysteresis arising from the polarization switching properties. When the thickness of ST0 buffer layer between PTO and Si substrate was 260 nrn and the post annealing temperature was $650^{\circ}C$, it was showed that production of the pyrochlore phase due to interdiffusion of Si into FTO was prevented. The dielectric constant of FTO thin films calculated from a maximum Cma in the accumulation region was 180 and the dielectric loss was 0.30 at 100 kHz frequency. The memory window in the C-V curve is 1.6V at a gate voltage of 5V.

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A Study on V-C Interoperability Test and Methodology of V-C Interoperation Analysis for Next Generation Maritime Warfighting Experimentation Systems (차세대 해상전투실험체계 구현을 위한 V-C 연동실험 및 연동분석 방법론 연구)

  • Shin, Hyunsoo;Kim, Junghoon;Choi, Bongwan;Yim, Dongsoon
    • Journal of the Korea Institute of Military Science and Technology
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    • v.19 no.1
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    • pp.84-94
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    • 2016
  • The warfighting experimentation is the most important for the weapon acquisition process because the warfighting experimentation shall support the operation effectiveness as well as acquisition logicality. Therefore, ROK Navy is starting to set up the next generation warfighting experimentation systems. According to literature studies, there have been many studies regarding the interoperability of Simulators(Virtual) and Exercising models(Constructive), but not for studies regarding interoperability between Simulators(Virtual) and Analysis models(Constructive) that is the core component of next generation maritime warfighting experimentation systems. This study is dealing with the V-C(Analysis model) interoperability test and methodology of interoperation analysis. The purpose of the study is to provide the new analysis methodology through V-C(Analysis model) interoperation, which can be applied for the concept of operations(CONOPS) of next generation maritime warfighting experimentation systems. In addition to that, the study validates the suggested analysis methodology by the case study of a naval operation.

A Study of Modeling Optimization Scheme for application of Power System Voltage & Compensating Phase Modifying Equipment (계통전압 및 보상용 조상설비 적용 검토시 S.C 모델링 최적화 방안 연구)

  • Yun Ki Seob;Baik Seung Do;Kim Ju Seong
    • Proceedings of the KIEE Conference
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    • summer
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    • pp.192-194
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    • 2004
  • At present, application of PSS/E input data for power flow , stability and fault analysis consist of only 154kV and over data(except 22.9kV data). 22.9kV(5.C) Static Condenser is in operation and installation at 22.9kV Bus of 154kV Substation. however, we assume that 22.9kV 5.C install at 154kV Bus. so, we need to study and search about critical limit for 154kV Bus standard operating Voltage according to 22.9kV 5.C Modeling Site by PSS/E Ver28

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A simulation study on the structural optimization of a 800V 4H-SiC Power DMOSFET (800V급 4H-SiC DMOSFET 전력 소자 구조 최적화 시뮬레이션)

  • Choi, Chang-Yong;Gang, Min-Seok;Bang, Wook;Kim, Sang-Chul;Kim, Nam-Kyun;Koo, Sang-Mo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.04b
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    • pp.35-36
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    • 2009
  • In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to obtain a low threshold voltage ($V_{TH}$) and a high figure of merit ($V_B^2/R_{SP,ON}$). To optimize the device performance, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. These parameters are optimized using 2D numerical simulation and the 4H-SiC DMOSFET structure results in a threshold voltage ($V_{TH}$) below ~3.8V, and high figure of merit ($V_B^2/R_{SP,ON}$>${\sim}200MW/cm^2$) for a power MOSFET in $V_B$-800V range.

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Effects of Coptidis Rhizoma on the Change of Interleukin-6 and $TNF-{\alpha}$ Level induced by LPS I.C.V. Injection in Mice (황연(黃連)이 Lipopolysaccharide 뇌실 주입으로 유발된 생쥐의 IL-6와 $TNF-{\alpha}$ 변화에 미치는 영향)

  • Sim Eun-Yeong;Yun Jeong-Moon;Lee Tae-Hee
    • Herbal Formula Science
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    • v.12 no.1
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    • pp.209-223
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    • 2004
  • Objective: This study was conducted to investigate the effects of Coptidis Rhizoma on the plasma IL-6 and $TNF-{\alpha}$ level in mice by intracerebroventricular(I.C.V.) injection of Lipopolysaccharide (LPS). Method: 6 mice were assigned to each of the Normal group, the Control group, and the individual Experimental groups. In the Normal group only saline was administered intragastrically, and in the Control group LPS was injected intracerebroventricularly 1 hr after intragastric administration of saline. In the Experimental groups Coptidis Rhizoma(0.5g/kg, 1.0g/kg, 3.0g/kg) was administered intragastrically to mice 1 hr prior to LPS (100ng/mouse) I.C.V. Injection. To measure the plasma IL-6 and $TNF-{\alpha}$ level of mice, their blood samples were collected from retro-orbital venous plexus, immediately centrifuged at $4^{\circ}C$, and plasma was removed and stored frozen at $-83^{\circ}C$ for later determination of plasma IL-6 and $TNF-{\alpha}$. Result: 1. LPS I.C.V. Injection increased plasma IL-6 level significantly in a dose-dependent manner compared with Normal group. (P<0.01) The plasma IL-6 concentration reached a significant maximal level about 1 hr after LPS(100ng/mouse) I.C.V. Injection.(P<0.001) 2. Both the 0.5g/kg(Sample A) and 1.0g/kg(Sample B) groups to which Coptidis Rhizoma was administered intragastrically 1 hr prior to LPS(100ng/mouse) I.C.V. Injection showed insignificant lower plama IL-6 level in 1 hr than Control group(P>0.05), and 3.0g/kg group(Sample C) conversely showed higher plama IL-6 level than Control group. 3. LPS I.C.V. Injection increased plasma $TNF-{\alpha}$ level significantly in a dose-dependent manner compared with Normal group.(P<0.05) The plasma $TNF-{\alpha}$ concentration reached a significant maximal level about 1 hr after LPS(100ng/mouse) I.C.V. Injection.(P<0.001) 4. All Sample groups(0.5g/kg, 1.0g/kg, and 3.0g/kg) to which Coptidis Rhizoma was administered intragastrically with each constituent-dose 1 hr prior to LPS(100ng/mouse) I.C.V. Injection showed significant lower $TNF-{\alpha}$ plama level in 1 hr than Control group.(P<0.001) These data revealed that Coptidis Rhizoma might have anti inflammatory effect by reducing the plasma $TNF-{\alpha}$ level in a dose dependent manner in mice LPS I.C.V. Injection.

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Some Characterizations of Catenary Rotation Surfaces

  • Kim, Dong-Soo;Kim, Young Ho;Yoon, Dae Won
    • Kyungpook Mathematical Journal
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    • v.57 no.4
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    • pp.667-676
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    • 2017
  • We study the positive $C^1$ function z = f(x, y) defined on the plane ${\mathbb{R}}^2$. For a rectangular domain $[a,b]{\times}[c,d]{\subset}{\mathbb{R}}^2$, we consider the volume V and the surface area S of the graph of z = f(x, y) over the domain. We also denote by (${\bar{x}}_V,\;{\bar{y}}_V,\;{\bar{z}}_V$) and (${\bar{x}}_S,\;{\bar{y}}_S,\;{\bar{z}}_S$) the geometric centroid of the volume under the graph of z = f(x, y) and the centroid of the graph itself defined on the rectangular domain, respectively. In this paper, first we show that among nonconstant $C^2$ functions with isolated singularities, S = kV, $k{\in}{\mathbb{R}}$ characterizes the family of catenary rotation surfaces f(x, y) = k cosh(r/k), $r={\mid}(x,y){\mid}$. Next, we show that one of $({\bar{x}}_S,\;{\bar{y}}_S)=({\bar{x}}_V,\;{\bar{y}}_V)$, $({\bar{x}}_S,\;{\bar{z}}_S)=({\bar{x}}_V,\;2{\bar{z}}_V)$ and $({\bar{y}}_S,\;{\bar{z}}_S)=({\bar{y}}_V,\;2{\bar{z}}_V)$ characterizes the family of catenary rotation surfaces among nonconstant $C^2$ functions with isolated singularities.